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CYStech Electronics Corp.
Low Vcesat PNP Epitaxial Planar Transistor
Spec. No. : C812I3 Issued Date : 2003.07.03 Revised Date : Page No. : 1/4
BTB1240I3
Features
* Low VCE(sat), VCE(sat)=-0.7 V (typical), at IC / IB = -2A / -0.5A * Excellent current gain characteristics * Complementary to BTD1862I3
Symbol
BTB1240I3
Outline
TO-251
BBase CCollector EEmitter
BCE
Absolute Maximum Ratings (Ta=25C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation (TA=25) Power Dissipation (TC=25) Junction Temperature Storage Temperature
Note : Single Pulse , Pw=10ms
Symbol VCBO VCEO VEBO IC ICP Pd Pd Tj Tstg
Limits -40 -30 -5 -2 -5 (Note) 1 10 150 -55~+150
Unit V V V A A W W C C
BTB1240I3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (Ta=25C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE fT Cob Min. -40 -30 -5 82 Typ. 100 50 Max. -1 -1 -1 560 Unit V V V A A V MHz pF
Spec. No. : C812I3 Issued Date : 2003.07.03 Revised Date : Page No. : 2/4
Test Conditions IC=-50A, IE=0 IC=-1mA, IB=0 IE=-50A, IC=0 VCB=-20V, IE=0 VEB=-4V, IC=0 IC=-3A, IB=-0.1A VCE=-3V, IC=-0.5A VCE=-5V, IC=-0.1A, f=100MHz VCB=-10V, f =1MHz
*Pulse Test : Pulse Width 380s, Duty Cycle2%
Classification Of hFE
Rank Range P 82~180 Q 120~270 R 180~390 S 270~560
BTB1240I3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
1000
Spec. No. : C812I3 Issued Date : 2003.07.03 Revised Date : Page No. : 3/4
Saturation Voltage vs Collector Current
10000
VCE(SAT)@IC=40IB
VCE=6V
Saturation Voltage---(mV)
Current Gain---HFE
1000
100 VCE=3V VCE=1V
IC=20IB
IC=40IB
100
IC=10IB 10 1 10 100 1000 10000
10 1 Collector Current---IC(mA) 10 100 1000 Collector Current---IC(mA) 10000
Saturation Voltage vs Collector Current
10000
VCE(SAT )@IC=10IB
Power Derating Curve
1.2 Power Dissipation---PD(W) 1 0.8 0.6 0.4 0.2 0
Saturation Voltage---(mV)
1000
100 1 10 100 1000 Collector Current---IC(mA) 10000
0
50 100 150 Ambient Temperature---TA()
200
Power Derating Curve
12 Power Dissipation---PD(W) 10 8 6 4 2 0 0 50 100 150 Case Temperature---TC() 200
BTB1240I3
CYStek Product Specification
CYStech Electronics Corp.
TO-251 Dimension
A B C D
Spec. No. : C812I3 Issued Date : 2003.07.03 Revised Date : Page No. : 4/4
Marking:
B1240
F 3 E K 2 1 J G
I H
Style: Pin 1.Base 2.Collector 3.Emitter 3-Lead TO-251 Plastic Package CYStek Package Code: I3
*: Typical
DIM A B C D E F
Inches Min. Max. 0.0177 0.0217 0.0354 0.0591 0.0177 0.0236 0.0866 0.0945 0.2520 0.2677 0.2677 0.2835
Millimeters Min. Max. 0.45 0.55 0.90 1.50 0.45 0.60 2.20 2.40 6.40 6.80 6.80 7.20
DIM G H I J K
Inches Min. Max. 0.2559 *0.1811 0.0354 0.0315 0.2047 0.2165
Millimeters Min. Max. 6.50 *4.60 0.90 0.80 5.20 5.50
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
* Lead: 42 Alloy; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
* All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTB1240I3
CYStek Product Specification

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