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| LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only DUAL DIGIT LED DISPLAY (0.40 Inch) LDD405/6SBKS-XXN/P10 DATA SHEET DOC. NO REV. DATE : : : QW0905- LDD405/6SBKS-XXN/P10 A 01- Nov. - 2005 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LDD405/6SBKS-XXN/P10 Page 1/7 Package Dimensions 20.2 (0.795") 6.9 (0.272") 10.16 (0.40") DIG.1 DIG.2 16.0 (0.630") 12.6 (0.496") 1.3(0.051") LDD405/6SBKS-XXN/P10 LIGITEK O0.51 TYP. 15.80.5 PIN NO.1 2.45X7= 17.15(0.675") Note : 1.All dimension are in millimeters and (lnch) tolerance is 0.25(0.01") unless otherwise noted. 2.Specifications are subject to change without notice. LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LDD405/6SBKS-XXN/P10 Page 2/7 Internal Circuit Diagram LDD405SBKS-XXN/P10 4 DIG.1 ABCDEFG DIG.2 ABCDEFG 5 15 13 1 3 2 14 16 10 12 8 6 7 11 9 LDD406SBKS-XXN/P10 4 DIG.1 ABCDEFG DIG.2 ABCDEFG 5 15 13 1 3 2 14 16 10 12 8 6 7 11 9 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LDD405/6SBKS-XXN/P10 Page 3/7 Electrical Connection PIN NO. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 LDD405SBKS-XXN/P10 Anode C Dig.1 Anode E Dig.1 Anode D Dig.1 Common Cathode Dig.1 Common Cathode Dig.2 Anode D Dig.2 Anode E Dig.2 Anode C Dig.2 Anode G Dig.2 Anode A Dig.2 Anode F Dig.2 Anode B Dig.2 Anode B Dig.1 Anode F Dig.1 Anode A Dig.1 Anode G Dig.1 PIN NO. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 LDD406SBKS-XXN/P10 Cathode C Dig.1 Cathode E Dig.1 Cathode D Dig.1 Common Anode Dig.1 Common Anode Dig.2 Cathode D Dig.2 Cathode E Dig.2 Cathode C Dig.2 Cathode G Dig.2 Cathode A Dig.2 Cathode F Dig.2 Cathode B Dig.2 Cathode B Dig.1 Cathode F Dig.1 Cathode A Dig.1 Cathode G Dig.1 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LDD405/6SBKS-XXN/P10 Page 4/7 Absolute Maximum Ratings at Ta=25 Ratings Parameter Symbol SBKS Forward Current Per Chip Peak Forward Current Per Chip (Duty 1/10,0.1ms Pulse Width) Power Dissipation Per Chip Reverse Current Per Any Chip Electrostatic Discharge( * ) Operating Temperature Storage Temperature IF 30 mA UNIT IFP 100 mA PD Ir ESD Topr Tstg 120 50 500 -25 ~ +85 -25 ~ +85 mW A V Solder Temperature 1/16 Inch Below Seating Plane For 3 Seconds At 260 Static Electricity or power surge will the Use of anti-electrosatic * glove is recommended when handingdamageLED.LED.devices, a conductive wrist band or must be properly these All equipment and machinery grounded. Part Selection And Application Information(Ratings at 25) Electrical Vf(v) Typ. Max. Iv(mcd) Min. Typ. IV-M PART NO common D cathode (nm) (nm) Material Emitted or anode CHIP Common Cathode InGaN/SiC Blue 475 Common Anode 26 LDD405SBKS-XXN/P10 3.5 4.2 7.2 12.8 2:1 LDD406SBKS-XXN/P10 Note : 1.The forward voltage data did not including 0.1V testing tolerance. 2. The luminous intensity data did not including 15% testing tolerance. LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LDD405/6SBKS-XXN/P10 Page 5/7 Test Condition For Each Parameter Parameter Forward Voltage Per Chip Luminous Intensity Per Chip Dominant Wavelength Spectral Line Half-Width Reverse Current Any Chip Luminous Intensity Matching Ratio Symbol Vf Iv Unit volt mcd nm nm Test Condition If=20mA If=10mA If=20mA If=20mA Vr=5V D Ir IV-M A LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LDD405/6SBKS-XXN/P10 Page 6/7 Typical Electro-Optical Characteristics Curve SBK-S CHIP Fig.1 Forward current vs. Forward Voltage 30 25 20 15 10 5 0 1 2 3 4 5 Fig.2 Relative Intensity vs. Forward Current Forward Current(mA) 1.5 Relative Intensity Normalize @20mA 1.25 1.0 0.75 0.5 0.25 0 0 5 10 15 20 25 30 Forward Voltage(V) Forward Current(mA) Fig.3 Forward Current vs. Temperature Fig.4 Relative Intensity vs. Wavelength Forward Current@20mA 30 20 10 0 0 25 50 75 100 Relative Intensity@20mA 40 1.0 0.5 0 380 430 480 530 580 630 680 Ambient Temperature() Wavelength (nm) LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LDD405/6SBKS-XXN/P10 Page 7/7 Reliability Test: Test Item Test Condition 1.Under Room Temperature 2.If=10mA 3.t=1000 hrs (-24hrs, +72hrs) Description This test is conducted for the purpose of detemining the resisance of a part in electrical and themal stressed. Reference Standard MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1 Operating Life Test High Temperature Storage Test 1.Ta=105 5 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under ondition of high temperature for hours. MIL-STD-883:1008 JIS C 7021: B-10 Low Temperature Storage Test 1.Ta=-40 5 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of low temperature for hours. JIS C 7021: B-12 High Temperature High Humidity Test 1.Ta=65 5 2.RH=90 %~95 % 3.t=240hrs 2hrs The purpose of this test is the resistance of the device under tropical for hous. MIL-STD-202:103B JIS C 7021: B-11 Thermal Shock Test 1.Ta=105 5&-405 (10min) (10min) 2.total 10 cycles The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011 Solder Resistance Test 1.T.Sol=260 5 2.Dwell time= 10 1sec. MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1 Solderability Test 1.T.Sol=230 5 2.Dwell time=5 1sec This test intended to see soldering well performed or not. MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2 |
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