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NTTFS5820NL Power MOSFET
60 V, 37 A, 11.5 mW
Features
* * * *
Low RDS(on) Low Capacitance Optimized Gate Charge These Devices are Pb-Free and are RoHS Compliant
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V(BR)DSS 60 V RDS(on) MAX 11.5 mW @ 10 V 15 mW @ 4.5 V ID MAX 37 A
MAXIMUM RATINGS (TJ = 25C unless otherwise stated)
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Continuous Drain Current RqJC (Note 1) Power Dissipation RqJC (Note 1) Pulsed Drain Current Steady State TA = 25C TA = 100C TA = 25C TA = 100C TC = 25C TC = 100C TC = 25C TC = 100C tp = 10 ms IDM TJ, Tstg IS L = 0.1 mH EAS IAS TL PD ID PD Symbol VDSS VGS ID Value 60 20 11 7 2.7 1.1 37 24 33 13 149 -55 to +150 37 48 31 260 A C A mJ A C W
1
Unit V V A G (4) S (1,2,3) N-Channel MOSFET D (5-8)
W
A 1 S S S G
MARKING DIAGRAM
WDFN8 (m8FL) CASE 511AB 5820 A Y WW G 5820 AYWWG G D D D D
Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain-to-Source Avalanche Energy
= Specific Device Code = Assembly Location = Year = Work Week = Pb-Free Package
Lead Temperature for Soldering Purposes (1/8" from case for 10 s)
(Note: Microdot may be in either location)
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
Device NTTFS5820NLTAG Package Shipping WDFN8 1500 / Tape & Reel (Pb-Free)
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Junction-to-Case - Steady State (Note 1) Junction-to-Ambient - Steady State (Note 1) Symbol RqJC RqJA Value 3.8 46.7 Unit C/W
NTTFS5820NLTWG WDFN8 5000 / Tape & Reel (Pb-Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
1. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces.
(c) Semiconductor Components Industries, LLC, 2010
April, 2010 - Rev. 0
1
Publication Order Number: NTTFS5820NL/D
NTTFS5820NL
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified)
Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/TJ IDSS IGSS VGS(TH) VGS(TH)/TJ RDS(on) gFS Ciss Coss Crss QG(TOT) QG(TH) QGS QGD VGP RG td(on) tr td(off) tf VSD tRR ta tb QRR VGS = 0 V, dIS/dt = 100 A/ms, IS = 10 A TJ = 25C TJ = 125C VGS = 4.5 V, VDS = 48 V, ID = 10 A, RG = 2.5 W VGS = 4.5 V, VDS = 48 V, ID = 10 A VGS = 10 V, VDS = 48 V, ID = 10 A VGS = 4.5 V, VDS = 48 V, ID = 10 A Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Plateau Voltage Gate Resistance SWITCHING CHARACTERISTICS (Note 3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 10 28 19 22 ns VGS = 0 V, f = 1.0 MHz, VDS = 25 V VGS = 10 V VGS = 4.5 V Forward Transconductance CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 1462 150 96 28 15 1 4 8 3 0.62 V W nC nC pF ID = 8.7 A ID = 7.3 A VGS = 0 V, VDS = 60 V TJ = 25C TJ = 125C VGS = 0 V, ID = 250 mA 60 57 1.0 10 100 nA V mV/C mA Symbol Test Condition Min Typ Max Unit
Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain-to-Source On Resistance
VDS = 0 V, VGS = 20 V VGS = VDS, ID = 250 mA 1.5 6.2 10.1 13.0 24.6
2.3
V mV/C
11.5 15
mW
VDS = 5 V, ID = 10 A
S
DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VGS = 0 V, IS = 10 A 0.79 0.65 19 13 6 15 nC ns 1.2 V
Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge
2. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 3. Switching characteristics are independent of operating junction temperatures.
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NTTFS5820NL
TYPICAL CHARACTERISTICS
80 70 ID, DRAIN CURRENT (A) 60 50 40 30 20 10 0 0 1 2 3 3.4 V 3.2 V 3.0 V 2.8 V 4 5 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 10 V 80 4.0 V 3.8 V 3.6 V TJ = 25C ID, DRAIN CURRENT (A) 70 60 50 40 30 20 10 0 1 TJ = 25C TJ = 125C 2 3 TJ = -55C 4 5 VDS 10 V
VGS = 5 V
VGS, GATE-TO-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.030 0.025 0.020 0.015 0.010 0.005 ID = 10 A TJ = 25C RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.016
Figure 2. Transfer Characteristics
TJ = 25C 0.014 VGS = 4.5 V
0.012 VGS = 10 V
0.010
2
4
6
8
10
12
0.008
5
10
15
20
25
30
35
40
VGS, GATE-TO-SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED)
Figure 3. On-Resistance vs. Gate-to-Source Voltage
2.1 1.9 1.7 1.5 1.3 1.1 0.9 0.7 0.5 -50 -25 0 25 50 75 100 125 150 100 ID = 10 A VGS = 10 V IDSS, LEAKAGE (nA) 10,000 100,000
Figure 4. On-Resistance vs. Drain Current and Gate Voltage
VGS = 0 V
TJ = 150C
1,000
TJ = 125C
10
20
30
40
50
60
TJ, JUNCTION TEMPERATURE (C)
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 5. On-Resistance Variation with Temperature
Figure 6. Drain-to-Source Leakage Current vs. Voltage
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NTTFS5820NL
TYPICAL CHARACTERISTICS
1800 1600 C, CAPACITANCE (pF) 1400 1200 1000 800 600 400 200 0 0 Coss Crss 10 20 30 40 50 60 DRAIN-TO-SOURCE VOLTAGE (V) Ciss VGS = 0 V TJ = 25C 10 VGS, GATE-TO-SOURCE VOLTAGE (V) 8 6 4 Qgs 2 0
QT
Qgd VDS = 48 V ID = 10 A TJ = 25C
0
5
10
15
20
25
30
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate-to-Source Voltage vs. Total Charge
40 IS, SOURCE CURRENT (A)
1000 VDD = 48 V ID = 10 A VGS = 4.5 V 100 t, TIME (ns) tf td(on) td(off)
30
VGS = 0 V TJ = 25C
tr 10
20
10
1
1
10 RG, GATE RESISTANCE (W)
100
0 0.5
0.6
0.7
0.8
0.9
1.0
VSD, SOURCE-TO-DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation vs. Gate Resistance
1000 VGS = 10 V Single Pulse TC = 25C 100 ms 1 ms 10 ms 1 RDS(on) Limit Thermal Limit Package Limit 0.1 1 10 VDS, DRAISN VOLTAGE (V) EAS, SINGLE PULSE DRAIN-TO- SOURCE AVALANCHE ENERGY (mJ) 50 40 30 20 10 0
Figure 10. Diode Forward Voltage vs. Current
ID, DRAIN CURRENT (A)
100
10 ms
10
dc
0.1
100
25
50 75 100 125 TJ, STARTING JUNCTION TEMPERATURE (C)
150
Figure 11. Maximum Rated Forward Biased Safe Operating Area
Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature
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NTTFS5820NL
TYPICAL CHARACTERISTICS
RqJA(t) (C/W) EFFECTIVE TRANSIENT THERMAL RESISTANCE
100 Duty Cycle = 0.5 10 0.2 0.1 1 0.05 0.02 0.01
0.1 Single Pulse 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
0.01 0.000001
PULSE TIME (sec)
Figure 13. Thermal Response
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NTTFS5820NL
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P CASE 511AB-01 ISSUE B
2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 2X
0.20 C D D1
8765
A
B
0.20 C E1 E
4X
q
1234
TOP VIEW 0.10 C A 0.10 C SIDE VIEW
8X b CAB
c
A1
6X
C
SEATING PLANE
e
DETAIL A
DETAIL A
DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q
MILLIMETERS MIN NOM MAX 0.70 0.75 0.80 0.00 --- 0.05 0.23 0.30 0.40 0.15 0.20 0.25 3.30 BSC 2.95 3.05 3.15 1.98 2.11 2.24 3.30 BSC 2.95 3.05 3.15 1.47 1.60 1.73 0.65 BSC 0.30 0.41 0.51 0.64 --- --- 0.30 0.43 0.56 0.06 0.13 0.20 1.40 1.50 1.60 0_ --- 12 _
INCHES NOM 0.030 --- 0.012 0.008 0.130 BSC 0.116 0.120 0.078 0.083 0.130 BSC 0.116 0.120 0.058 0.063 0.026 BSC 0.012 0.016 0.025 --- 0.012 0.017 0.002 0.005 0.055 0.059 0_ --- MIN 0.028 0.000 0.009 0.006
MAX 0.031 0.002 0.016 0.010 0.124 0.088 0.124 0.068 0.020 --- 0.022 0.008 0.063 12 _
SOLDERING FOOTPRINT*
e/2
1 4
0.10 0.05
c
L
0.42 K
PACKAGE OUTLINE
8X
0.65 PITCH
0.66
4X
E2
8 5
M D2 BOTTOM VIEW L1 0.75 0.57 2.30 3.60
G
0.47
2.37 3.46
DIMENSION: MILLIMETERS
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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NTTFS5820NL/D

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