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| LED - Chip Preliminary Radiation Red Type Point Source 10.04.2007 Technology AlInGaP/GaAs ELC-650-29-10 rev. 04/07 Electrodes N (cathode) up 360 330 O 25 20 typ. dimensions (m) typ. thickness 250 m 220 260 cathode gold alloy, 1.5 m anode gold alloy, 0.5 m 20 130 115 PS-01 Maximum Ratings Tamb = 25C, unless otherwise specified Test Parameter conditions Forward current (DC) Symbol Min Typ Max Unit IF 15 mA Optical and Electrical Characteristics Tamb = 25C, unless otherwise specified Test Parameter conditions Forward voltage Reverse voltage Radiant power* Luminous intensity* Peak wavelength Spectral bandwidth at 50% Switching time IF = 5 mA IR = 10 A IF = 5 mA IF = 5 mA IF = 5 mA IF = 5 mA IF = 5 mA Symbol Min Typ Max Unit VF VR e IV p 0.5 tr, tf 640 5 15 2.3 2.6 V V 17 3.0 650 20 40/30 660 W mcd nm nm ns *measured on bare chip on TO-18 header with EPIGAP equipment Labeling Type ELC-650-29-10 Lot N IV(typ) [mcd] VF(typ) [V] Quantity Packing: Chips on adhesive film with wire-bond side on top EPIGAP Optoelektronik GmbH, D-12555 Berlin, Kopenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 1 |
Price & Availability of ELC-650-29-10
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