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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1633 DESCRIPTION *With TO-247 package *Complement to type 2SC4278 *High current and high power capability APPLICATIONS *For audio output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-247) and DESCRIPTION * Absolute maximum ratings(Tc=25) SYMBOL VCBO VCEO VEBO IC PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -150 -150 -6 -10 100 150 -55~150 UNIT V V V A W Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1633 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-25mA; IB=0 -150 V VCEsat Collector-emitter saturation voltage IC=-5A ;IB=-0.5A B -1.5 V VBEsat Base-emitter saturation voltage IC=-5A ;IB=-0.5A B -2.0 V ICBO Collector cut-off current VCB=-150V; IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-6V; IC=0 -0.1 mA hFE DC current gain IC=-1A ; VCE=-5V 60 320 fT Transition frequency IC=-1A ; VCE=-10V 20 MHz hFE Classifications D 60-120 E 100-200 F 160-320 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1633 Fig.2 Outline dimensions 3 |
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