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| Product Specification www.jmnic.com Silicon NPN Power Transistors DESCRIPTION With TO-3PN package Built-in damper diode High breakdown voltage APPLICATIONS Character display horizontal deflection output PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2SC4742 Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta=ae ) SYMBOL VCEO VEBO IC IC(peak) IC(surge) Io PC Tj Tstg PARAMETER Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector current-surge C to E diode forward current Collector power dissipation Junction temperature Storage temperature TC=25ae Open base Open collector CONDITIONS VALUE 1500 6 6 7 16 7 50 150 -55~150 ae ae UNIT V V A A A A W JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4742 CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Emitter-base breakdown voltage Collector cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Diode forward voltage Fall time CONDITIONS IE=400mA ;IC=0 VCE=1500V; RBE=0 IC=1A ; VCE=5V IC=5A ; IB=1.25A IC=5A ; IB=1.25A IF=6A ICP=5A; IB1=1A;IB2=-2A MIN 6 0.5 25 2.0 1.5 2.0 0.4 |I V V V s TYP. MAX UNIT V mA SYMBOL V(BR)EBO ICES hFE VCE(sat) VBE(sat) VECF tf JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4742 Fig.2 outline dimensions (unindicated tolerance:A 0.1mm) JMnic |
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