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| 2SB065030MLJY 2SB065030MLJY SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION O 2SB065030MLJY is a schottky barrier diode chips Lb La fabricated in silicon epitaxial planar technology; O O O O O O Low power losses, high efficiency; Guard ring construction for transient protection; Low forward voltage drop; High ESD capability; High surge capability; Packaged products are widely used in switching power suppliers, polarity protection circuits and other electronic circuits; O Chip Size:650m X 650m; Chip Thickness: 15520um Gross die:26000 Die/Wafer(5 inch) Product Name 2SB065030MLJY Chip Topography and Dimensions La: Chip Size: 650m; Lb: Pad Size: 580m; ORDERING SPECIFICATIONS Specification For Au and AlSi wire bonding package O O ABSOLUTE MAXIMUM RATINGS Parameters Maximum Repetitive Peak Reverse Voltage Average Forward Rectified Current Peak Forward Surge Current@8.3ms Maximum Operation Junction Temperature Storage Temperature Range Symbol VRRM IFAV IFSM TJ TSTG Ratings 30 0.5 5.5 125 -40~125 Unit V A A C C ELECTRICAL CHARACTERISTICS (Tamb=25C) Parameters Reverse Voltage Forward Voltage Reverse Current Symbol VBR VF1 VF2 IR1 IR2 Test Conditions IR=130A IF=100mA IF=500mA VR=15V VR=30V Min. 30 ----Max. -0.375 0.43 20 130 Unit V V V A A HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http: www.silan.com.cn REV:1.0 2007.10.24 Page 1 of 1 |
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