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| Ordering number : ENA1125 FH102A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Composite Transistor FH102A Features * High-Frequency Low-Noise Amplifier, Differential Amplifier Applications * * Composite type with 2 transistors contained in the MCP package currently in use, improving the mounting efficiency greatly. The FH102A is formed with two chips, being equivalent to the 2SC5226A, placed in one package. Optimal for differential amplification due to excellent thermal equilibrium and pair capability. Specifications Absolute Maximum Ratings at Ta=25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Total Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC PT Tj Tstg When mounted on ceramic substrate (250mm20.8mm) 1unit When mounted on ceramic substrate (250mm20.8mm) Conditions Ratings 20 10 2 70 300 500 150 --55 to +150 Unit V V V mA mW mW C C Electrical Characteristics at Ta=25C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol ICBO IEBO hFE Conditions VCB=10V, IE=0A VEB=1V, IC=0A VCE=5V, IC=20mA 90 Ratings min typ max 1.0 10 200 Unit A A Marking : 102 Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 60408AB TI IM TC-00001436 No. A1125-1/6 FH102A Continued from preceding page. Parameter DC Current Gain Ratio Base-to-Emitter Voltage Diffrence Gain-Bandwidth Product Output Capacitance Reverse Transfer Capacitance Forward Transfer Gain Noise Figure Symbol hFE(small/large) VBE(largel-smal) fT Cob Cre 2 S21e 1 2 S21e 2 Conditions VCE=5V, IC=20mA VCE=5V, IC=20mA VCE=5V, IC=20mA VCB=10V, f=1MHz VCB=10V, f=1MHz VCE=5V, IC=20mA, f=1GHz VCE=2V, IC=3mA, f=1GHz VCE=5V, IC=7mA, f=1GHz Ratings min 0.7 5 typ 0.95 1.0 7 0.75 0.5 9 12 8 1.0 1.8 1.2 max Unit mV GHz pF pF dB dB dB NF Note) The specifications shown above are for each individual transistor except the hFE(small/large) and VBE (large-small) for which pair capability is also shown. Package Dimensions unit : mm (typ) 7026-002 0.425 0.25 0.15 Electrical Connection B1 B2 E2 6 5 4 2.1 1.25 0.05 0.2 0.425 1 0.65 2 2.0 3 C1 E1 C2 1 : Collector1 2 : Emitter1 3 : Collector2 4 : Emitter2 5 : Base2 6 : Base1 SANYO : MCP6 0.2 0.9 3 2 hFE -- IC VCE=5V Gain-Bandwidth Product, f T -- GHz 2 f T -- IC VCE=5V 10 7 5 DC Current Gain, hFE 100 7 5 3 2 3 2 10 7 5 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 2 1.0 7 5 7 1.0 2 3 5 7 10 2 3 5 7 100 2 ITR10754 Collector Current, IC -- mA ITR10753 Collector Current, IC -- mA No. A1125-2/6 FH102A 3 2 Cob -- VCB f=1MHz 3 Cre -- VCB f=1MHz Reverse Transfer Capacitance, Cre -- pF 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 2 Output Capacitance, Cob -- pF 1.0 7 5 3 2 1.0 7 5 3 2 0.1 7 5 0.1 7 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Collector-to-Base Voltage, VCB -- V 12 ITR10755 14 2 Forward Transfer Gain, S21e -- dB NF -- IC Collector-to-Base Voltage, VCB -- V S21e -- IC 2 ITR10756 VCE=5V f=1GHz f=1GHz 10 12 Noise Figure, NF -- dB 10 8 8 6 6 4 4 2 2 0 0 3 5 7 1.0 2 3 5 7 10 2 3 5 Collector Current, IC -- mA 600 7 100 2 ITR10757 3 5 7 1.0 V CE =5 V V CE =2 V 2 3 5 7 10 2 3 5 PC -- Ta Collector Current, IC -- mA 7 100 2 ITR10758 When mounted on ceramic substrate (250mm20.8mm) Collector Dissipation, PC -- mW 500 400 300 To t al di ss 200 1u nit ip ati on 100 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- C ITR10759 No. A1125-3/6 FH102A S Parameter f=100MHz, 200 to 2000MHz(200MHz Step) j50 j25 j100 j150 j10 2.0GHz 2.0GHz 2.0GHz 0 10 25 50 100 150 250 500 f=100MHz, 200 to 2000MHz(200MHz Step) 90 120 VCE=5V IC=7mA VCE=5V IC=20mA 0.1GHz 60 j200 j250 150 VCE=2V 0.1GHz I =3mA C 30 VCE=2V IC=3mA VCE=5V IC=20mA 180 0.1GHz 2.0GHz 4 8 12 16 20 0 --j10 0.1GHz 0.1GHz --j250 0.1GHz --j200 --j150 --j100 --150 --30 --j25 VCE=5V IC=7mA --j50 --120 ITR10760 --60 --90 ITR10761 f=100MHz, 200 to 2000MHz(200MHz Step) 90 120 VCE=5V IC=20mA VCE=5V IC=7mA f=100MHz, 200 to 2000MHz(200MHz Step) 2.0GHz 60 2.0GHz 2.0GHz 30 VCE=2V IC=3mA j50 j25 j100 j150 j10 j200 j250 150 180 0.1GHz 0.04 0.08 0.12 0.16 0.2 0 0 10 25 50 100 150 250 500 2.0GHz --j10 --150 --30 VCE=5V IC=7mA VCE=5V IC=20mA 0.1GHz --j250 --j200 --j150 --j100 VCE=2V IC=3mA --j25 --120 --90 --60 ITR10762 --j50 ITR10763 No. A1125-4/6 FH102A S Parameters (Common emitter) VCE=5V, IC=7mA, ZO=50 Freq(MHz) 100 200 400 600 800 1000 1200 1400 1600 1800 2000 S11 0.720 0.612 0.497 0.456 0.440 0.436 0.434 0.433 0.433 0.434 0.439 S11 --46.0 --80.9 --121.3 --143.5 --157.6 --167.5 --176.1 176.6 170.9 165.0 159.6 S21 17.973 13.927 8.656 6.080 4.725 3.864 3.258 2.847 2.329 2.252 2.057 S21 148.5 127.3 105.0 92.8 84.3 77.0 70.3 64.5 57.4 54.2 49.2 S12 0.030 0.047 0.066 0.079 0.094 0.110 0.126 0.143 0.160 0.178 0.197 S12 68.5 57.1 51.3 52.9 55.4 56.8 57.9 58.4 58.9 58.6 58.1 S22 0.880 0.697 0.479 0.382 0.339 0.323 0.312 0.304 0.296 0.293 0.294 S22 --23.6 --37.6 --47.6 --50.5 --51.8 --53.4 --55.8 --58.3 --62.0 --65.0 --68.1 VCE=5V, IC=20mA, ZO=50 Freq(MHz) 100 200 400 600 800 1000 1200 1400 1600 1800 2000 S11 0.481 0.420 0.391 0.386 0.381 0.382 0.385 0.388 0.390 0.391 0.394 S11 --78.8 --119.2 --151.6 --166.4 --175.9 178.2 172.1 166.7 162.1 156.7 152.1 S21 29.795 19.008 10.416 7.084 5.407 4.401 3.701 3.217 2.839 2.534 2.319 S21 132.9 112.2 95.4 86.6 80.1 74.1 68.5 63.6 58.8 54.3 50.1 S12 0.022 0.033 0.052 0.071 0.092 0.114 0.134 0.156 0.176 0.197 0.219 S12 63.9 60.8 64.7 67.2 68.4 67.8 66.8 65.6 64.0 62.4 60.6 S22 0.707 0.470 0.296 0.236 0.213 0.208 0.204 0.202 0.199 0.197 0.197 S22 --38.2 --51.1 --55.3 --56.1 --56.6 --57.9 --60.7 --63.5 --67.9 --71.2 --74.2 VCE=2V, IC=3mA, ZO=50 Freq(MHz) 100 200 400 600 800 1000 1200 1400 1600 1800 2000 S11 0.858 0.782 0.653 0.588 0.557 0.543 0.536 0.533 0.527 0.525 0.528 S11 --32.4 --60.7 --101.1 --126.5 --143.7 --156.3 --166.8 --175.5 177.0 170.3 163.8 S21 9.413 8.187 5.855 4.337 3.444 2.871 2.446 2.145 1.904 1.714 1.564 S21 157.2 138.5 113.8 98.4 87.7 78.5 70.5 63.5 57.1 51.7 45.9 S12 0.040 0.070 0.101 0.114 0.122 0.130 0.137 0.146 0.155 0.168 0.183 S12 72.6 59.2 44.5 39.1 38.0 38.6 40.3 42.5 45.0 47.3 49.2 S22 0.945 0.833 0.637 0.515 0.454 0.426 0.407 0.393 0.382 0.379 0.378 S22 --16.5 --29.3 --43.2 --50.0 --53.8 --57.1 --60.3 --63.8 --68.0 --72.0 --75.8 No. A1125-5/6 FH102A SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of June, 2008. Specifications and information herein are subject to change without notice. PS No. A1125-6/6 |
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