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Advance Technical Information
GigaMOSTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFK230N20T IXFX230N20T
RDS(on) trr
TO-264 (IXFK)
VDSS ID25
= =
200V 230A 7.5m 200ns
Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md FC Weight
Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Continuous Transient TC = 25C External Lead Current Limit TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 175C TC = 25C
Maximum Ratings 200 200 20 30 230 160 630 100 3 20 1670 -55 ... +175 175 -55 ... +175 V V V V A A A A J V/ns W C C C C C Nm/lb.in. N/lb. g g
G = Gate S = Source (TAB) D = Drain TAB = Drain
G D S
(TAB)
PLUS247 (IXFX)
Features International Standard Packages High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on) Advantages Easy to Mount Space Savings High Power Density
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-264) Mounting Force TO-264 PLUS247 (PLUS247)
300 260 1.13/10 20..120 /4.5..27 10 6
Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 8mA VGS = 20V, VDS = 0V VDS = VDSS, VGS= 0V VGS = 10V, ID = 60A, Note 1 TJ = 150C
Characteristic Values Min. Typ. Max. 200 2.5 5.0 200 V V nA
Applications Synchronous Recification DC-DC Converters Battery Chargers Switched-Mode and Resonant-Mode Power Supplies DC Choppers AC Motor Drives Uninterruptible Power Supplies High Speed Power Switching Applications
50 A 3 mA 7.5 m
(c) 2009 IXYS CORPORATION, All Rights Reserved
DS100133(03/09)
IXFK230N20T IXFX230N20T
Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS 0.15 VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 Resistive Switching Times VGS = 10V, VDS = 0.5 * VDSS, ID = 100A RG = 1 (External) VGS = 0V, VDS = 25V, f = 1MHz VDS = 10V, ID = 60A, Note 1 Characteristic Values Min. Typ. Max. 100 160 28 2540 310 41 35 104 29 378 125 86 0.09 S nF pF pF ns ns ns ns nC nC nC C/W C/W
Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072
TO-264 (IXFK) Outline
Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS ISM VSD trr QRM IRM VGS = 0V Repetitive, Pulse Width Limited by TJM IF = 60A, VGS = 0V, Note 1 IF = 115A, -di/dt = 100A/s VR = 75V, VGS = 0V 0.74 10.6 Characteristic Values Min. Typ. Max. 230 920 1.3 200 A A V ns C A
PLUS 247TM (IXFX) Outline
Note 1: Pulse Test, t 300s; Duty Cycle, d 2%.
Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector)
Dim. A A1 A2 b b1 b2 C D E e L L1 Q R
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505
Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83
Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190
7,157,338B2
6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537
IXFK230N20T IXFX230N20T
Fig. 1. Output Characteristics @ 25C
240 220 200 180 VGS = 15V 10V 7V 350 300 250 7V VGS = 15V 10V
Fig. 2. Extended Output Characteristics @ 25C
ID - Amperes
160 140 120 100 80 60 40 20 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 5V 0 0 1 100 50
ID - Amperes
6V
200 150
6V
5V
2
3
4
5
6
7
8
9
VDS - Volts
VDS - Volts
Fig. 3. Output Characteristics @ 150C
240 220 200 180 VGS = 15V 10V 8V 7V 3.0 2.8 2.6 2.4
Fig. 4. RDS(on) Normalized to ID = 115A Value vs. Junction Temperature
VGS = 10V
RDS(on) - Normalized
ID - Amperes
160 140 120 100 80 60 40 20 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8
6V
2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4
I D = 230A I D = 115A
5V
3.2
3.6
4.0
-50
-25
0
25
50
75
100
125
150
175
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 115A Value vs. Drain Current
3.4 3.2 3.0 2.8 TJ = 175C 140 120 100 80 60 40 TJ = 25C 20 0 0 50 100 150 200 250 300 350 -50 VGS = 10V 180 160
Fig. 6. Drain Current vs. Case Temperature
External Lead Current Limit
RDS(on) - Normalized
2.6 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6
ID - Amperes
2.4
-25
0
25
50
75
100
125
150
175
ID - Amperes
TC - Degrees Centigrade
(c) 2009 IXYS CORPORATION, All Rights Reserved
IXFK230N20T IXFX230N20T
Fig. 7. Input Admittance
200 180 240 160 140 200 280 TJ = - 40C
Fig. 8. Transconductance
g f s - Siemens
ID - Amperes
120 100 80 25C 60 40 20 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 - 40C TJ = 150C
25C 160 120 80 40 0 0 20 40 60 80 100 120 140 160 180 200 150C
VGS - Volts
ID - Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
350 300 8 250 7 10 9 VDS = 100V I D = 115A I G = 10mA
Fig. 10. Gate Charge
IS - Amperes
VGS - Volts
TJ = 150C TJ = 25C 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
200 150 100 50 0
6 5 4 3 2 1 0 0 40 80 120 160 200 240 280 320 360 400
VSD - Volts
QG - NanoCoulombs
Fig. 11. Capacitance
100,000 1,000
Fig. 12. Forward-Bias Safe Operating Area
f = 1 MHz
Capacitance - PicoFarads
RDS(on) Limit Ciss 25s 10,000
ID - Amperes
100
Coss 1,000
100s TJ = 175C
Crss 100 0 5 10 15 20 25 30 35 40 10 1
TC = 25C Single Pulse 10
1ms 100 1000
VDS - Volts
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: F_230N20T(9E)3-25-09
IXFK230N20T IXFX230N20T
Fig. 13. Maximum Transient Thermal Impedance
0.100
Z (th)JC - C / W
0.010
0.001 0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
(c) 2009 IXYS CORPORATION, All Rights Reserved
IXYS REF: F_230N20T(9E)3-25-09

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