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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1157 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= 50V(Min) *High DC Current Gain: hFE= 250V(Min.) @IC= 0.5A *Low Collector Saturation Voltage *High Reliability APPLICATIONS *Switching regulators *DC-DC converter *Solid sate relay *General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage w ww scs .i VALUE 80 50 10 4 1 25 150 -55~150 UNIT V .cn mi e V V A A W Collector Current-Continuous Base Current-Continuous Collector Power Dissipation @ TC=25 Junction Temperature Storage Temperature Range PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 5.0 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD1157 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 50 V VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 1A; IB= 0 B 50 V V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0 80 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 0.1mA; IC= 0 10 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 50mA B VB E(sat) Base-Emitter Saturation Voltage ICBO Collector Cutoff Current IEBO Emitter Cutoff Current hFE DC Current Gain Switching times w w w. sem isc IC= 1A; IB= 50mA B VCB= 80V; IE= 0 .cn i 250 0.5 V 1.5 V 100 A VEB= 10V; IC= 0 100 A IC= 0.5A; VCE= 5V ton Turn-on Time IC= 2A, IB1= -IB2= 0.2A; RL= 5; PW= 20s; Duty2% 0.5 s tstg Storage Time 3.0 s tf Fall Time 0.8 s isc Websitewww.iscsemi.cn 2 |
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