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APT30DL60BCT(G) 600V 30A
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Ultrasoft Recovery Rectifier Diode
PRODUCT APPLICATIONS
* Anti-Parallel Diode -Switchmode Power Supply -Inverters * Applications - Induction Heating * Resonant Mode Circuits -ZVS and ZCS Topologies - Phase Shifted Bridge
PRODUCT FEATURES
* Ultrasoft Recovery Times (trr) * Popular TO-247 Package or Surface Mount D3PAK Package * Ultra Low Forward Voltage * Low Leakage Current
PRODUCT BENEFITS
* Soft Switching - High Qrr * Low Noise Switching - Reduced Ringing * Higher Reliability Systems * Minimizes or eliminates snubber
1
3
2
1 - Anode 1 2 - Common Cathode Back of Case - Cathode 3 - Anode 2
MAXIMUM RATINGS
Symbol
VR VRRM VRWM IF(AV) IF(RMS) IFSM TJ, TSTG TL
All Ratings per leg: TC = 25C unless otherwise specified.
Ratings Unit
Characteristic / Test Conditions
Maximum D.C. Reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Working Peak Reverse Voltage Maximum Average Forward current (TC = 126C, Duty Cycle = 0.5) RMS Forward Currrent (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45C, 8.3 ms) Operating and Storage Junction Temperature Range Lead Temperature for 10 Seconds
600
Volts
30 51 320 -55 to 175 C 300 Amps
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
IF = 30A VF Forward Voltage IF = 60A IF = 30A, TJ = 125C IRM CT Maximum Reverse Leakage Current Junction Capacitance, VR = 200V VR = 600V VR = 600V, TJ = 125C 31
Min
Typ
1.25 2.0 1.25
Max
1.6
Unit
Volts
25 250 pF
052-6314 Rev B 12 - 2008
A
Microsemi Website - http://www.microsemi.com
DYNAMIC CHARACTERISTICS
Symbol
trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM
APT30DL60BCT(G)
Min Typ
64 ns 317 IF = 30A, diF/dt = -200A/s VR = 400V, TC = 25C 962 7 561 IF = 30A, diF/dt = -200A/s VR = 400V, TC = 125C 2244 9 264 IF = 30A, diF/dt = -1000A/s VR = 400V, TC = 125C 3191 26 nC Amps ns nC Amps ns nC Amps
Characteristic / Test Conditions
Reverse Recovery Time Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current IF = 1A, diF/dt = -100A/s, VR = 30V, TJ = 25C
Max
Unit
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
RJC WT
Characteristic / Test Conditions
Junction-to-Case Thermal Resistance
Min
Typ
Max
1.00
Unit
C/W oz g
0.22 Package Weight 5.9 10 Torque Maximum Mounting Torque 1.1
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
lb*in N*m
1.2 ZJC, THERMAL IMPEDANCE (C/W) 1 0.8 0.6
Note:
PDM
0.4 0.2 0
t1 t2
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (seconds) FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
052-6314 Rev B 12 - 2008
TJ (C)
.562
Dissipated Power (Watts)
TC (C)
.316 .0828
ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction.
.0019
FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL
ZEXT
TYPICAL PERFORMANCE CURVES
100 90 80 IF, FORWARD CURRENT (A) 70 60 50 40 30 20 10 0 0 800 TJ= 125C trr, COLLECTOR CURRENT (A) TJ= 150C TJ= 55C 700 600 500 400 300 200 100 0 15A 60A 30A
APT30DL60BCT(G)
T = 125C J V = 400V
R
TJ= 25C
Qrr, REVERSE RECOVERY CHARGE (nC)
IRRM, REVERSE RECOVERY CURRENT (A)
0.5 1.0 1.5 2.0 2.5 3.0 VF, ANODE-TO-CATHODE VOLTAGE (V) FIGURE 2, Forward Current vs. Forward Voltage 4500 T = 125C 60A J V = 400V R 4000 3500 3000 2500 2000 1500 1000 500 15A 30A
0 200 400 600 800 1000 -diF/dt, CURRENT RATE OF CHANGE (A/s) FIGURE 3, Reverse Recovery Time vs. Current Rate of Change 32 28 24 20 16 12 8 4 0
T = 125C J V = 400V
R
60A 30A 15A
0 200 400 600 800 1000 -diF/dt, CURRENT RATE OF CHANGE (A/s) FIGURE 4, Reverse Recovery Charge vs. Current Rate of Change 1.2 1 0.8 0.6 0.4 0.2 0 IRRM
0
0 200 400 600 800 1000 -diF/dt, CURRENT RATE OF CHANGE (A/s) FIGURE 5, Reverse Recovery Current vs. Current Rate of Change 70 60 50 IF(AV) (A) 40 30 20 10 0
Duty cycle = 0.5 TJ = 126C
Kf, DYNAMIC PARAMETERS (Normalized to 1000A/s)
tRR QRR
0
25
50
75
100
125
150
25
50
75
100
125
150
175
TJ, JUNCTION TEMPERATURE (C) FIGURE 6, Dynamic Parameters vs Junction Temperature 300 CJ, JUNCTION CAPACITANCE (pF) 250 200 150 100 50 0
Case Temperature (C) FIGURE 7, Maximum Average Forward Current vs. Case Temperature
10 100 400 VR, REVERSE VOLTAGE (V) FIGURE 8, Junction Capacitance vs. Reverse Voltage
1
052-6314 Rev B 12 - 2008
Vr +18V 0V D.U.T. diF /dt Adjust
APT30DL60BCT(G)
trr/Qrr Waveform
CURRENT TRANSFORMER
Figure 9. Diode Test Circuit
1 2 3 4
IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero
1
4
6
5 3 2
0.25 IRRM Slope = diM/dt
trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr. diM/dt - Maximum Rate of Current Increase During the Trailing Portion of trr.
5 6
Figure 10, Diode Reverse Recovery Waveform and Definitions
TO-247 (BCT) Package Outline
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC 20.80 (.819) 21.46 (.845) 3.55 (.138) 3.81 (.150) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
Common Cathode
4.50 (.177) Max. 0.40 (.016) 0.79 (.031)
2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084)
19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055)
052-6314 Rev B 12 - 2008
Anode 1 Common Cathode Anode 2
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
Dimensions in Millimeters and (Inches)
Microsemi's products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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