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| CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT PNP Muti-Chip General Purpose Amplifier VOLTAGE 65 Volts APPLICATION * AF input stages and driver applicationon equipment. * Other general purpose applications. CHT856BWPT CURRENT 0.1 Ampere FEATURE * Surface mount package. (SC-70/SOT-323) * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capability. (2) (3) SC-70/SOT-323 1.30.1 0.30.1 0.65 2.00.2 0.65 (1) MARKING * HFE(Q):RQ * HFE(R):RR * HFE(S):RS 1.250.1 0.05~0.2 0.1Min. 0.8~1.1 0~0.1 2.0~2.45 CIRCUIT 1 3 2 Dimensions in millimeters SC-70/SOT-323 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL V CBO V CEO VEBO IC PC Tstg Tj Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) CONDITIONS open emitter open base open collector -80 -65 -5 -0.1 UNIT V V V A mW C C 2004-10 Collector power dissipation storage temperature junction temperature 200 -55~+150 +150 RATING CHARACTERISTIC ( CHT856BWPT) THERMAL CHARACTERISTICS CHARACTERISTICS Tamb = 25 C unless otherwise specied. SYMBOL ICBO BVCBO BVCEO BVEBO hFE VCEsat VBEsat Cib Cob fT Note 1. Pulse test: t p 300 s; 0.02. 2. hFE: Classification Q: 125 to 250, R: 220 to 475, S: 420 to 800 CONDITIONS IE = 0; VCB = -30 V collector cut-off current IC = 0; VCB = -30 V; TA = 150 O C collector-base breakdown voltage IC =-10uA collector-emitter breakdown voltage IC =-10mA IE =-1uA emitter-base breakdown voltage VCE /I C =-5V/-2 mA current transfer ratio DC IC = -10 mA ; IB = -0.5 mA collector-emitter saturation IC = -100 mA ; I B = -5 mA voltage base-emitter satur ation voltage emitter input capacitance collector output capacitance transition frequency IC = -10mA;IB = -0.5 mA IC = 0; VCB =- 0.5V f = 1 MH z ; IE = 0; VCB = -10V ; f = 1 MH z IE = -20 mA; VCE = 5 V ; f = 100 MHz PARAMETER MIN. - - -80 -65 -5 -125 - - - - - - Typ. - - - - - - - - -700 8 3 200 UNIT MAX. -15 nA -5 uA V - V - - V -800 -300 mV -650 - - - - mV mV pF pF MHz RATING CHARACTERISTIC CURVES ( CHT856BWPT) Typical Pulsed Current Gain vs Collector Current 500 V CE = 5V VCESAT - COLLECTOR EMITTE R VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN Collector-Emitter Saturation Voltage vs Collector Current 0. 3 0.25 0. 2 0.15 400 125 C = 10 300 25 C 200 25 C 0. 1 0.05 0 0.1 1 10 10 0 300 100 - 40 C 125 C - 40 C 0 0.01 0 .1 1 10 100 I C - COLLECTOR CURRENT (mA) I C - COLLECTOR CURRE NT (mA) RATING CHARACTERISTIC CURVES ( CHT856BWPT) V BEON - BAS E EMITTER ON VOLTAGE (V) V BESAT - BASE EM ITTE R VOLTAGE (V) Base-Emitter Saturation Voltage vs Collector Current 1.2 1 0.8 0.6 0.4 0.2 0 0.1 Base Emitter ON Voltage vs Collector Current 1 = 10 0.8 - 40 C 25 C 125 C - 40 C 25 C 0.6 125 C 0.4 0.2 V CE = 5V 1 10 10 0 300 0 0.1 1 10 100 200 I C - COLLECTOR CURRE NT (mA) I C - COLLECTOR CURRE NT (mA) Collector-Cutoff Current vs Ambient Temperature I CBO - COLLE CTOR CURRENT (nA) V CB = 50V 10 BVCER - BREAKDOWN VOLTAGE (V) 10 0 Collector-Emitter Breakdown Voltage with Resistance Between Emitter-Base 95 90 1 85 80 0. 1 75 0.01 25 50 75 10 0 125 70 0.1 1 10 100 1000 T A - AMBIE NT TEMP ERATURE ( C) RESISTANCE (k ) V CE - COLLECTOR-EMITTER VOLTAGE (V) Collector Saturation Region 4 Input and Output Capacitance vs Reverse Voltage 100 Ta = 25 C 3 f = 1.0 MHz 2 Ic = 100 uA 50 mA 300 mA CAPACITANCE (pF) 10 Cib Cob 1 0 100 300 700 2000 4000 0.1 1 10 100 I B - BASE CURRENT (uA) V CE - COLLECTOR VOLTAGE (V) RATING CHARACTERISTIC CURVES ( CHT856BWPT) f T - GAIN BANDWIDTH PRODUCT (MHz) Gain Bandwidth Product vs Collector Current 300 Switching Times vs Collector Current 270 240 210 40 Vce = 5V ts 30 TIME (nS) 180 150 120 90 60 30 20 IB1 = IB2 = Ic / 10 V cc = 10 V 10 tf tr td 10 20 30 50 100 200 300 0 1 10 20 50 100 150 0 I C - COLLECTOR CURRENT (mA) I C - COLLECTOR CURRENT (mA) |
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