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A Product Line of Diodes Incorporated
ZXMN6A08K
60V N-CHANNEL ENHANCEMENT MODE MOSFET
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Product Summary
V(BR)DSS RDS(on) 80m @ VGS= 10V 60V 150m @ VGS= 4.5V 5.75A ID TA = 25C 7.90A
Features and Benefits
* * *
Low on-resistance Fast switching speed "Green" component and RoHS compliant (Note 1)
Mechanical Data
* Case: TO-252 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 (Note 1) Moisture Sensitivity: Level 1 per J-STD-020D Terminals Connections: See Diagram Terminals: Matte Tin Finish annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.33 grams (approximate)
Description and Applications
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
* * *
* * * * *
Backlighting DC-DC Converters Power management functions
D
D
G
D G
TOP VIEW
S
S
Equivalent Circuit
PIN OUT -TOP VIEW
Ordering Information
Product ZXMN6A08KTC
Note:
(Note 1) Marking See Below Reel size (inches) 13 Tape width (mm) 16 Quantity per reel 2,500
1. Diodes, Inc. defines "Green" products as those which are Eu RoHS compliant and contain no halogens or antimony compounds; further information about Diodes Inc.'s "Green" Policy can be found on our website. For packaging details, go to our website.
Marking Information
ZXMN 6A08
YYWW
ZXMN = Product Type Marking Code, Line 1 6A08 = Product Type Marking Code, Line 2 YYWW = Date Code Marking YY = Year (ex: 09 = 2009) WW = Week (01-52)
ZXMN6A08K
Document Revision: 2
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July 2009
(c) Diodes Incorporated
A Product Line of Diodes Incorporated
ZXMN6A08K Maximum Ratings
Drain-Source voltage Gate-Source voltage Continuous Drain current VGS = 10V (Note 3) TA=70C (Note 3) (Note 2) (Note 4) (Note 3) (Note 4) @TA = 25C unless otherwise specified Symbol VDSS VGS ID IDM IS ISM Value 60 20 7.90 6.30 5.36 24.3 9.0 24.3 Unit V V A A A A
Characteristic
Pulsed Drain current VGS= 10V Continuous Source current (Body diode) Pulsed Source current (Body diode)
Thermal Characteristics @TA = 25C unless otherwise specified
Characteristic (Note 2) Power dissipation Linear derating factor (Note 3) (Note 5) Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead Operating and storage temperature range
Notes:
Symbol
PD
(Note 2) (Note 3) (Note 5) (Note 6)
RJA RJL TJ, TSTG
Value 4.13 33.0 8.94 71.5 2.12 16.9 30.3 14.0 59.1 2.77 -55 to 150
Unit
W mW/C
C/W C
2. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 3. Same as note 2, except the device is measured at t 10 sec. 4. Same as note 2, except the device is pulsed with D = 0.02 and pulse width 300 s. The pulse current is limited by the maximum junction temperature. 5. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 6. Thermal resistance from junction to solder-point (at the end of the drain lead).
ZXMN6A08K
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ZXMN6A08K Thermal Characteristics
ID Drain Current (A)
1
DC 1s 100ms 10ms T amb=25C 25mm x 25mm 1oz FR4 1ms 100s
ID Drain Current (A)
10 Limit
RDS(on)
RDS(on)
10 Limit
1
DC 1s 100ms 10ms T amb=25C 50mm x 50mm 2oz FR4 1ms 100s
100m
100m
10m
10m
1
10
1
10
VDS Drain-Source Voltage (V)
Safe Operating Area
T amb=25C
Safe Operating Area
35
VDS Drain-Source Voltage (V)
60
Thermal Resistance (C/W)
Thermal Resistance (C/W)
50 40
25mm x 25mm 1oz FR4 D=0.5
30 25 20 15 10 5 0 100
Tamb=25C 50mm x 50mm 2oz FR4 D=0.5
30 20 10 0 100 1m 10m 100m 1
D=0.2 D=0.1 D=0.05 Single Pulse
D=0.2
D=0.1 D=0.05 Single Pulse
10
100
1k
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Transient Thermal Impedance
4.5
Max Power Dissipation (W)
Max Power Dissipation (W)
100
Single Pulse T amb=25C 50mm x 50mm 2oz FR4
4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 20 40 60 80 100 120 140 160
50mm x 50mm 2oz FR4 25mm x 25mm 1oz FR4
10
25mm x 25mm 1oz FR4
1 100
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Temperature (C)
Pulse Power Dissipation
Derating Curve
ZXMN6A08K
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ZXMN6A08K Electrical Characteristics @TA = 25C unless otherwise specified
Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-Resistance (Note 7) Forward Transconductance (Notes 7 & 8) Diode Forward Voltage (Note 7) Reverse recovery time (Note 8) Reverse recovery charge (Note 8) DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time (Note 9) Turn-On Rise Time (Note 9) Turn-Off Delay Time (Note 9) Turn-Off Fall Time (Note 9)
Notes:
Symbol BVDSS IDSS IGSS VGS(th) RDS (ON) gfs VSD trr Qrr Ciss Coss Crss Qg Qg Qgs Qgd tD(on) tr tD(off) tf
Min 60 1.0
Typ 6.6 0.88 19.2 30.3 459 44.2 24.1 3.8 5.8 1.4 1.9 2.6 2.1 12.3 4.6
Max 0.5 100 3.0 0.080 0.150 0.95
Unit V A nA V S V ns nC pF pF pF nC nC nC nC ns ns ns ns
Test Condition ID = 250A, VGS= 0V VDS= 60V, VGS= 0V VGS= 20V, VDS= 0V ID= 250A, VDS= VGS VGS= 10V, ID= 4.8A VGS= 4.5V, ID= 4.2A VDS= 15V, ID= 4.8A IS= 4.0A, VGS= 0V IS= 1.4A, di/dt= 100A/s
VDS= 40V, VGS= 0V f= 1MHz VGS= 4.5V VGS= 10V VDS= 30V ID= 1.4A
VDD= 30V, VGS= 10V ID= 1.5A, RG 6.0
7. Measured under pulsed conditions. Pulse width 300s; duty cycle 2% 8. For design aid only, not subject to production testing. 9. Switching characteristics are independent of operating junction temperatures.
ZXMN6A08K
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ZXMN6A08K Typical Characteristics
10
T = 25C
10V
5V 4.5V 4V 3.5V
10
T = 150C
10V
5V 4V 3.5V
ID Drain Current (A)
ID Drain Current (A)
1
3V 2.5V
1
0.1
3V
VGS 2V
0.1 0.1 1 10
VGS
0.01 0.1 1 10
VDS Drain-Source Voltage (V)
Output Characteristics
VDS Drain-Source Voltage (V)
Output Characteristics
Normalised RDS(on) and VGS(th)
10
T = 150C
1
T = 25C
0.1
VDS = 10V
0.01 2
VGS Gate-Source Voltage (V)
3
4
5
2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50
VGS = 10V ID = 4.8A RDS(on)
ID Drain Current (A)
VGS(th) VGS = VDS ID = 250uA
0
50
100
150
Tj Junction Temperature (C)
Typical Transfer Characteristics
RDS(on) Drain-Source On-Resistance ()
Normalised Curves v Temperature
ISD Reverse Drain Current (A)
3V
3.5V
4V
4.5V
10
T = 150C
1
T = 25C VGS
1
5V
0.1
T = 25C
0.1
7V 10V
0.1
1
10
0.01 0.2
0.4
0.6
0.8
1.0
1.2
ID Drain Current (A)
On-Resistance v Drain Current
VSD Source-Drain Voltage (V) Source-Drain Diode Forward Voltage
ZXMN6A08K
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ZXMN6A08K Typical Characteristics - continued
10
VGS Gate-Source Voltage (V)
C Capacitance (pF)
600
ID = 1.4A
8 6 4 2 0
VDS = 15V
400
VGS = 0V f = 1MHz CISS COSS CRSS
200
0
1
10
VDS - Drain - Source Voltage (V) Capacitance v Drain-Source Voltage
Q - Charge (nC) Gate-Source Voltage v Gate Charge
0
1
2
3
4
5
6
Test Circuits
QG 12V
Current regulator
50k Same as D.U.T
VG
Q GS
Q GD V DS IG D.U.T ID V GS
Charge
Basic gate charge waveform
Gate charge test circuit
V DS 90% V GS RG 10% V GS td(on) t(on) tr td(off) t(on) tr RD V DS VDD
Switching time waveforms
ZXMN6A08K
Document Revision: 2
Switching time test circuit
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ZXMN6A08K
Package Outline Dimensions
DIM Min A A1 b b2 b3 c c2 D D1 E E1 0.086 0.020 0.030 0.205 0.018 0.018 0.213 0.205 0.250 0.170
Inches Max 0.094 0.005 0.035 0.045 0.215 0.024 0.023 0.245 0.265 -
Millimeters Min 2.18 0.508 0.762 5.21 0.457 0.457 5.41 5.21 6.35 4.32 Max 2.39 0.127 0.89 1.14 5.46 0.61 0.584 6.22 6.73 -
DIM Min e H L L1 L2 L3 L4 L5 1 -
Inches Max
Millimeters Min 2.29 BSC 9.40 1.40 2.74 REF 0.508 BSC 0.89 0.635 1.14 0 0 1.65 1.016 1.52 10 15 10.41 1.78 Max
0.090 BSC 0.370 0.055 0.410 0.070
0.108 REF 0.020 BSC 0.035 0.025 0.045 0 0 0.065 0.040 0.060 10 15 -
ZXMN6A08K
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ZXMN6A08K Suggested Pad Layout
6.2 0.244 3.0 0.118
5.8 0.228
1.6 0.063
6.17 0.243
2.58 0.101
mm inches
IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. 2. B. are intended to implant into the body, or support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user.
A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2009, Diodes Incorporated www.diodes.com
ZXMN6A08K
Document Revision: 2
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July 2009
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