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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1791 DESCRIPTION *Collector-Emitter Sustaining Voltage: VCEO(SUS)= 100V (Min.) *High Switching Speed APPLICATIONS *Designed for audio frequency power amplifier and low speed high current switching industrial use. ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL VCEO VCBO VEBO IC ICM IB B PARAMETER Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage VALUE 100 UNIT V Collector Current-Continunous Collector Current-Peak Base Current-Continunous Base Current-Peak w w scs .i w 100 7 V V 7 A 10 A 0.5 1.0 30 150 -55~150 A A .cn mi e IBM PC Tj Tstg Collector Power Dissipation @TC=25 Junction Temperature Storage Temperature Range W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 4.17 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD1791 TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 5mA B 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 5mA B 2.0 V ICBO Collector Cutoff Current VCB= 100V; IE= 0 0.1 mA ICEO Collector Cutoff Current VCE= 100V; IB= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 5 mA hFE DC Current Gain IC= 3A, VCE= 3V fT Current-Gain--Bandwidth Product Switching Times; Resistive Load ton ts tf Turn-On Time Storage Time Fall Time w w scs .i w IC= 0.7A; VCE= 10V .cn mi e 1500 30000 20 MHz 2 12 5 s s s IC= 3A; IB1= -IB2= 5mA VBB2= 4V; RL= 10 isc Websitewww.iscsemi.cn |
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