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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD175 BD177 BD179 DESCRIPTION With TO-126 package Complement to type BD176/178 /180 APPLICATIONS For medium power linear and switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings (Ta=25ae ) SYMBOL PARAMETER CONDITIONS BD175 BD177 VCBO Collector-base voltage VCEO INCH ANG BD179 BD175 BD177 BD179 SEM E Open emitter Open base OND IC TOR UC VALUE 45 60 80 45 60 80 UNIT V Collector-emitter voltage V VEBO IC ICM PC Tj Tstg Emitter -base voltage Collector current (DC) Collector current-Peak Collector power dissipation Junction temperature Storage temperature Open collector 5 3 7 V A A W ae ae TC=25ae 30 150 -65~150 Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter saturation voltage Base-emitter on voltage BD175 VCEO(SUS) Collector-emitter sustaining voltage BD177 BD179 BD175 ICBO Collector cut-off current BD177 BD179 VCB=45V; IE=0 VCB=60V; IE=0 VCB=80V; IE=0 VEB=5V; IC=0 IC=150mA ; VCE=2V IC=1A ; VCE=2V IC=0.1A; IB=0 CONDITIONS IC=1A; IB=0.1A IC=1A ; VCE=2V BD175 BD177 BD179 SYMBOL VCEsat VBE MIN TYP. MAX 0.8 1.3 UNIT V V 45 60 80 V 100 |I A IEBO hFE-1 hFE-2 fT Emitter cut-off current DC current gain DC current gain Transition frequency hFE-1 Classifications 6 40-100 10 63-160 HAN INC SEM GE OND IC 40 15 3 TOR UC 1 250 mA IC=250mA; VCE=10V MHz 16 100-250 u classification 16 :only BD175 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BD175 BD177 BD179 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions 3 |
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