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| MITSUBISHI HIGH VOLTAGE DIODE MODULE RM400DY-66S High Voltage Diode Module HIGH POWER SWITCHING USE INSULATED TYPE RM400DY-66S IF ................................................................... 400A VRRM ...................................................... 3300V Insulated Type 2-element in a Pack Copper Baseplate APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 130 114 57 0.25 57 0.25 4-M8 NUTS (E) A1 K1 (C) 20 (E) A2 K2 (C) K1 124 0.25 140 C K2 C A1 E A2 E C E G 6-7 MOUNTING HOLES 40 CIRCUIT DIAGRAM 61.5 18 15 38 High Voltage Diode Module 5 LABEL 30 May 2009 1 MITSUBISHI HIGH VOLTAGE DIODE MODULE RM400DY-66S High Voltage Diode Module HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS Symbol VRRM VRSM VR(DC) IF IFSM I 2t Viso Tj Top Tstg Item Repetitive peak reverse voltage Non-repetitive peak reverse voltage Reverse DC voltage DC forward current Surge forward current Current-squared, time integration Isolation voltage Junction temperature Operating temperature Storage temperature Conditions Tj = 25 C Tj = 25 C Tj = 25 C TC = 25 C Tj = 25 C start, tw = 8.3 ms Half sign wave Tj = 25 C start, tw = 8.3 ms Half sign wave Charged part to the baseplate RMS sinusoidal, 60Hz 1min. -- -- -- Ratings 3300 3300 2200 400 3200 42.7 6000 -40 ~ +150 -40 ~ +125 -40 ~ +125 Unit V V V A A kA2s V C C C ELECTRICAL CHARACTERISTICS Symbol IRRM VFM trr Irr Qrr Erec Item Repetitive reverse current Forward voltage (Note 1) VRM = VRRM IF = 400 A VR = 1650 V, IF = 400 A di/dt = -800 A/s Ls=200nH, Tj = 125 C Conditions Tj = 25 C Tj = 125 C Tj = 25 C Tj = 125 C Min -- -- -- -- -- -- -- -- Limits Typ -- -- 3.75 3.75 0.75 300 200 0.15 Max 3.0 10 4.55 -- -- -- -- -- Unit mA V s A C J/P Reverse recovery time Reverse recovery current Reverse recovery charge Reverse recovery energy (Note 2) Note 1. It doesn't include the voltage drop by internal lead resistance. 2. Erec is the integral of 0.1VR x 0.1Irr x dt. High Voltage Diode Module May 2009 2 MITSUBISHI HIGH VOLTAGE DIODE MODULE RM400DY-66S High Voltage Diode Module HIGH POWER SWITCHING USE INSULATED TYPE THERMAL CHARACTERISTICS Symbol Rth(j-c) Rth(c-f) Item Thermal resistance Contact thermal resistance Conditions Junction to case (per 1/2 module) Case to Fin, grease = 1W/m*K D(c-f)=100m, (per 1/2 module) Min -- -- Limits Typ -- 36.0 Max 72.0 -- Unit K/kW K/kW MECHANICAL CHARACTERISTICS Symbol Mt Ms m Item Mounting torque Mass Conditions M8: Main terminals screw M6: Mounting screw -- Min 6.67 2.84 -- Limits Typ -- -- 1.5 Max 8.24 3.43 -- Unit N*m N*m kg PERFORMANCE CURVES FORWARD CHARACTERISTICS (TYPICAL) 800 REVERSE RECOVERY ENERGY Erec (J/p) REVERSE RECOVERY ENERGY CHARACTERISTICS (TYPICAL) 0.25 VR = 1650V, di/dt = 800A/s Tj = 125C, LS = 200nH 0.20 FORWARD CURRENT IF (A) 600 0.15 400 0.10 200 0.05 Tj = 25C Tj = 125C 0 0 1 2 3 4 5 6 7 0 0 200 400 600 800 1000 FORWARD VOLTAGE VF (V) FORWARD CURRENT IF (A) High Voltage Diode Module May 2009 3 MITSUBISHI HIGH VOLTAGE DIODE MODULE RM400DY-66S High Voltage Diode Module HIGH POWER SWITCHING USE INSULATED TYPE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 102 7 5 REVERSE RECOVERY SAFE OPERATING AREA (RRSOA) 104 1000 VR 2200V, di/dt 1100A/s Tj = 125C REVERSE RECOVERY CURRENT Irr (A) REVERSE RECOVERY CURRENT Irr (A) 7 5 3 2 VR = 1650V, di/dt = 800A/s Tj = 125C, LS = 200nH REVERSE RECOVERY TIME trr (s) 3 2 800 101 7 5 3 2 103 7 5 600 Irr 3 2 400 100 7 5 3 2 102 trr 7 5 3 2 7 102 7 103 200 10-1 1 10 101 2 3 45 2 3 45 0 0 1000 2000 3000 4000 FORWARD CURRENT IF (A) REVERSE VOLTAGE VR (V) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 1.2 NORMALIZED TRANSIENT THERMAL IMPEDANCE Rth(j-c) = 72K/kW 1.0 0.8 0.6 0.4 0.2 0 -3 10 2 3 5 7 10-2 2 3 5 7 10-1 2 3 5 7 100 2 3 5 7 101 TIME (s) High Voltage Diode Module May 2009 4 |
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