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| 20 -8.0V 15 10 -2.0V 8 Vds=-5V -Id (A) 10 -1.5V Vgs=-1.0V -Id (A) 6 125C 4 25C 2 5 0 0 0.2 0.4 0.6 0.8 1 -Vds (Volts) Fig 1: On-Region Characteristics 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -Vgs (Volts) Figure 2: Transfer Characteristics 1.4 30 Rds(on) (m:) 25 Vgs=-1.8V 20 Vgs=-2.5V 15 Vgs=-4.5V 10 0 2 4 6 8 10 -Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage Normalized On-Resistance Id=-6A, Vgs=-1.8V Id=-10A, Vgs=-2.5V 1.2 Id=-11A, Vgs=-4.5V 1.0 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 40 35 30 Id=-11A 1E+01 1E+00 1E-01 125C Rds(on) (m:) -Is (A) 25 20 15 10 5 0 0 2 4 6 8 -Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C 125C 25C 1E-02 1E-03 1E-04 1E-05 0.0 0.2 0.4 0.6 0.8 1.0 -Vsd (Volts) Figure 6: Body-Diode Characteristics 5.00E+00 4.00E+00 Vds=-6V Id=-11A 6400 5600 Ciss Capacitance (pF) 4800 4000 3200 2400 1600 800 Crss 0 5 Coss -Vgs (Volts) 3.00E+00 2.00E+00 1.00E+00 0.00E+00 0 5 10 15 20 25 30 35 40 45 -Qg (nC) Figure 7: Gate-Charge Characteristics 0 10 15 20 -Vds (Volts) Figure 8: Capacitance Characteristics 100.0 Rds(on) limited Tj(max)=150C Ta=25C 10Ps 100Ps 1ms 10ms 40 Tj(max)=150C Ta=25C 30 -Id (Amps) Power (W) 10.0 20 1.0 1s 10s DC 0.1 0.1 1 -Vds (Volts) 10 0.1s 10 100 0 0.001 0.01 0.1 1 10 100 1000 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZTja Normalized Transient Thermal Resistance D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=90C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 Single Pulse 0.01 0.00001 Pd Ton T 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance |
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