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Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1553 DESCRIPTION With TO-3P(H)IS package Built-in damper diode High voltage ,high speed Low collector saturation voltage APPLICATIONS For color TV horizontal output applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol ABSOLUTE MAXIMUM RATINGS AT Tc=25ae SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature CONDITIONS Open emitter Open base Open collector VALUE 1500 600 5 2.5 1 40 150 -55~150 ae ae V A A W UNIT V JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Emitter-base breakdown voltage Collector-emitter saturation voltage Emitter-base saturation voltage Collector cut-off current DC current gain Transition frequency Collector output capacitance Diode forward voltage Fall time CONDITIONS IE=200mA , IC=0 IC=2A; IB=0.6A IC=2A; IB=0.6A VCB=500V; IE=0 IC=0.5A ; VCE=5V IC=0.1A ; VCE=10V IE=0 ; VCB=10V;f=1MHz IF=2.5A ICP=2A ;IB1(end)=0.6A 8 3 95 1.6 0.5 MIN 5 5.0 TYP. 2SD1553 SYMBOL VEBO VCEsat VBEsat ICBO hFE fT COB VF tf MAX UNIT V 8.0 1.5 10 |I V V A MHz pF 2.0 1.0 |I V s JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1553 Fig.2 Outline dimensions (unindicated tolerance:A 0.15 mm) JMnic |
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