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| LED - Chip 25.02.2008 Radiation Red Type Point Source Technology AlInGaP/GaAs ELC-630-29-12 rev. 07 Electrodes N (cathode) up 360 330 20 typ. dimensions (m) O 27 +4 -2 typ. thickness 170 (20) m cathode 20 260 220 gold alloy, 1.5 m anode gold alloy, 0.5 m 130 130 PS-13 Maximum Ratings Tamb = 25 unless otherwise specified C, Test Parameter conditions Forward current (DC) Symbol IF Min Typ Max 15 Unit mA Optical and Electrical Characteristics Tamb = 25 unless otherwise specified C, Test Parameter conditions Forward voltage Reverse voltage Radiant power* Luminous intensity* Peak wavelength Spectral bandwidth at 50% Switching time IF = 5 mA IR = 10 A IF = 5 mA IF = 5 mA IF = 5 mA IF = 5 mA IF = 5 mA Symbol VF VR e IV P 0.5 tr , tf 5 30 1.2 620 40 1.6 630 25 40/30 635 Min Typ 2.3 Max 2.6 Unit V V W mcd nm nm ns *Measured on bare chip on TO-18 header with EPIGAP equipment Labeling Type ELC-630-29-12 Lot N IV(typ) [mcd] VF(typ) [V] Quantity Packing: Chips on adhesive film with wire-bond side on top We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications.All operating parameters must be validated for each customer application by the customer. EPIGAP Optoelektronik GmbH, D-12555 Berlin, Kopenicker Str.325 b, Haus 201 1 of 1 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 |
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