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| Semiconductor TBN4227 Series Si NPN Transistor SOT-323 Unit in mm 2.10.1 1.250.05 Applications - VHF and UHF low noise amplifier - Wide band amplifier 2.00.2 1.300.1 1 3 2 0.300.1 0.1 Min. Features - High gain bandwidth product fT = 8 GHz at VCE = 3 V, IC = 7 mA fT = 9 GHz at VCE = 3 V, IC = 20 mA - High power gain - Low noise figure NF = 1.2 dB at VCE = 3 V, IC = 3 mA, f = 1 GHz |S21|2 = 11.4 dB at VCE = 3 V, IC = 7 mA, f = 1 GHz 0.900.1 Pin Configuration 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings (TA = 25 ) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Operating Junction Temperature Storage Temperature Symbol BVCBO BVCEO BVEBO IC Ptot Tj Tstg Ratings 20 8 3 65 150 150 -65 ~ 150 Unit V V V mA mW Caution : Electro Static Discharge sensitive device 0~0.1 0.150.05 1 TBN4227 Series Electrical Characteristics (TA = 25 ) Parameter Collector Cut-off Current Emitter Cut-off Current DC Current Gain Gain Bandwidth Product Insertion Power Gain Noise Figure Reverse Transfer Capacitance Symbol ICBO IEBO hFE fT |S21|2 NF Cre Test Conditions VCB = 15 V, IE = 0 mA VEB = 2 V, IC = 0 mA VCE = 3 V, IC = 7 mA VCE = 3 V, IC = 7 mA VCE = 3 V, IC = 7 mA, f = 1 GHz VCE = 3 V, IC = 3 mA, f = 1 GHz VCB = 3 V, IE = 0 mA, f = 1 MHz Min. 70 5.0 9.0 Typ. 100 8.0 11.4 1.2 0.62 Max. 0.5 0.5 250 2.0 0.9 GHz dB dB pF Unit hFE Classification Marking hFE Value SL2 70 - 140 SL1 125 - 250 Available Package Product TBN4227S TBN4227U TBN4227E TBN4227KF Package SOT-23 SOT-323 SOT-523 SOT-623F Unit in mm Dimension 2.9 1.3, 1.2t 2.0 1.25, 1.0t 1.6 0.8, 0.8t 1.4 0.8, 0.6t 2 TBN4227 Series Typical Characteristics ( TA = 25 , unless otherwise specified) Total Power Dissipation vs. Ambient Temperature Reverse Transfer Capacitance, Cre (pF) 250 Reverse Transfer Capacitance vs. Collector to Base Voltage 1.0 Total Power Dissipation, Ptot (mW) Free Air 200 0.9 0.8 0.7 0.6 0.5 0.4 f = 1 MHz 150 100 50 0 0 25 50 75 100 o 125 150 0 2 4 6 8 10 12 Ambient Temperature, TA ( C) Collector to Base Voltage, VCB (V) DC Current Gain vs. Collector Current 300 VCE = 3 V 25 30 Collector Current vs. Base to Emitter Voltage VCE = 3 V 100 Collector Current, IC (mA) 1 10 50 DC Current Gain, hFE 20 15 10 5 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 50 10 0.5 Collector Current, IC (mA) Base to Emitter Voltage, VBE (V) 3 TBN4227 Series Collector Current vs. Collector to Emitter Voltage 25 14 Gain Bandwidth Product vs. Collector Current VCE = 3 V f = 1 GHz Gain Bandwidth Product, fT (GHz) Collector Current, IC (mA) 12 10 8 6 4 2 0 20 120 A 15 100 A 80 A 10 60 A 40 A 5 IB = 20 A 0 0 1 2 3 4 5 1 10 50 Collector to Emitter Voltage, VCE (V) Collector Current, IC (mA) Insertion Power Gain vs. Frequency 30 25 20 15 10 5 0 0.1 Insertion Power Gain vs. Collector Current 16 Insertion Power Gian, |S21| (dB) Insertion Power Gain, |S21| (dB) VCE = 3 V IC = 7 mA 14 12 10 8 6 4 2 0 1 VCE = 3 V f = 1 GHz 2 1 10 2 10 50 Frequency (GHz) Collector Current, IC (mA) 4 TBN4227 Series Maximum Available Gain vs. Collector Current 20 5 VCE = 3 V f = 1GHz VCE = 3 V f = 1 GHz Noise Figure vs. Collector Current Maximum Available Gain, MAG (dB) 18 16 4 Noise Figure, NF (dB) 14 12 10 8 6 4 2 0 1 10 50 3 2 1 0 0.5 1 10 50 Collector Current, IC (mA) Collector Current, IC (mA) Noise Parameter vs. Frequency (at VCE = 3 V, IC = 3 mA) Frequency (GHz) 0.9 1 1.5 1.8 Fmin (dB) 1.193 1.147 1.302 1.636 rn 0.383 0.376 0.327 0.313 opt Mag 0.5427 0.5287 0.4514 0.353 Phase 37.04 40.24 56.36 67.11 Association gain (dB) 10.477 9.799 7.374 6.607 Gmax (dB) 13.809 13.274 9.887 8.27 5 TBN4227 Series Dimensions of TBN4227S in mm SOT-23 Dimensions of TBN4227E in mm SOT-523 Dimensions of TBN4227KF in mm SOT-623F 1.2 0.8 Pin Configuration (SOT-23, SOT-523, SOT-623F) Pin No. 1 2 Symbol B E C Description Base Emitter Collector 1 1.4 0.9 3 3 0.2 0.11 2 0.6 0~0.1 6 |
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