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DMG6402LDM
N-CHANNEL ENHANCEMENT MODE MOSFET
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Features
* * * * * * * Low RDS(ON) Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 1) Qualified to AEC-Q101 Standards for High Reliability "Green" Device (Note 2)
Mechanical Data
* * * * * * * *
SOT-26
D D S
NEW PRODUCT
Case: SOT-26 Case Material - Molded Plastic. UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking Information: See Page 2 Ordering Information: See page 2 Weight: 0.008 grams (approximate)
D
D
G
TOP VIEW
TOP VIEW
Internal Schematic
Maximum Ratings
Drain-Source Voltage Gate-Source Voltage
@TA = 25C unless otherwise specified Symbol VDSS VGSS Steady State TA = 25C TA = 70C ID IDM Value 30 20 5.3 4.2 31 Unit V V A A
Characteristic
Continuous Drain Current (Note 3) Pulsed Drain Current (Note 4)
Thermal Characteristics
Characteristic Total Power Dissipation (Note 3) Thermal Resistance, Junction to Ambient TA = 25C (Note 3) Operating and Storage Temperature Range
Notes:
Symbol PD RJA TJ, TSTG
Value 1.12 111 -55 to +150
Unit W C/W C
1. No purposefully added lead. 2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB, with minimum recommended pad layout. 4. Repetitive Rating, pulse width limited by junction temperature.
DMG6402LDM
Document number: DS31839 Rev. 3 - 2
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(c) Diodes Incorporated
DMG6402LDM
Electrical Characteristics
@TA = 25C unless otherwise specified Symbol BVDSS IDSS IGSS VGS(th) RDS (ON) |Yfs| VSD Ciss Coss Crss Rg Qg Qgs Qgd tD(on) tr tD(off) tf Min 30 1.0 Typ 1.5 22 32 10 0.75 404 52 45 1.51 9.2 1.2 1.8 3.41 6.18 13.92 2.84 Max 1.0 100 2.0 27 40 1.0 Unit V A nA V m S V pF pF pF nC nC nC ns ns ns ns Test Condition VGS = 0V, ID = 250A VDS = 30V, VGS = 0V VGS = 20V, VDS = 0V VDS = VGS, ID = 250A VGS = 10V, ID = 7A VGS = 4.5V, ID = 5.6A VDS = 5V, ID = 7A VGS = 0V, IS = 1A
NEW PRODUCT
Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25C Gate-Source Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 6) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time
Notes:
VDS =15V, VGS = 0V, f = 1.0MHz VDS =0V, VGS = 0V, f = 1MHz VGS =10V, VDS = 15V, ID =5.8A
VDD = 15V, VGS = 10V, RL = 2.6, RG = 3
5. Short duration pulse test used to minimize self-heating effect. 6. Guaranteed by design. Not subject to production testing.
30
VGS = 8.0V VGS = 4.5V
20
25 ID, DRAIN CURRENT (A)
16 ID, DRAIN CURRENT (A)
VDS = 5V
20
VGS = 4.0V
12
15
VGS = 3.5V
8
TA = 150C TA = 125C
10
VGS = 3.0V
5
VGS = 2.8V
4
T A = 85C
T A = 25C TA = -55C
0 0
VGS = 2.5V
0
2
0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics
0
0.5 1 1.5 2 2.5 3 3.5 VGS, GATE SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics
4
DMG6402LDM
Document number: DS31839 Rev. 3 - 2
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July 2009
(c) Diodes Incorporated
DMG6402LDM
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0 0 5 10 15 20 25 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 30
VGS = 4.5V VGS = 8.0V
0.08
VGS = 4.5V TA = 150C
0.06
T A = 125C TA = 85C
NEW PRODUCT
0.04
T A = 25C
0.02
TA = -55C
0 0 8 12 16 20 ID, DRAIN CURRENT (A) Fig. 4 Typical Drain-Source On-Resistance vs. Drain Current and Temperature 4
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
1.7 1.5
VGS = 4.5V ID = 5A VGS = 10V ID = 10A
0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0 -50
VGS = 10V ID = 10A VGS = 4.5V ID = 5A
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED)
1.3
1.1
0.9
0.7
0.5 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 5 On-Resistance Variation with Temperature
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 6 On-Resistance Variation with Temperature
2.0 VGS(TH), GATE THRESHOLD VOLTAGE (V)
20 18 IS, SOURCE CURRENT (A)
1.6
ID = 250A
ID = 1mA
16 14 12 10 8 6 4 2
T A = 25C
1.2
0.8
0.4
-25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature
0 -50
0 0.2
0.4 0.6 0.8 1 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current
DMG6402LDM
Document number: DS31839 Rev. 3 - 2
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July 2009
(c) Diodes Incorporated
DMG6402LDM
IDSS, DRAIN-SOURCE LEAKAGE CURRENT (nA)
1,000
10,000
C, CAPACITANCE (pF)
C iss
1,000
TA = 150C
TA = 125C
NEW PRODUCT
100
Coss Crss
100
TA = 85C
10
T A = 25C
f = 1MHz
10
1 0 5 10 15 20 25 30 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Drain-Source Leakage Current vs. Drain-Source Voltage
0
5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Capacitance
30
1 r(t), TRANSIENT THERMAL RESISTANCE
D = 0.7 D = 0.5 D = 0.3
0.1
D = 0.1 D = 0.05 D = 0.9
D = 0.02
RJA(t) = r(t) * RJA RJA = 120C/W P(pk)
0.01
D = 0.01 D = 0.005
t1
D = Single Pulse
t2 T J - T A = P * RJA(t) Duty Cycle, D = t1 /t2
0.001 0.00001
0.0001
0.001
0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 11 Transient Thermal Response
10
100
1,000
Ordering Information
Part Number DMG6402LDM-7
Notes:
(Note 7) Case SOT-26 Packaging 3000/Tape & Reel
7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
34N= Product Type Marking Code YM = Date Code Marking Y = Year (ex: V = 2008) M = Month (ex: 9 = September)
34N
Date Code Key Year Code Month Code
2008 V Jan 1 Feb 2
2009 W Mar 3
2010 X Apr 4 May 5
YM
2011 Y Jun 6
2012 Z Jul 7 Aug 8
2013 A Sep 9
2014 B Oct O Nov N
2015 C Dec D July 2009
(c) Diodes Incorporated
DMG6402LDM
Document number: DS31839 Rev. 3 - 2
4 of 6 www.diodes.com
DMG6402LDM
Package Outline Dimensions
A
NEW PRODUCT
BC
H K M
J
D
L
SOT-26 Dim Min Max Typ A 0.35 0.50 0.38 B 1.50 1.70 1.60 C 2.70 3.00 2.80 D 0.95 H 2.90 3.10 3.00 J 0.013 0.10 0.05 K 1.00 1.30 1.10 L 0.35 0.55 0.40 M 0.10 0.20 0.15 0 8 All Dimensions in mm
Suggested Pad Layout
E
E
Z
G
C
Dimensions Value (in mm) Z 3.20 G 1.60 X 0.55 Y 0.80
C
Y X
E
2.40 0.95
DMG6402LDM
Document number: DS31839 Rev. 3 - 2
5 of 6 www.diodes.com
July 2009
(c) Diodes Incorporated
DMG6402LDM
IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
NEW PRODUCT
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2009, Diodes Incorporated www.diodes.com
DMG6402LDM
Document number: DS31839 Rev. 3 - 2
6 of 6 www.diodes.com
July 2009
(c) Diodes Incorporated

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