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Bulletin I27221 03/06
GA200TS60UX
"HALF-BRIDGE" IGBT INT-A-PAK
Features * Generation 4 IGBT technology * UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode * Very low conduction and switching losses * HEXFREDTM antiparallel diodes with ultra-soft recovery * Industry standard package * UL approved
Ultra-FastTM Speed IGBT
VCES = 600V VCE(on) typ. = 1.74V @ VGE = 15V, IC = 200A
Benefits
*
Increased operating efficiency * Direct mounting to heatsink * Performance optimized for power conversion: UPS, SMPS, Welding * Low EMI, requires less snubbing
INT-A-PAK
Absolute Maximum Ratings Parameters
V CES IC ICM ILM IFM V GE V ISOL PD Collector-to-Emitter Voltage Continuos Collector Current Pulsed Collector Current Peak Switching Current Peak Diode Forward Current Gate-to-Emitter Voltage RMS Isolation Voltage, Any Terminal to Case, t = 1 min Maximum Power Dissipation @ T C = 25C @ T C = 85C @ T C = 25C
Max
600 265 400 400 400 20 2500 625 325
Units
V A
V W
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GA200TS60UX
Bulletin I27221 03/06
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameters
VBRCES V CE(on) V GE(th) g fe I CES VFM I GES Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Voltage Gate Threshold Voltage Forward Transconductance Collector-to-Emiter Leakage Current Diode Forward Voltage drop Gate-to-Emitter Leakage Current 3
Min Typ Max Units Test Conditions
600 1.74 1.79 4.4 - 11 220 0.014 4.2 4.4 1 10 6.0 6.2 250 nA 2.2 2.25 6 S mA V V V GE = 0V, I C = 1mA V GE = 15V, I C = 200A V GE = 15V, IC = 200A, T J = 125C I C = 0.25mA mV/C V CE = V GE , I C = 0.25mA V CE = 20V, I C = 200A V GE = 0V, V CE = 600V V GE = 0V, V CE = 600V, T J = 125C I C = 200A, V GE = 0V I C = 200A, V GE = 0V, T J = 125C V GE = 20V
VGE(th)/TJ Temperat. Coeff. of Threshold Voltage
Switching Characteristics @ TJ = 25C (unless otherwise specified)
Parameters
Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets Cies Coes Cres trr Irr Qrr di(rec)M/dt Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Energy Turn-Off Switching Energy Total Switching Energy Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak ReverseCurrent Diode Recovery Charge Diode Peak Rate of Fall of Recovery During tb
Min Typ
900 125 306 342 194 366 213 5 16 21 20068 1254 261 179 120 10714 1922
Max Units Test Conditions
nC IC = 200A IC = 270A, V GE = 15V
ns
IC = 200A
VCC = 360V
VGE = 15V
mJ
-- -- -- -- -- -- --
-- -- -- -- -- -- --
pF ns A C A/s
TJ = 125C RG1 = 15 RG2 = 0 VGE = 0V VCC = 30V = 1 MHz IC = 200A VCC = 360V di/dt=1300A/s
Thermal- Mechanical Specifications
Parameters
TJ TSTG R thJC R thCS T Operating Junction Temperature Range Storage Temperature Range Junction-to-Case Case-to-Sink Mounting torque Weight IGBT Per Diode Per Module Case to heatsink Case to terminal 1, 2, 3 200 0.1 6 5 g Nm
Min
- 40 - 40
Typ
Max
150 125 0.2 0.4
Units
C C/ W
2
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GA200TS60UX
Bulletin I27221 03/06
140
For both:
120
Load Current (A)
100 80
Duty cycle: 50% TJ = 125C Tsink = 90C Gate drive as specified
Power Dissipation = 120 W
Square wave: 60% of rated voltage
I
60 40 20 0
Ideal diodes
0.1
1
10
100
f, Frequency (KHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
1000
IC, Collector-to-Emitter Current (A) IC, Collector-to-Emitter Current (A)
1000 Vge = 15V
500s Pulse Width
Vge = 20V
500s Pulse Width
100 Tj = 125C
100 Tj = 125C
10 Tj = 25C 1
Tj = 25C 10 0.5 1.0 1.5 2.0 2.5
VCE , Collector-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics
4.0
5.0
6.0
7.0
8.0
9.0
VGE, Gate-to-Emitter Voltage (V) Fig. 3 - Typical Transfer Characteristics
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GA200TS60UX
Bulletin I27221 03/06
160 140 120 100 80 60 40 20 0 0 50 100 150 200 250 300
3
VCE Collector-to-Emitter Voltage (V)
Maximum DC Collector Current (A)
2.5
400A
2
200A
1.5
100A
1 20 40 60 80 100 120 140 160
TC, Case Temperature (C) Fig. 4 - Maximum Collector Current vs. Case Temperature
TJ , Junction Temperature (C) Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature
1
Thermal Response (ZthJC )
D = 0.50 0.1 0.20 0.10 0.05 0.01 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001
1E-005
0.0001
0.001
0.01
0.1
1
10
t1, Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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GA200TS60UX
Bulletin I27221 03/06
20
40
VCC = 400V I C = 135A
V cc = 360V
VCE Gate-to-Emitter Voltage (V)
16
Total Switching Losses (mJ)
Tj = 125C 35 Vge = 15V Ic = 200A 30
12
8
4
25
0
0
200
400
600
800
1000
20 0 10 20 30 40 50
QG , Total gate Charge (nC) Fig. 7 - Typical Gate Charge vs. Gate-to-Emitter Voltage
RG Gate Resistance () Fig. 8 - Typ. Switching Losses vs. Gate Resistance
70 60 50 40 30 20 10 0 0 50 100 150 200 250 300 350 400 Vge = 15V Rg1 = 15 Rg2 = 0 Tj = 125C
500
IC, Collector-to-Emitter Current (A)
V cc = 360V
Vge = 20V 400
SAFE OPERATING AREA
Total Switching Losses (mJ)
300 200 100 0 0 100 200 300 400 500 600 700
VCE, Collector-to-Emitter Voltage (V)
IC, Collector-to-Emitter Current (A) Fig. 9 - Typ. Switching Losses vs. Collector-to-Emitter Current
Fig. 10 - Reverse Bias SOA
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GA200TS60UX
Bulletin I27221 03/06
1000
20000
Instantaneous Forward Current - IF (A)
15000
400A, 125C
QRR (nC)
100
T = 25C J T = 125C J
10000
200A, 125C 100A, 125C 400A, 25C
5000
200A, 25C 100A, 25C
10 1.0 2.0 3.0 4.0 5.0 6.0
0 500 1000 1500 2000
Forward Voltage Drop - VFM (V) Fig. 11 - Typ. Forward Voltage Drop vs. Instantaneous Forward Current
dIF/ dt (A/s) Fig. 12 - Typical Stored Charge vs. dI f / dt
20000
250
200
15000
400A, 125C
400A, 125C 200A, 125C 100A, 125C
10000
200A, 125C 100A, 125C 400A, 25C
I RRM (A)
150
tRR (ns)
100
400A, 25C 200A, 25C 100A, 25C
5000
200A, 25C 100A, 25C
50
0 500
1000
1500
2000
0 500
1000
1500
2000
dIF/ dt (A/s) Fig. 13 - Typical Reverse Recovery vs. dI f /dt
dIF/ dt (A/s) Fig. 14 - Typical Reverse Recovery vs. dI f /dt
6
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GA200TS60UX
Bulletin I27221 03/06
90% Vge +Vge
Vce
Ic
10% Vce
90% Ic Ic 5% Ic
td(off)
tf
Eoff =
t1+5S Vce ic dt t1
Vce Ic dt
t1
t2
Fig. 15a - Test Circuit for Measurement of ILM,
Eon, Eoff(diode), trr, Q rr, Irr, td(on), tr, td(off), tf
Fig. 15b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, t d(off), tf
GATE VOLTAGE D.U.T. 10% +Vg +Vg
trr Ic
Ic dt
Qrr =
trr id dt tx
tx 10% Vcc Vce Vcc 10% Ic 90% Ic DUT VOLTAGE AND CURRENT Ipk
10% Irr Vcc
Vpk
Irr
Ic
td(on)
tr
5% Vce
Vce Ic dt
t2 Eon = Vce ie dt t1
DIODE RECOVERY WAVEFORMS
Vd Ic dt
t4 Erec = Vd id dt t3
t1
t2
DIODE REVERSE RECOVERY ENERGY t3
t4
Fig. 15c - Test Waveforms for Circuit of Fig. 18a,
Defining E on, td(on), tr
Fig. 15d - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
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GA200TS60UX
Bulletin I27221 03/06
Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T.
VOLTAGE IN D.U.T.
CURRENT IN D1
t0
t1
t2
Figure 15e. Macro Waveforms for Figure 18a's Test Circuit
L 1000V 50V 6000F 100V Vc*
D.U.T.
RL= 0 - 480V
480V 4 X IC @25C
Figure 16. Clamped Inductive Load Test Circuit
Figure 17. Pulsed Collector Current Test Circuit
8
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GA200TS60UX
Bulletin I27221 03/06
Outline Table
Electrical Diagram
Dimensions in millimeters
Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 03/06
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