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CYStech Electronics Corp.
High Voltage PNP Epitaxial Planar Transistor
Spec. No. : C236L3 Issued Date : 2005.08.16 Revised Date : 2005.08.18 Page No. : 1/4
BTA1727L3
Features
* High breakdown voltage, BVCEO=-400V * Low saturation voltage * High switching speed. * Complementary to BTD2568L3 * Pb-free package
Symbol
BTA1727L3
Outline
SOT-223
C
E
BBase CCollector EEmitter
C B
Absolute Maximum Ratings (Ta=25C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Base Current Power Dissipation @TC=25 Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB Pd Tj Tstg Limits -400 -400 -6 -300 -1 -100 5 150 -55~+150 Unit V V V mA A mA W C C
BTA1727L3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (Ta=25C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat)1 *VBE(sat)2 *VBE(on) *hFE1 *hFE2 *hFE3 *hFE4 fT Cob Min. -400 -400 -6 50 90 90 40 Typ. 90 7 Max. -100 -100 -0.3 -0.5 -0.8 -0.95 -0.95 260 260 Unit V V V nA nA V V V V V MHz pF
Spec. No. : C236L3 Issued Date : 2005.08.16 Revised Date : 2005.08.18 Page No. : 2/4
Test Conditions IC=-100A, IE=0 IC=-1mA, IB=0 IE=-10A, IC=0 VCB=-400V, IE=0 VEB=-4V, IC=0 IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA VCE=-10V, IC=-50mA VCE=-10V, IC=-1mA VCE=-10V, IC=-10mA VCE=-10V, IC=-50mA VCE=-10V, IC=-100mA VCE=-5V, IC=-50mA, f =100MHz VCB=-20V, f=1MHz
*Pulse Test : Pulse Width 380s, Duty Cycle2%
BTA1727L3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
1000 10000 VCESAT
VCE=10V
Spec. No. : C236L3 Issued Date : 2005.08.16 Revised Date : 2005.08.18 Page No. : 3/4
Saturation Voltage vs Collector Current
Saturation Voltage-(mV)
Current Gain--- HFE
1000
IC=30IB
100
100
IC=10IB IC=20IB
VCE=5V
10 1 10 100 1000 Collector Current ---IC(mA)
10 1 10 Collector Current ---IC(mA) 100
Saturation Voltage vs Collector Current
10000 6 5 4 3 2 1 100 1 10 100 1000 Collector Current--- IC(mA) 0 0
Power Derating Curve
VBESAT@IC=10IB
1000
Power Dissipation---PD(W)
Saturation Voltage-(mV)
50
100
150
200
Ambient Temperature---TA()
BTA1727L3
CYStek Product Specification
CYStech Electronics Corp.
SOT-223 Dimension
A
Spec. No. : C236L3 Issued Date : 2005.08.16 Revised Date : 2005.08.18 Page No. : 4/4
Marking:
B 1 2 3
C
AJ
D E F G H a1 I a2
Style: Pin 1.Base 2.Collector 3.Emitter
3-Lead SOT-223 Plastic Surface Mounted Package CYStek Package Code: L3
*: Typical
DIM A B C D E F
Inches Min. Max. 0.1142 0.1220 0.2638 0.2874 0.1299 0.1457 0.0236 0.0315 *0.0906 0.2480 0.2638
Millimeters Min. Max. 2.90 3.10 6.70 7.30 3.30 3.70 0.60 0.80 *2.30 6.30 6.70
DIM G H I a1 a2
Inches Min. Max. 0.0551 0.0709 0.0098 0.0138 0.0008 0.0039 *13o 0o 10 o
Millimeters Min. Max. 1.40 1.80 0.25 0.35 0.02 0.10 *13o 0o 10 o
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
* Lead: 42 Alloy; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
* All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTA1727L3
CYStek Product Specification

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