View HFW75N75_4692439.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

HFW75N75
Mar 2007
BVDSS = 75 V
HFW75N75
75V N-Channel MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 77 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.0105 (Typ.) @VGS=10V 100% Avalanche Tested
RDS(on) typ=10.5 m ID = 80 A
D2-PAK
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Drain-Source Voltage Drain Current Drain Current Drain Current Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25) *
TC=25 unless otherwise specified
Parameter
Value 75
Units V A A A V mJ A mJ V/ns W W W/
- Continuous (TC = 25) - Continuous (TC = 100) - Pulsed
(Note 1)
80 56 320 20
(Note 2) (Note 1) (Note 1) (Note 3)
1476 80 16 7.0 3.75 160 0.91 -55 to +175 300
Power Dissipation (TC = 25) - Derate above 25 TJ, TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
Thermal Resistance Characteristics
Symbol RJC RJA RJA Junction-to-Case Junction-to-Ambient* Junction-to-Ambient Parameter Typ. ---Max. 0.94 40 62.5 /W Units
* When mounted on the minimum pad size recommended (PCB Mount)
SEMIHOW REV.A0,Mar 2007
HFW75N75
Electrical Characteristics TC=25 C
Symbol Parameter
unless otherwise specified
Test Conditions
Min
Typ
Max
Units
On Characteristics
VGS RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250 VGS = 10 V, ID = 40 A 2.0 --4.0 V
0.0105 0.012
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 ID = 250 , Referenced to25 VDS = 75 V, VGS = 0 V VDS = 60 V, TC = 150 VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V 75 ------0.06 ------1 10 100 -100 V V/ BVDSS Breakdown Voltage Temperature Coefficient /TJ IDSS IGSSF IGSSR Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---4340 834 55 5640 1080 72
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
(Note 4,5)
VDS = 37.5 V, ID = 80 A, RG = 25
--------
30 193 130 136 77 22 19
60 380 260 270 100 ---
nC nC nC
VDS = 60 V, ID = 80 A, VGS = 10 V
(Note 4,5)
Source-Drain Diode Maximum Ratings and Characteristics
IS ISM VSD trr Qrr Continuous Source-Drain Diode Forward Current Pulsed Source-Drain Diode Forward Current Source-Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS = 80 A, VGS = 0 V IS = 80 A, VGS = 0 V diF/dt = 100 A/s (Note 4) --------68 160 80 320 1.5 --A V C
Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=307.5uH, IAS=80A, VDD=25V, RG=25, Starting TJ =25C 3. ISD80A, di/dt300A/s, VDDBVDSS , Starting TJ =25 C 4. Pulse Test : Pulse Width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature
SEMIHOW REV.A0,Mar 2007
HFW75N75
Typical Characteristics
ID , Drain Current [A]
102 150oC 25oC 101
-55oC
* Note 1. VDS = 40V 2. 250s Pulse Test
100
2
4
6
8
10
VGS , Gate-Source Voltage [V]
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
0.014 0.013 0.012 0.011 0.010 0.009 0.008 VGS = 20V
* Note : TJ = 25oC
IDR , Reverse Drain Current [A]
RDS(on) , [] Drain-Source On-Resistance
102
VGS = 10V
150oC 10
1
25oC
* Note : 1. VGS = 0V 2. 250s Pulse Test
0
25
50
75
100
125
150
175
200
100 0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
ID , Drain Current [A]
VSD , Source-Drain Voltage [V]
Figure 3. On Resistance Variation vs Drain Current and Gate Voltage
8000
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature
12
VDS = 15V
6000
VGS, Gate-Source Voltage [V]
10
VDS = 37.5V VDS =60V
Capacitances [pF]
Coss
4000
8
Ciss Crss
* Note ; 1. VGS = 0 V 2. f = 1 MHz
6
4
2000
2
* Note : ID = 80.0 A
0 10-1
100
101
0
0
20
40
60
80
100
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
SEMIHOW REV.A0,Mar 2007
HFW75N75
Typical Characteristics
(continued)
1.2
3.0
BVDSS, (Normalized) Drain-Source Breakdown Voltage
1.1
RDS(ON), (Normalized) Drain-Source On-Resistance
2.5
2.0
1.0
1.5
1.0
* Note : 1. VGS = 10 V 2. ID = 40.0 A
0.9
* Note : 1. VGS = 0 V 2. ID = 250 A
0.5
0.8 -100
-50
0
50
100
150
200
0.0 -100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Figure 7. Breakdown Voltage Variation vs Temperature
103
80
Figure 8. On-Resistance Variation vs Temperature
102
100 s
60
ID, Drain Current [A]
101
Operation in This Area is Limited by R DS(on)
DC
ID, Drain Current [A]
102
1 ms 10 ms
40
100
10-1
Notes : 1. TC = 25 oC 2. TJ = 175 C 3. Single Pulse
o
20
10-2 100
101
0 25
50
75
100
125
150
175
VDS, Drain-Source Voltage [V]
TC, Case Temperature [oC]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs Case Temperature
100
D=0.5
ZJC(t), Thermal Response
0.2
10-1
0.1 0.05 0.02 0.01 single pulse
* Notes : 1. ZJC(t) = 0.94 oC/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZJC(t)
10-2
PDM t1 t2
100 101
10
-3
10-5
10-4
10-3
10-2
10-1
t1, Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
SEMIHOW REV.A0,Mar 2007
HFW75N75
Fig 12. Gate Charge Test Circuit & Waveform
50K 12V 200nF 300nF
Same Type as DUT VDS
VGS Qg
10V
VGS
Qgs
Qgd
DUT
3mA
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
VDS RG
RL VDD
( 0.5 rated VDS )
VDS
90%
10V
DUT
Vin
10%
td(on) t on
tr
td(off) t off
tf
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
L VDS VDD ID RG DUT VDD BVDSS IAS
BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD
ID (t) VDS (t)
tp
10V
Time
SEMIHOW REV.A0,Mar 2007
HFW75N75
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT + VDS _ IS L Driver RG
Same Type as DUT
VDD
VGS
* dv/dt controlled by RG * IS controlled by pulse period
VGS ( Driver )
Gate Pulse Width D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
IS ( DUT ) IRM
di/dt
Body Diode Reverse Current
VDS ( DUT )
Body Diode Recovery dv/dt
Vf
VDD
Body Diode Forward Voltage Drop
SEMIHOW REV.A0,Mar 2007
HFW75N75
Package Dimension
SEMIHOW REV.A0,Mar 2007

▲Up To Search▲

Price & Availability of HFW75N75

	To Download HFW75N75 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .