 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1933 DESCRIPTION *With TO-220Fa package *DARLINGTON *Complement to type 2SB1342 *High DC current gain APPLICATIONS *Low frequency power amplification PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 2 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 80 80 7 4 6 30 W UNIT V V V A A SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1933 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=50A; IE=0 IC=1mA;IB=0 IC=2A ;IB=4mA VCB=80V; IE=0 VEB=5V; IC=0 IC=2A ; VCE=3V IE=-0.2A ; VCE=5V;f=10MHz IE=0 ; VCB=10V;f=1MHz 1000 40 35 MIN 80 80 1.5 100 3.0 10000 MHz pF TYP. MAX UNIT V V V A mA SYMBOL V(BR)CBO V(BR)CEO VCEsat ICBO IEBO hFE fT COB 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1933 Fig.2 Outline dimensions (unindicated tolerance: 0.15 mm) 3 |
Price & Availability of 2SD1933
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |