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APTM120A80FT1G
Phase leg MOSFET Power Module
5 Q1 7 8 Q2 9 10 1 2 12 3 4 NTC 6 11
VDSS = 1200V RDSon = 800m typ @ Tj = 25C ID = 14A @ Tc = 25C
Application * * * * Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control
Features * Power MOS 8TM Fast FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged Very low stray inductance - Symmetrical design Internal thermistor for temperature monitoring High level of integration
* * * Benefits * * * * * *
Pins 1/2 ; 3/4 ; 5/6 must be shorted together
Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS Compliant
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Tc = 25C Tc = 80C Max ratings 1200 14 10 90 30 960 357 12 Unit V A V m W A
December, 2007 1-5 APTM120A80FT1G - Rev 0
Tc = 25C
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTM120A80FT1G
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions Tj = 25C VDS = 1200V VGS = 0V Tj = 125C VGS = 10V, ID = 12A VGS = VDS, ID = 2.5mA VGS = 30 V Min Typ Max 250 1000 960 5 100 Unit A m V nA
3
800 4
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 600V ID = 12A Resistive switching @ 25C VGS = 15V VBus = 800V ID = 12A RG = 2.2 Min Typ 6696 615 80 260 42 120 45 27 145 42 ns nC Max Unit pF
Source - Drain diode ratings and characteristics
Symbol Characteristic IS Continuous Source current (Body diode) VSD Diode Forward Voltage dv/dt Peak Diode Recovery trr Qrr Reverse Recovery Time Reverse Recovery Charge Test Conditions Tc = 25C Tc = 80C VGS = 0V, IS = - 12A Tj = 25C Tj = 125C Tj = 25C Tj = 125C Min Typ Max 14 10 1.1 25 270 640 Unit A V V/ns ns C
IS = - 12A VR = 100V diS/dt = 100A/s
1.3 3.5
dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS - 12A di/dt 1000A/s VDD 800V Tj 125C
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APTM120A80FT1G - Rev 0
December, 2007
APTM120A80FT1G
Thermal and package characteristics
Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Min 2500 -40 -40 -40 2.5
Typ
Max 0.35 150 125 100 4.7 80
Unit C/W V C N.m g
Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight
To heatsink
M4
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic Resistance @ 25C R25 B 25/85 T25 = 298.15 K
RT = R25 T: Thermistor temperature 1 1 RT: Thermistor value at T exp B25 / 85 T - T 25
Min
Typ 50 3952
Max
Unit k K
SP1 Package outline (dimensions in mm)
See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com
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APTM120A80FT1G - Rev 0
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APTM120A80FT1G
Typical Performance Curve
Low Voltage Output Characteristics 30 ID, Drain Current (A) ID, Drain Current (A) 25 20 15 10
TJ=125C VGS=10V TJ=25C
Low Voltage Output Characteristics 20
TJ=125C
15
VGS=6, 7, 8 &9V 5V
10
5
5 0 0 5 10 15 20
4.5V
0 0 5 10 15 20 25 30
VDS, Drain to Source Voltage (V) RDSon, Drain to Source ON resistance Normalized RDS(on) vs. Temperature
VDS, Drain to Source Voltage (V) Transfert Characteristics 20 ID, Drain Current (A)
VDS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle
3 2.5 2 1.5 1 0.5 0 25
VGS=10V ID=12A
15
TJ=125C
10
TJ=25C
5
0
50
75
100
125
150
0
1
2
3
4
5
6
TJ, Junction Temperature (C) Gate Charge vs Gate to Source 12 VGS, Gate to Source Voltage 10 8 6 4 2 0 0 40 80 120 160 200 240 280 Gate Charge (nC)
VDS=960V ID=12A TJ=25C VDS=240V VDS=600V
VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 10000
Ciss
C, Capacitance (pF)
1000
Coss
100
Crss
0
50
100
150
200
VDS, Drain to Source Voltage (V)
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4-5
APTM120A80FT1G - Rev 0
December, 2007
10
APTM120A80FT1G
Drain Current vs Source to Drain Voltage ISD, Reverse Drain Current (A) 50 40
TJ=125C
30 20 10 0 0 0.2 0.4 0.6 0.8 1 1.2 VSD, Source to Drain Voltage (V) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.4
TJ=25C
Thermal Impedance (C/W)
0.9
0.3
0.7
0.2
0.5 0.3
0.1
0.1 0.05 Single Pulse
0 0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
www.microsemi.com
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APTM120A80FT1G - Rev 0
December, 2007

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