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MITSUBISHI SEMICONDUCTORS
M81712FP
HIGH VOLTAGE THREE PHASE BRIDGE DRIVER
DESCRIPTION M81712FP is high voltage Power MOSFET and IGBT module driver for THREE PHASE bridge applications.
PIN CONFIGURATION (TOP VIEW)
FEATURES FLOATING SUPPLY VOLTAGE ................................. 600V OUTPUT CURRENT ....................... +200mA/-500mA (typ) THREE PHASE BRIDGE DRIVER 28Pin SSOP PACKAGE (Cut Pin Package) DISTANCE BETWEEN HIGHSIDE-PHASE : 3.4mm
APPLICATIONS MOSFET and IGBT module inverter driver for refrigerator, air-conditioner, washing machine, AC-servomotor and general purpose.
NC:NO CONNECTION
Outline 28X9R
BLOCK DIAGRAM
GND
12 VREG UV DETECT FILTER
INTER LOCK
28
UFB
RQ R S
27
UPO
UPIN
3
FILTER
VREG/VCC Level Shift
PULSE GEN
26
UFS VCC
1
UNIN
6
FILTER
VREG/VCC Level Shift
DELAY 18
UNO
15 UV DETECT FILTER
PGND
25 24
VFB VPO VFS VNO WFB WPO WFS WNO
VPIN VNIN
4 7
23 17 21 20
WPIN WNIN
5 8
19 16
Aug. 2009 1
MITSUBISHI SEMICONDUCTORS
M81712FP
HIGH VOLTAGE THREE PHASE BRIDGE DRIVER
ABSOLUTE MAXIMUM RATINGS (Ta=25C unless otherwise specified)
Symbol U,V,WFB U,V,WFS VBS U,V,WPO VCC U,V,WNO U,V,WIN dVS/dt PD Kq Rth(j-c) Tj Topr Tstg Parameter High Side Floating Supply Absolute Voltage High Side Floating Supply Offset Voltage High Side Floating Supply Voltage High Side Output Voltage Low Side Fixed Supply Voltage Low Side Output Voltage Logic Input Voltage Allowable Offset Supply Voltage Transient Package Power Dissipation Linear Derating Factor Junction-Case Thermal Resistance Junction Temperature Operation Temperature Storage Temperature Conditions Ratings -0.5 ~ 624 U,V,WFB-24 ~ U,V,WFB +0.5 -0.5~24 U,V,WFS-0.5 ~ U,V,WFB+0.5 -0.5~24 -0.5~VCC+0.5 -0.5~VCC+0.5 50 1.84 18.4 54.39 -20 ~ 125 -20 ~ 100 -40 ~ 125 Unit V V V V V V V V/ns W mW/C C/W C C C
VBS = *FB-*FS
*PIN, *NIN Terminal Ta = 25C, On Board Ta > 25C, On Board
RECOMMENDED OPERATING CONDITIONS
Symbol U,V,WFB U,V,WFS VBS VCC VIN VPGND Parameter High Side Floating Supply Absolute Voltage High Side Floating Supply Offset Voltage High Side Floating Supply Voltage Low Side Fixed Supply Voltage Logic Input Voltage Power GND Test conditions Min. VS+10 0 VBS = *FB-*FS *PIN, *NIN Terminal 10 10 0 -5 Limits Typ. -- -- -- -- -- -- Max. VS+20 500 20 20 5 5 Unit V V V V V V
* For proper operation, the device should be used within the recommend conditions.
THERMAL DERATING FACTOR CHARACTERISTIC (MAXIMUM RATING)
2.0
Pd (W)
1.5
1.0
0.5
0
0
25
50
75
100 Ta (C)
125
150
Aug. 2009 2
MITSUBISHI SEMICONDUCTORS
M81712FP
HIGH VOLTAGE THREE PHASE BRIDGE DRIVER
ELECTRICAL CHARACTERISTICS (Ta=25C, VCC=VBS(=*FB-*FS)=15V unless otherwise specified)
Symbol IFS IBS ICC VOH VOL VIH VIL IIH IIL VBSuvr VBSuvh tVBSuv VCCuvr VCCuvh tVCCuv IOH IOL ROH ROL tdLH(HO) tdHL(HO) trH tfH tdLH(LO) tdHL(LO) trL tfL tdLH tdHL tfilter Parameter Floating Supply Leakage Current VBS Standby Current VCC Standby Current High Level Output Voltage Low Level Output Voltage High Level Input Threshold Voltage Low Level Input Threshold Voltage High Level Input Bias Current Low Level Input Bias Current VBS Supply UV Reset Voltage VBS Supply UV Hysteresis Voltage VBS Supply UV Filter Time VCC Supply UV Reset Voltage VCC Supply UV Hysteresis Voltage VCC Supply UV Filter Time Output High Level Short Circuit Pulsed Current Output Low Level Short Circuit Pulsed Current Output High Level On Resistance Output Low Level On Resistance High Side Turn-On Propagation Delay High Side Turn-Off Propagation Delay High Side Turn-On Rise Time High Side Turn-Off Fall Time Low Side Turn-On Propagation Delay Low Side Turn-Off Propagation Delay Low Side Turn-On Rise Time Low Side Turn-Off Fall Time Delay Matching, High Side and Low Side Turn-On Delay Matching, High Side and Low Side Turn-Off Input Filter Time *PO, *NO = 0V, *PIN, *NIN = 5V, PW < 10 *PO, *NO = 15V, *PIN, *NIN = 0V, PW < 10 IO = 20mA, ROH = (VOH-VO) /20mA IO = 20mA, ROL = VO/20mA CL = 1000pF between *HO-*VS Note.1 CL = 1000pF between *HO-*VS Note.1 CL = 1000pF between *HO-*VS Note.2 CL = 1000pF between *HO-*VS Note.2 CL = 1000pF between *LO-PGND Note.1 CL = 1000pF between *LO-PGND Note.1 CL = 1000pF between *LO-PGND Note.2 CL = 1000pF between *LO-PGND Note.2 |tdLH (*HO) -tdLH (*LO)| |tdHL (*HO) -tdHL (*LO)| *PIN, *NIN : Convex Pulse *PIN, *NIN : Concave Pulse IO = 0A, *NO, *PO IO = 0A, *NO, *PO *PIN, *NIN *PIN, *NIN *PIN, *NIN = 5V *PIN, *NIN = 0V Test conditions VB = VS = 600V, 1 per phase 1 per phase Limits Min. -- -- -- 14.9 -- 2.7 -- 0.3 -- 7.5 0.2 -- 7.5 0.2 -- 120 350 -- -- 340 340 20 -- 340 340 20 -- -- -- 260 310 Typ.* -- 0.2 1.0 -- -- -- -- 0.5 0 8.5 0.5 7.5 8.5 0.5 7.5 200 500 40 15 650 650 130 50 650 650 100 50 -- -- 380 450 Max. 1.0 0.5 2.0 -- 0.1 -- 0.8 1.0 -- 9.5 0.8 -- 9.5 0.8 -- -- -- 70 30 855 855 220 75 855 855 200 75 50 50 500 590 Unit A mA mA V V V V mA A V V s V V s mA mA ns ns ns ns ns ns ns ns ns ns ns ns
* Typ. is not specified.
Aug. 2009 3
MITSUBISHI SEMICONDUCTORS
M81712FP
HIGH VOLTAGE THREE PHASE BRIDGE DRIVER
Note1 : Propagation Delay Timing (Output capacitor load CL = 1000pF).
Less than 50ns 5V P(N)IN 0V tdLH(
)
Less than 50ns
50%
50%
tdHL(
)
P(N)O
50%
50%
Note2 : Output Rise/Fall Timing (Output capacitor load CL = 1000pF).
Less than 50ns 5V P(N)IN 0V tr(
)
Less than 50ns
tf( 90% 90% 10%
)
P(N)O 10%
Aug. 2009 4
MITSUBISHI SEMICONDUCTORS
M81712FP
HIGH VOLTAGE THREE PHASE BRIDGE DRIVER
FUNCTION TABLE
U,V,WPIN HL HL LH LH X HL
Note1 Note2 Note3 Note4 : : : :
U,V,WNIN L H L H L X
UV(VCC) H H H X H L
UV(VBS) H H H H L H
U,V,WPO U,V,WNO L L H L L H L L L L L L
Behavioral state *PO = L, *NO = L *NO = H *PO ON = H *NO,*PO = L when *PIN, *NIN is "L" at the same time *PO = L when VBS UV tripped. *NO = L when VCC UV tripped.
"L" state of VBS UV, VCC UV means that UV trip voltage. In the case of both input signals (*PIN and *NIN) are "H", output signals (*PO and *NO) become "L". X (*PIN) : LH or HLO X (*HIN) : H or L. Output Signal (*PO) is triggered by the edge of input signal.
PIN
PO
TIMING DIAGRAM 1. Input/Output Timing Diagram High Active, in the case of both input signals (*PIN, *NIN) are "H", output signals (*PO, *NO) become "L".
Aug. 2009 5
MITSUBISHI SEMICONDUCTORS
M81712FP
HIGH VOLTAGE THREE PHASE BRIDGE DRIVER
2. VCC (VBS) Supply Under Voltage Lockout Timing Diagram If VBS supply voltage drops below UV trip voltage (VBSuvt) for VBS supply UV filter time, output signal is shut down. As soon as VBS supply voltage rises over UV reset voltage, output signal *PO becomes "H" at following edge of input signal.
VBSuvh VBSuvt tVBSuv
VBSuvr
If VCC supply voltage drops below UV trip voltage (VCCuvt) for VCC supply UV filter time, *NO output signal is shut down. As soon as VCC supply voltage rises over UV reset voltage, output signal *NO becomes "H" if *NIN input signal is "H".
VCCuvh VCCuvt tVCCuv
VCCuvr
If VCC supply voltage drops below UV trip voltage (VCCuvt) for VCC supply UV filter time, *PO output signal is shut down. As soon as VCC supply voltage rises over UV reset voltage, output signal *PO becomes "H" if *PIN input signal is "H".
VCCuvh VCCuvt tVCCuv
VCCuvr
Aug. 2009 6
MITSUBISHI SEMICONDUCTORS
M81712FP
HIGH VOLTAGE THREE PHASE BRIDGE DRIVER
3. Allowable Supply Voltage Transient It is recommended to suply VCC firstly and supply VBS secondly. When shutting off supply voltage, please shut off VBS firstly and shut off VCC secondly. When applying VCC and VBS, power supply should be applied slowly. If it rises rapidly, output signal (HO or LO) may be malfunction.
PACKAGE OUTLINE
36
19
HE
*1
E
F
1
18
Index mark
*2
c
NOTE) 1. DIMENSIONS "*1" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET.
D
Reference Dimension in Millimeters Symbol Min Nom Max
A
A2
e y
*3
A1
bp
Detail F
D E A2 A A1 bp c q HE e y L
14.8 8.2 - - 0 0.3 0.18 0 11.63 0.65 - 0.3
15.0 8.4 2.05 - 0.1 0.35 0.2 - 11.93 0.8 - 0.5
15.2 8.6 - 2.35 0.2 0.45 0.25 8 12.23 0.95 0.10 0.7
L
Aug. 2009 7

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