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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor DESCRIPTION *Collector-Emitter Breakdown Voltage-- : V(BR)CEO = 60 V *DC Current Gain-- : hFE = 750(Min) @ IC= 2A *Complement to Type MJE700T MJE800T APPLICATIONS *Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage VALUE 60 UNIT V Collector Current-Continuous Base Current PC Ti Tstg Collector Power Dissipation TC=25 Junction Temperature Storage Temperature Range w w PARAMETER scs .i w 60 5 V V 4 A 0.1 50 150 -55~150 A W .cn mi e THERMAL CHARACTERISTICS SYMBOL Rth j-c MAX 2.5 UNIT /W Thermal Resistance, Junction to Case isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MJE800T MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 60 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC=1.5A; IB=40mA 2.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 4A; IB=40mA B 3.0 V VBE(on)-1 Base-Emitter On Voltage IC=1.5A; VCE=3V 2.5 V VBE(on)-2 Base-Emitter On Voltage IC= 4A; VCE= 3V 3.0 V ICEO Collector Cutoff Current VCE= 60V; IB= 0 ICBO Collector Cutoff Current IEBO Emitter Cutoff Current hFE-1 DC Current Gain hFE-2 DC Current Gain w w scs .i w VCB= 60V; IE= 0 VCB= 60V; IE= 0;TC= 100 VEB= 5V; IC= 0 IC=1.5A ; VCE= 3V .cn mi e 0.1 0.1 0.5 2.0 mA mA mA 750 IC= 4A ; VCE= 3V 100 isc Websitewww.iscsemi.cn |
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