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| FDMS86101 N-Channel PowerTrench(R) MOSFET May 2009 FDMS86101 N-Channel PowerTrench(R) MOSFET 100 V, 49 A, 8 m Features Max rDS(on) = 8 m at VGS = 10 V, ID = 13 A at VGS = 6 V, ID = 9.5 A Max rDS(on) = 13.5 m General Description This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced Power Trench(R) process thant has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Advanced Package and Silicon combination for low rDS(on) and high efficiency MSL1 robust package design 100% UIL tested RoHS Compliant Application DC-DC Conversion Top Bottom S Pin 1 S D S G D D D D D D D 5 6 7 8 4 3 2 1 G S S S Power 56 MOSFET Maximum Ratings TA = 25 C unless otherwise noted Symbol VDS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) ID -Continuous (Silicon limited) -Continuous -Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy Power Dissipation Power Dissipation TC = 25 C TA = 25 C (Note 1a) (Note 3) TC = 25 C TC = 25 C TA = 25 C (Note 1a) Ratings 100 20 49 80 12.4 100 135 104 2.5 -55 to +150 mJ W C A Units V V Operating and Storage Junction Temperature Range Thermal Characteristics R R JC JA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 1.2 50 C/W Package Marking and Ordering Information Device Marking FDMS86101 Device FDMS86101 Package Power 56 Reel Size 13 '' Tape Width 12 mm Quantity 3000 units (c)2009 Fairchild Semiconductor Corporation FDMS86101 Rev C1 1 www.fairchildsemi.com FDMS86101 N-Channel PowerTrench(R) MOSFET Electrical Characteristics TJ = 25 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current, Forward ID = 250 A, VGS = 0 V ID = 250 A, referenced to 25 C VDS = 80 V, VGS = 0 V VGS = 20 V, VDS = 0 V 100 66 800 100 V mV/C nA nA On Characteristics VGS(th) VGS(th) TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250 A ID = 250 A, referenced to 25 C VGS = 10 V, ID = 13 A VGS = 6 V, ID = 9.5 A VGS = 10 V, ID = 13 A, TJ = 125 C VDS = 10 V, ID = 13 A 2.0 2.9 -9 6.3 8.4 10.9 45 8 13.5 14 S m 4.0 V mV/C Dynamic Characteristics Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 50 V, VGS = 0 V, f = 1 MHz 2255 460 30 1.0 3000 610 45 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Gate to Source Charge Gate to Drain "Miller" Charge VGS = 0 V to 10 V VGS = 0 V to 5 V VDD = 50 V, ID = 13 A VDD = 50 V, ID = 13 A, VGS = 10 V, RGEN = 6 15 11 27 7 39 22 9.5 10.8 27 20 44 13 55 31 ns ns ns ns nC nC nC nC Drain-Source Diode Characteristics VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 2.1 A VGS = 0 V, IS = 13 A (Note 2) (Note 2) 0.7 0.8 56 61 is guaranteed by design while R 1.2 1.3 90 98 CA is V ns nC determined by IF = 13 A, di/dt = 100 A/ s Notes: 1. R JA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R the user's board design. JC a. 50 C/W when mounted on a 1 in2 pad of 2 oz copper. b. 125 C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0%. 3. Starting TJ = 25 C, L = 0.3 mH, IAS = 30 A, VDD = 75 V, VGS = 10 V (c)2009 Fairchild Semiconductor Corporation FDMS86101 Rev C1 2 www.fairchildsemi.com FDMS86101 N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25 C unless otherwise noted 100 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 6 V 5 VGS = 4.5 V VGS = 5.5 V PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 80 ID, DRAIN CURRENT (A) 4 3 2 1 VGS = 5 V VGS = 5.5 V 60 VGS = 10 V 40 20 VGS = 5 V VGS = 6 V VGS = 4.5 V PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX VGS = 10 V 0 0 1 2 3 4 5 VDS, DRAIN TO SOURCE VOLTAGE (V) 0 0 20 40 60 80 100 ID, DRAIN CURRENT (A) Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 2.0 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 40 SOURCE ON-RESISTANCE (m ) ID = 13 A VGS = 10 V 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -75 ID = 13 A PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 30 rDS(on), DRAIN TO 20 TJ = 125 oC 10 TJ = 25 oC -50 -25 0 25 50 75 100 125 150 0 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE (oC) Figure 3. Normalized On Resistance vs Junction Temperature 100 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX IS, REVERSE DRAIN CURRENT (A) Figure 4. On-Resistance vs Gate to Source Voltage 100 VGS = 0 V 80 ID, DRAIN CURRENT (A) VDS = 5 V 10 TJ = 150 oC 60 TJ = 150 oC 1 TJ = 25 oC 40 TJ = 25 oC 20 TJ = -55 oC 0.1 TJ = -55 oC 0 2 3 4 5 6 VGS, GATE TO SOURCE VOLTAGE (V) 0.01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current (c)2009 Fairchild Semiconductor Corporation FDMS86101 Rev C1 3 www.fairchildsemi.com FDMS86101 N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25 C unless otherwise noted 10 VGS, GATE TO SOURCE VOLTAGE (V) ID = 13 A VDD = 50 V 10000 Ciss VDD = 75 V 8 VDD = 25 V CAPACITANCE (pF) 1000 Coss 6 4 2 100 f = 1 MHz VGS = 0 V Crss 0 0 10 20 Qg, GATE CHARGE (nC) 30 40 10 0.1 1 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 90 ID, DRAIN CURRENT (A) 100 IAS, AVALANCHE CURRENT (A) 75 60 45 Limited by Package TJ = 25 oC 10 TJ = 100 oC VGS = 10 V 30 R JC = 1.2 o TJ = 125 oC C/W VGS = 6 V 15 0 25 1 0.001 0.01 0.1 1 10 100 50 75 100 o 125 150 tAV, TIME IN AVALANCHE (ms) Tc, CASE TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability 200 100 ID, DRAIN CURRENT (A) Figure 10. Maximum Continuous Drain Current vs Case Temperature 2000 1000 P(PK), PEAK TRANSIENT POWER (W) VGS = 10 V SINGLE PULSE R JA = 125 oC/W TA = 25 oC 10 1 ms 100 10 ms 1 THIS AREA IS LIMITED BY rDS(on) 0.1 SINGLE PULSE TJ = MAX RATED R JA = 125 o o 100 ms 1s 10 s DC 10 C/W 0.01 0.01 TA = 25 C 0.1 1 10 100 500 1 0.5 -3 10 10 -2 10 -1 1 10 100 1000 VDS, DRAIN to SOURCE VOLTAGE (V) t, PULSE WIDTH (sec) Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation (c)2009 Fairchild Semiconductor Corporation FDMS86101 Rev C1 4 www.fairchildsemi.com FDMS86101 N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25 C unless otherwise noted 2 1 NORMALIZED THERMAL IMPEDANCE, Z JA DUTY CYCLE-DESCENDING ORDER 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x Z JA x R t1 t2 SINGLE PULSE 0.001 0.0005 -3 10 R JA -2 = 125 C/W o JA + TA 10 10 -1 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve (c)2009 Fairchild Semiconductor Corporation FDMS86101 Rev C1 5 www.fairchildsemi.com FDMS86101 N-Channel PowerTrench(R) MOSFET Dimensional Outline and Pad Layout (c)2009 Fairchild Semiconductor Corporation FDMS86101 Rev C1 6 www.fairchildsemi.com FDMS86101 N-Channel Power Trench(R) MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. Auto-SPMTM PowerTrench(R) F-PFSTM The Power Franchise(R) PowerXSTM Build it NowTM FRFET(R) (R) Global Power ResourceSM Programmable Active DroopTM CorePLUSTM (R) Green FPSTM QFET CorePOWERTM TinyBoostTM QSTM Green FPSTM e-SeriesTM CROSSVOLTTM TinyBuckTM Quiet SeriesTM GmaxTM CTLTM TinyLogic(R) RapidConfigureTM GTOTM Current Transfer LogicTM TINYOPTOTM IntelliMAXTM EcoSPARK(R) TinyPowerTM EfficentMaxTM ISOPLANARTM TM TinyPWMTM EZSWITCHTM * Saving our world, 1mW /W /kW at a timeTM MegaBuckTM TinyWireTM TM* SmartMaxTM MICROCOUPLERTM TriFault DetectTM SMART STARTTM MicroFETTM TRUECURRENTTM* SPM(R) MicroPakTM (R) SerDesTM STEALTHTM MillerDriveTM Fairchild(R) SuperFETTM MotionMaxTM Fairchild Semiconductor(R) SuperSOTTM-3 Motion-SPMTM FACT Quiet SeriesTM SuperSOTTM-6 OPTOLOGIC(R) UHC(R) (R) (R) FACT OPTOPLANAR Ultra FRFETTM SuperSOTTM-8 (R) FAST(R) UniFETTM SupreMOSTM FastvCoreTM VCXTM SyncFETTM FETBenchTM VisualMaxTM Sync-LockTM PDP SPMTM (R) FlashWriter * XSTM (R)* Power-SPMTM FPSTM tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handing and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative / In Design Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I40 Preliminary First Production No Identification Needed Obsolete Full Production Not In Production (c)2009 Fairchild Semiconductor Corporation FDMS86101 Rev.C1 7 www.fairchildsemi.com |
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