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Freescale Semiconductor Technical Data
Document Number: MRF7S27130H Rev. 0, 9/2007
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for WiMAX base station applications with frequencies up to 2700 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class AB and Class C amplifier applications. * Typical WiMAX Performance: VDD = 28 Volts, IDQ = 1500 mA, Pout = 23 Watts Avg., f = 2500 and 2700 MHz, 802.16d, 64 QAM 3/4, 4 bursts, 7 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. Power Gain -- 16.5 dB Drain Efficiency -- 20% Device Output Signal PAR -- 8.2 dB @ 0.01% Probability on CCDF ACPR @ 5.25 MHz Offset -- - 49 dBc in 0.5 MHz Channel Bandwidth * Capable of Handling 10:1 VSWR, @ 32 Vdc, 2600 MHz, 105 Watts CW Peak Tuned Output Power Features * Characterized with Series Equivalent Large - Signal Impedance Parameters * Internally Matched for Ease of Use * Integrated ESD Protection * Greater Negative Gate - Source Voltage Range for Improved Class C Operation * RoHS Compliant * In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF7S27130HR3 MRF7S27130HSR3
2500- 2700 MHz, 23 W AVG., 28 V WiMAX LATERAL N - CHANNEL RF POWER MOSFETs
CASE 465 - 06, STYLE 1 NI - 780 MRF7S27130HR3
CASE 465A - 06, STYLE 1 NI - 780S MRF7S27130HSR3
Table 1. Maximum Ratings
Rating Drain- Source Voltage Gate- Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) CW Operation @ TC = 25C Derate above 25C Symbol VDS VGS VDD Tstg TC TJ CW Value - 0.5, +65 - 6.0, +10 32, +0 - 65 to +150 150 225 150 0.83 Unit Vdc Vdc Vdc C C C W C/W
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 80C, 104 W CW Case Temperature 69C, 23 W CW Symbol RJC Value (2,3) 0.32 0.36 Unit C/W
1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Design Tools (Software & Tools)/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.
Freescale Semiconductor, Inc., 2007. All rights reserved.
MRF7S27130HR3 MRF7S27130HSR3 1
RF Device Data Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1B (Minimum) A (Minimum) IV (Minimum)
Table 4. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 348 Adc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 1500 mAdc) Fixture Gate Quiescent Voltage (1) (VDD = 28 Vdc, ID = 1500 mAdc, Measured in Functional Test) Drain- Source On - Voltage (VGS = 10 Vdc, ID = 3.4 Adc) Dynamic Characteristics (2) Reverse Transfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Input Capacitance (VDS = 28 Vdc, VGS = 0 Vdc 30 mV(rms)ac @ 1 MHz) Crss Coss Ciss -- -- -- 10.4 711 326 -- -- -- pF pF pF VGS(th) VGS(Q) VGG(Q) VDS(on) 1.2 -- 4 0.1 2 2.7 5.4 0.24 2.7 -- 7 0.3 Vdc Vdc Vdc Vdc IDSS IDSS IGSS -- -- -- -- -- -- 10 1 1 Adc Adc Adc Symbol Min Typ Max Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1500 mA, Pout = 23 W Avg., f = 2500 MHz and f = 2700 MHz, WiMAX Signal, 802.16d, 7 MHz Channel Bandwidth, 64 QAM 3/4, 4 Bursts, PAR = 9.5 dB @ 0.01% Probability on CCDF. ACPR measured in 0.5 MHz Channel Bandwidth @ 5.25 MHz Offset. Power Gain Drain Efficiency Output Peak - to - Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss Gps D PAR ACPR IRL 15 18 7.5 -- -- 16.5 20 8.2 - 49 -8 18.5 23 -- - 46 -5 dB % dB dBc dB
1. VGG = 2 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit schematic. 2. Part internally matched both on input and output. (continued)
MRF7S27130HR3 MRF7S27130HSR3 2 RF Device Data Freescale Semiconductor
Table 4. Electrical Characteristics (TC = 25C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit Typical Performances OFDM Signal (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1500 mA, Pout = 23 W Avg., f = 2500 MHz and f = 2700 MHz, WiMAX Signal, OFDM Single - Carrier, 7 MHz Channel Bandwidth, 64 QAM 3/4, 4 Bursts, PAR = 9.5 dB @ 0.01% Probability on CCDF. Mask System Type G @ Pout = 23 W Avg. Mask Point B at 3.5 MHz Offset Point C at 5 MHz Offset Point D at 7.4 MHz Offset Point E at 14 MHz Offset Point F at 17.5 MHz Offset RCE EVM -- -- -- -- -- -- -- - 27 - 40 - 44 - 60 - 60 - 33 2.2 -- -- -- -- -- -- -- dB % rms dBc
Relative Constellation Error @ Pout = 23 W Avg. (1) Error Vector Magnitude (Typical EVM Performance @ Pout = 23 W Avg. with OFDM 802.16d Signal Call)
(1)
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1500 mA, 2500 - 2700 MHz Bandwidth Video Bandwidth @ 130 W PEP Pout where IM3 = - 30 dBc (Tone Spacing from 100 kHz to VBW) IMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both sidebands) Gain Flatness in 200 MHz Bandwidth @ Pout = 23 W Avg. Average Deviation from Linear Phase in 200 MHz Bandwidth @ Pout = 105 W CW Average Group Delay @ Pout = 105 W CW, f = 2600 MHz Part - to - Part Insertion Phase Variation @ Pout = 105 W CW, f = 2600 MHz, Six Sigma Window Gain Variation over Temperature ( - 30C to +85C) Output Power Variation over Temperature ( - 30C to +85C) 1. RCE = 20Log(EVM/100) VBW -- 40 -- MHz
GF Delay G P1dB
-- -- -- -- -- --
1.2 135 1.5 81.3 0.013 0.01
-- -- -- -- -- --
dB ns dB/C dBm/C
MRF7S27130HR3 MRF7S27130HSR3 RF Device Data Freescale Semiconductor 3
R1 VBIAS
R3
Z18 VSUPPLY +
R2
C2
C3 Z17 Z9
C4
C6
C7
C8
C12
RF INPUT
Z1
Z2
Z3 C1
Z4
Z5
Z6
Z7
Z8
Z10
Z11
Z12
Z13 C13
Z14
Z15
RF Z16 OUTPUT
DUT Z19
C5
C10
C11
C9
Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10
0.320 x 0.084 Microstrip 0.380 x 0.240 Microstrip 0.046 x 0.084 Microstrip 0.273 x 0.084 Microstrip 0.360 x 0.600 Microstrip 0.260 x 0.394 Microstrip 0.145 x 0.922 Microstrip 0.455 x 0.922 Microstrip 0.106 x 0.716 Microstrip 0.413 x 0.716 Microstrip
Z11 Z12 Z13 Z14 Z15 Z16 Z17* Z18, Z19* PCB
0.251 x 0.084 Microstrip 0.160 x 0.162 Microstrip 0.566 x 0.084 Microstrip 0.059 x 0.084 Microstrip 0.080 x 0.123 Microstrip 0.583 x 0.084 Microstrip 0.950 x 0.100 Microstrip 0.560 x 0.100 Microstrip Taconix TLX8 - 0300, 0.030, r = 2.55
* Variable for tuning
Figure 1. MRF7S27130HR3(HSR3) Test Circuit Schematic Table 5. MRF7S27130HR3(HSR3) Test Circuit Component Designations and Values
Part C1 C2, C6, C7, C8, C9, C10, C11 C3 C4, C5 C12 C13 R1, R2 R3 Description 2 pF Chip Capacitor 10 F, 50 V Chip Capacitors 3 pF Chip Capacitor 3.6 pF Chip Capacitors 470 F, 63 V Electrolytic Capacitor, Radial 5.6 pF Chip Capacitor 2 K, 1/4 W Chip Resistors 10 , 1/4 W Chip Resistor Part Number ATC100B2R0BT500XT C5750X5R1H106M ATC100B3R0BT500XT ATC100B3R6BT500XT EKME630ELL471MK255 ATC100B5R6BT500XT CRCW12062001FKEA CRCW120610R1FKEA Manufacturer ATC TDK ATC ATC Multicomp ATC Vishay Vishay
MRF7S27130HR3 MRF7S27130HSR3 4 RF Device Data Freescale Semiconductor
C6
C7
C8
VGS R1 R3 R2 C2 C4 C3 C12
VDD
C1
CUT OUT AREA
C13
C11 C5
C9
C10
MRF7S27130H/HS Rev. 0
Figure 2. MRF7S27130HR3(HSR3) Test Circuit Component Layout
MRF7S27130HR3 MRF7S27130HSR3 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
18 17.9 17.8 Gps, POWER GAIN (dB) 17.7 17.6 17.5 17.4 17.3 17.2 17.1 17 2500 2525 2550 Gps IRL VDD = 28 Vdc, Pout = 23 W (Avg.), IDQ = 1500 mA 802.16d, 64 QAM 3/4, 4 Bursts, 7 MHz Channel Bandwidth Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF D 25 24 23 22 21 20 ACPR (dBc) -46 -47 -48 -49 ACPR 2575 2600 2625 2650 2675 -50 2700 -5 -6 -7 -8 -9 -10 D, DRAIN EFFICIENCY (%) D, DRAIN EFFICIENCY (%) -5 -6 ACPR (dBc) -7 -8 -9 -10 IRL, INPUT RETURN LOSS (dB) 1000 mA IDQ = 2250 mA -40 IRL, INPUT RETURN LOSS (dB)
f, FREQUENCY (MHz)
Figure 3. WiMAX Broadband Performance @ Pout = 23 Watts Avg.
17.7 17.6 17.5 Gps, POWER GAIN (dB) 17.4 17.3 17.2 17.1 17 16.9 16.8 16.7 2500 2525 2550 ACPR 2575 2600 2625 2650 2675 IRL VDD = 28 Vdc, Pout = 43 W (Avg.), IDQ = 1500 mA 802.16d, 64 QAM 3/4, 4 Bursts, 7 MHz Channel Bandwidth Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF D Gps 33 32 31 30 29 28 -36 -37 -38 -39 -40 2700
f, FREQUENCY (MHz)
Figure 4. WiMAX Broadband Performance @ Pout = 43 Watts Avg.
19 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) IDQ = 2250 mA 18 Gps, POWER GAIN (dB) 2000 mA 1500 mA 1200 mA 16 1000 mA 15 VDD = 28 Vdc, IDQ = 1500 mA f1 = 2595 MHz, f2 = 2605 MHz Two-Tone Measurements, 10 MHz Tone Spacing 1 10 100 500 -10 VDD = 28 Vdc, IDQ = 1500 mA f1 = 2595 MHz, f2 = 2605 MHz Two-Tone Measurements, 10 MHz Tone Spacing
-20
17
-30
-50 1500 mA 1200 mA -60 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 200 2000 mA
14 Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus Output Power
Figure 6. Third Order Intermodulation Distortion versus Output Power
MRF7S27130HR3 MRF7S27130HSR3 6 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
IMD, INTERMODULATION DISTORTION (dBc) VDD = 28 Vdc, IDQ = 1500 mA f1 = 2595 MHz, f2 = 2605 MHz Two-Tone Measurements, 10 MHz Tone Spacing IMD, INTERMODULATION DISTORTION (dBc) -20 -30 -40 3rd Order -50 5th Order -60 7th Order -70 -80 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 200 0 -10 -20 IM3-U -30 -40 -50 IM7-U -60 1 10 TWO-TONE SPACING (MHz) 100 IM3-L IM5-L IM5-U VDD = 28 Vdc, Pout = 130 W (PEP), IDQ = 1500 mA Two-Tone Measurements (f1 + f2)/2 = Center Frequency of 2600 MHz
IM7-L
Figure 7. Intermodulation Distortion Products versus Output Power
D, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) 55 50 45 40 35 30 25 20 15 10 5 0 1 10 D ACPR Gps
Figure 8. Intermodulation Distortion Products versus Tone Spacing
-10 -30_C 25_C -15 85_C -20 85_C -25 -35 -40 TC = -30_C -45 -50 85_C 25_C -55 -60 -65 300 ACPR (dBc) 25_C -30_C -30
VDD = 28 Vdc, IDQ = 1500 mA f = 2600 MHz, 802.16d, 64 QAM 3/4 4 Bursts, 7 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF
100
Pout, OUTPUT POWER (WATTS) AVG. WiMAX
Figure 9. WiMAX, ACPR, Power Gain and Drain Efficiency versus Output Power
19 TC = -30_C 18 Gps, POWER GAIN (dB) 17 Gps 16 15 14 13 1 10 Pout, OUTPUT POWER (WATTS) CW VDD = 28 Vdc IDQ = 1500 mA f = 2600 MHz 100 85_C 30 20 10 0 300 25_C -30_C 60 25_C 50 85_C 40 18 IDQ = 1500 mA f = 2600 MHz D, DRAIN EFFICIENCY (%) 17 Gps, POWER GAIN (dB)
16
15
32 V
14 VDD = 24 V 13 0 25 50 75 100 125 150 175 200 Pout, OUTPUT POWER (WATTS) CW 28 V
D
Figure 10. Power Gain and Drain Efficiency versus CW Output Power
Figure 11. Power Gain versus Output Power
MRF7S27130HR3 MRF7S27130HSR3 RF Device Data Freescale Semiconductor 7
TYPICAL CHARACTERISTICS
109
108 MTTF (HOURS)
107
106
105 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 23 W Avg., and D = 20%. MTTF calculator available at http:/www.freescale.com/rf. Select Tools/ Software/Application Software/Calculators to access the MTTF calcu- lators by product.
Figure 12. MTTF versus Junction Temperature
WiMAX TEST SIGNAL
100 10 Input Signal PROBABILITY (%) 1 0.1 (dB) 0.01 0.001 0.0001 0 802.16d, 64 QAM 3/4, 4 Bursts, 7 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF 2 4 6 8 10 Compressed Output Signal @ 23 W Avg. Pout
-10 -20 -30 -40 -50 -60 -70 -80 -90 -100 Point D -110 -9 -7.2 -5.4 Point B Point C
7 MHz Channel BW System Type G
Point B Point C Point D
PEAK-TO-AVERAGE (dB)
Figure 13. OFDM 802.16d Test Signal
-3.6 -1.8
0
1.8
3.6
5.4
7.2
9
f, FREQUENCY (MHz)
Figure 14. WiMAX Spectrum Mask Specifications
MRF7S27130HR3 MRF7S27130HSR3 8 RF Device Data Freescale Semiconductor
Zo = 5 f = 2700 MHz
Zsource
f = 2500 MHz
f = 2700 MHz Zload f = 2500 MHz
VDD = 28 Vdc, IDQ = 1500 mA, Pout = 23 W Avg. f MHz 2500 2525 2550 2575 2600 2625 2650 2675 2700 Zsource W 4.499 - j2.335 4.382 - j1.944 4.294 - j1.567 4.234 - j1.194 4.209 - j0.820 4.219 - j0.447 4.248 - j0.090 4.304 + j0.261 4.390 + j0.612 Zload W 2.936 - j4.876 2.885 - j4.666 2.838 - j4.467 2.797 - j4.273 2.763 - j4.084 2.733 - j3.903 2.706 - j3.732 2.678 - j3.570 2.652 - j3.410
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground.
Input Matching Network
Device Under Test
Output Matching Network
Z
source
Z
load
Figure 15. Series Equivalent Source and Load Impedance MRF7S27130HR3 MRF7S27130HSR3 RF Device Data Freescale Semiconductor 9
PACKAGE DIMENSIONS
B G
1
2X
Q bbb
M
TA
M
B
M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF
3 (FLANGE)
B
2
K
D bbb
M
TA
M
B
M
M
(INSULATOR)
R
M
(LID)
bbb N H
(LID)
M
TA
B
M
ccc
M
TA
M
B
M
S
M
(INSULATOR)
ccc C
TA
M
B
M
aaa
M
TA
M
B
M
F E A
(FLANGE)
A
T
SEATING PLANE
CASE 465 - 06 ISSUE G NI - 780 MRF7S27130HR3
STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
4X U (FLANGE)
B
1
4X Z (LID)
(FLANGE)
B
2
2X
K
D bbb
M
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 --- 0.040 --- 0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 --- 1.02 --- 0.76 0.127 REF 0.254 REF 0.381 REF
TA
M
B
M
N
(LID)
R
M
(LID)
ccc M H
3
TA
M
B
M
ccc aaa
M
TA TA
M
B B
M
(INSULATOR)
S
M
(INSULATOR) M
bbb C
M
TA
B
M
M
M
F T
SEATING PLANE
E A
(FLANGE)
A
CASE 465A - 06 ISSUE H NI - 780S MRF7S27130HSR3
MRF7S27130HR3 MRF7S27130HSR3 10
STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE
RF Device Data Freescale Semiconductor
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process. Application Notes * AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 0 Date Sept. 2007 * Initial Release of Data Sheet Description
MRF7S27130HR3 MRF7S27130HSR3 RF Device Data Freescale Semiconductor 11
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MRF7S27130HR3 MRF7S27130HSR3
Rev. 12 0, 9/2007 Document Number: MRF7S27130H
RF Device Data Freescale Semiconductor

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