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HEXFET(R) Power MOSFET plus Schottky Diode
l l l l l l l l l l l
IRF6798MPBF IRF6798MTRPbF
PD - 97433B
RoHs Compliant Containing No Lead and Bromide VDSS VGS RDS(on) RDS(on) Integrated Monolithic Schottky Diode 25V max 20V max 0.95m@ 10V 1.6m@ 4.5V Low Profile (<0.7 mm) Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) Dual Sided Cooling Compatible Low Package Inductance 50nC 16nC 6.8nC 64nC 38nC 1.8V Optimized for High Frequency Switching Ideal for CPU Core DC-DC Converters Optimized for Sync. FET socket of Sync. Buck Converter Low Conduction and Switching Losses Compatible with existing Surface Mount Techniques 100% Rg tested DirectFET ISOMETRIC MX
SQ SX ST MQ MX MT MP
Typical values (unless otherwise specified)
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
Description
The IRF6798MPBF combines the latest HEXFET(R) Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6798MPBF balances industry leading on-state resistance while minimizing gate charge along with low gate resistance to reduce both conduction and switching losses. This part contains an integrated Schottky diode to reduce the Qrr of the body drain diode further reducing the losses in a Synchronous Buck circuit. The reduced losses make this product ideal for high frequency/high efficiency DC-DC converters that power high current loads such as the latest generation of microprocessors. The IRF6798MPBF has been optimized for parameters that are critical in synchronous buck converter's Sync FET sockets.
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TA = 25C ID @ TA = 70C ID @ TC = 25C IDM EAS IAR
5
Typical RDS(on) (m)
Max.
Units
V
Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Single Pulse Avalanche Energy Avalanche CurrentAg
g
e e f
h
VGS, Gate-to-Source Voltage (V)
25 20 37 30 197 300 220 30
14.0 12.0 10.0 8.0 6.0 4.0 2.0 0.0 0 25 50 75 100 125 ID= 30A VDS= 20V VDS= 13V
A
mJ A
4 3 2 1 0 2 4 6 8 T J = 25C 10 12 14
ID = 37A
T J = 125C
16
18
20
150
VGS, Gate -to -Source Voltage (V) Fig 1. Typical On-Resistance vs. Gate Voltage Notes: Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state.
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage
TC measured with thermocouple mounted to top (Drain) of part. Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 0.50mH, RG = 25, IAS = 30A.
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12/10/09
IRF6798MTRPbF
Static @ TJ = 25C (unless otherwise specified)
Parameter
BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th)/TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min.
25 --- --- --- 1.35 --- --- --- --- --- 100 --- --- --- --- --- --- --- --- --- --- --- --- --- --- ---
Typ. Max. Units
--- 3.1 0.95 1.6 1.8 -5.4 --- --- --- --- --- 50 13 6.8 16 14 22.8 38 0.30 15 31 20 16 6560 1800 695 --- --- 1.3 2.1
Conditions
V VGS = 0V, ID = 1.0mA mV/C Reference to 25C, ID = 10mA m VGS = 10V, ID = 37A
VGS = 4.5V, ID 2.35 V VDS = VGS, ID = 150A --- mV/C VDS = VGS, ID = 10mA 500 A VDS = 20V, VGS = 0V 5.0 100 -100 --- 75 --- --- --- --- --- --- --- --- --- --- --- --- --- --- pF nC
i = 30A i
mA nA S
VDS = 20V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VDS = 13V, ID = 30A VDS = 13V
nC
VGS = 4.5V ID = 30A See Fig. 15 VDS = 16V, VGS = 0V VDD = 13V, VGS = 4.5VAi ID = 30A RG = 1.8 See Fig. 17 VGS = 0V VDS = 13V = 1.0MHz
ns
Diode Characteristics
Parameter
IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)Ag Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min.
--- --- --- --- ---
Typ. Max. Units
--- --- --- 30 64 37 A 300 0.75 45 96 V ns nC
Conditions
MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 30A, VGS = 0V TJ = 25C, IF = 30A di/dt = 385A/s
i
i
Notes:
Pulse width 400s; duty cycle 2%.
2
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IRF6798MTRPbF
Absolute Maximum Ratings
PD @TA = 25C PD @TA = 70C PD @TC = 25C TP TJ TSTG Power Dissipation Power Dissipation Power Dissipation Peak Soldering Temperature Operating Junction and Storage Temperature Range
e e f
Parameter
Max.
2.8 1.8 78 270 -40 to + 150
Units
W
C
Thermal Resistance
RJA RJA RJA RJC RJ-PCB Junction-to-Ambient Junction-to-Ambient Junction-to-Ambient Junction-to-Case Junction-to-PCB Mounted Linear Derating Factor
100 D = 0.50 0.20 0.10 0.05 0.02 0.01
el jl kl fl
Parameter
Typ.
--- 12.5 20 --- 1.0 0.022
Max.
45 --- --- 1.6 ---
Units
C/W
eA
W/C
Thermal Response ( Z thJA )
10
1
Ri (C/W)
R1 R1 J J 1 R2 R2 R3 R3 R4 R4 R5 R5 R6 R6 A A 2 3 3 4 4 5 5
i (sec)
0.000002 0.000716 0.004783 0.011657 1.045430 46.99450
0.0171 0.3038 0.4527 3.2257 22.7953 18.1987
0.1
1
2
0.01
Ci= i/Ri Ci= i/Ri
SINGLE PULSE ( THERMAL RESPONSE )
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + Tc 0.01 0.1 1 10 100
0.001 1E-006
1E-005
0.0001
0.001
1000
t1 , Rectangular Pulse Duration (sec)
(At lower pulse widths ZthJA & ZTHJC are combined) Notes: R is measured at TJ of approximately 90C. Used double sided cooling , mounting pad with large heatsink. Mounted on minimum footprint full size board with metalized back and with small clip heatsink.
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Surface mounted on 1 in. square Cu (still air).
Mounted to a PCB with small clip heatsink (still air)
Mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air)
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IRF6798MTRPbF
1000
TOP VGS 10V 5.0V 4.3V 3.5V 3.3V 3.0V 2.8V 2.5V
1000
TOP VGS 10V 5.0V 4.3V 3.5V 3.3V 3.0V 2.8V 2.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
10
2.5V
1
2.5V
60s PULSE WIDTH
0.1 0.1 1 Tj = 25C 1 100 0.1 1 10
60s PULSE WIDTH
Tj = 150C 10 100
VDS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 4. Typical Output Characteristics
1000 VDS = 15V 60s PULSE WIDTH 100 T J = 150C T J = 25C T J = -40C
Typical RDS(on) (Normalized)
Fig 5. Typical Output Characteristics
1.6 ID = 37A 1.4 V GS = 10V V GS = 4.5V
ID, Drain-to-Source Current (A)
1.2
10
1.0
1
0.8
0.1 1 2 3 4
0.6 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (C)
VGS, Gate-to-Source Voltage (V)
Fig 6. Typical Transfer Characteristics
100000
VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd
Fig 7. Normalized On-Resistance vs. Temperature
10 T J = 25C 8 Vgs = 3.5V Vgs = 4.0V Vgs = 4.5V Vgs = 5.0V Vgs = 7.0V Vgs = 8.0V Vgs = 10V Vgs = 15V
10000
Ciss Coss
Typical RDS(on) ( m)
C oss = C ds + C gd
C, Capacitance(pF)
6
4
1000
Crss
2
100 1 10 VDS, Drain-to-Source Voltage (V) 100
0 0 25 50 75 100 125 150 175 200
Fig 8. Typical Capacitance vs.Drain-to-Source Voltage
4
Fig 9. Typical On-Resistance vs. Drain Current and Gate Voltage
ID, Drain Current (A)
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IRF6798MTRPbF
1000 1000
OPERATION IN THIS AREA LIMITED BY RDS(on) 100sec
100
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
1msec
10
10msec DC
10 T J = 150C 1 T J = 25C T J = -40C VGS = 0V 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 VSD, Source-to-Drain Voltage (V)
1
0.1
TA = 25C TJ = 150C
Single Pulse 0.01 0.01 0.10 1.00 10.00 100.00 VDS, Drain-to-Source Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
200
Typical VGS(th) Gate threshold Voltage (V)
Fig11. Maximum Safe Operating Area
2.5
ID, Drain Current (A)
150
2.0
100
ID = 10mA 1.5
50
0 25 50 75 100 125 150 T C , Case Temperature (C)
1.0 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( C )
Fig 12. Maximum Drain Current vs. Case Temperature
900
EAS , Single Pulse Avalanche Energy (mJ)
Fig 13. Typical Threshold Voltage vs. Junction Temperature
ID 8.8A 19A BOTTOM 30A TOP
800 700 600 500 400 300 200 100 0 25 50 75
100
125
150
Starting T J , Junction Temperature (C)
Fig 14. Maximum Avalanche Energy vs. Drain Current
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IRF6798MTRPbF
Id Vds Vgs
L
0
DUT
20K 1K
S
VCC
Vgs(th)
Qgodr
Qgd
Qgs2 Qgs1
Fig 15a. Gate Charge Test Circuit
Fig 15b. Gate Charge Waveform
V(BR)DSS
15V
tp
DRIVER
VDS
L
VGS RG
D.U.T
IAS tp
+ - VDD
A
20V
0.01
I AS
Fig 16b. Unclamped Inductive Waveforms
Fig 16a. Unclamped Inductive Test Circuit
VDS VGS RG
RD
VDS 90%
D.U.T.
+
- V DD
VGS
Pulse Width 1 s Duty Factor 0.1 %
10% VGS
td(on) tr t d(off) tf
Fig 17a. Switching Time Test Circuit
Fig 17b. Switching Time Waveforms
6
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IRF6798MTRPbF
D.U.T
Driver Gate Drive
+
P.W.
Period
D=
P.W. Period VGS=10V
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
***
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
+
RG
*
* * * *
dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test
V DD
VDD
**
+ -
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* Use P-Channel Driver for P-Channel Measurements ** Reverse Polarity for P-Channel
*** VGS = 5V for Logic Level Devices
Fig 18. Diode Reverse Recovery Test Circuit for HEXFET(R) Power MOSFETs
DirectFET Board Footprint, MX Outline (Medium Size Can, X-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs.
G = GATE D = DRAIN S = SOURCE
D S G S D
D
D
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IRF6798MTRPbF
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs.
DirectFET Outline Dimension, MX Outline (Medium Size Can, X-Designation).
DIMENSIONS
METRIC CODE A B C D E F G H J K L M R P MIN 6.25 4.80 3.85 0.35 0.68 0.68 1.38 0.80 0.38 0.88 2.28 0.616 0.020 0.08 MAX 6.35 5.05 3.95 0.45 0.72 0.72 1.42 0.84 0.42 1.01 2.41 0.676 0.080 0.17 IMPERIAL MIN 0.246 0.189 0.152 0.014 0.027 0.027 0.054 0.032 0.015 0.035 0.090 0.0235 0.0008 0.003 MAX 0.250 0.201 0.156 0.018 0.028 0.028 0.056 0.033 0.017 0.039 0.095 0.0274 0.0031 0.007
DirectFET Part Marking
GATE MARKING LOGO PART NUMBER BATCH NUMBER DATE CODE
Line above the last character of the date code indicates "Lead-Free"
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IRF6798MTRPbF
DirectFET Tape & Reel Dimension (Showing component orientation).
NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6798MTRPBF). For 1000 parts on 7" reel, order IRF6798MTR1PBF REEL DIMENSIONS TR1 OPTION (QTY 1000) STANDARD OPTION (QTY 4800) IMPERIAL IMPERIAL METRIC METRIC MIN MAX MIN CODE MAX MAX MAX MIN MIN 6.9 N.C 12.992 A N.C N.C N.C 177.77 330.0 0.75 N.C 0.795 B N.C N.C N.C 19.06 20.2 0.53 0.50 0.504 C 13.2 0.520 12.8 13.5 12.8 0.059 N.C 0.059 D N.C 1.5 1.5 N.C N.C 2.31 3.937 E N.C 58.72 100.0 N.C N.C N.C F N.C 0.53 N.C 0.724 N.C N.C 18.4 13.50 0.47 0.488 G N.C 11.9 12.4 14.4 12.01 0.567 0.47 0.469 H 11.9 11.9 15.4 12.01 N.C 0.606
LOADED TAPE FEED DIRECTION
NOTE: CONTROLLING DIMENSIONS IN MM
CODE A B C D E F G H
DIMENSIONS IMPERIAL METRIC MIN MIN MAX MAX 0.311 7.90 0.319 8.10 0.154 3.90 0.161 4.10 0.469 11.90 0.484 12.30 0.215 5.45 0.219 5.55 0.201 5.10 0.209 5.30 0.256 6.50 0.264 6.70 0.059 1.50 N.C N.C 0.059 1.50 0.063 1.60
Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.12/09
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