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| Freescale Semiconductor Technical Data MRF6S9130HR3/HSR3 replaced by MRFE6S9130HR3/HSR3. Refer to Device Migration PCN12895 for more details. Document Number: MRF6S9130H Rev. 5, 8/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA, GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier applications. * Typical Single - Carrier N - CDMA Performance @ 880 MHz: VDD = 28 Volts, IDQ = 950 mA, Pout = 27 Watts Avg., Full Frequency Band, IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain -- 19.2 dB Drain Efficiency -- 30.5% ACPR @ 750 kHz Offset -- - 48.1 dBc in 30 kHz Bandwidth GSM Application * Typical GSM Performance: VDD = 28 Volts, IDQ = 950 mA, Pout = 130 Watts, Full Frequency Band (921 - 960 MHz) Power Gain -- 18 dB Drain Efficiency -- 63% GSM EDGE Application * Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 950 mA, Pout = 56 Watts Avg., Full Frequency Band (921 - 960 MHz) Power Gain -- 18.5 dB Drain Efficiency -- 44% Spectral Regrowth @ 400 kHz Offset = - 63 dBc Spectral Regrowth @ 600 kHz Offset = - 75 dBc EVM -- 1.5% rms * Capable of Handling 10:1 VSWR, @ 28 Vdc, 880 MHz, 130 Watts CW Output Power Features * Characterized with Series Equivalent Large - Signal Impedance Parameters * Internally Matched for Ease of Use * Qualified Up to a Maximum of 32 VDD Operation * Integrated ESD Protection * RoHS Compliant * In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. Table 1. Maximum Ratings Rating Drain- Source Voltage Gate- Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) MRF6S9130HR3 MRF6S9130HSR3 880 MHz, 27 W AVG., 28 V SINGLE N - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 1 NI - 780 MRF6S9130HR3 CASE 465A - 06, STYLE 1 NI - 780S MRF6S9130HSR3 Symbol VDSS VGS Tstg TC TJ Symbol RJC Value - 0.5, +68 - 0.5, +12 - 65 to +150 150 225 Value (2,3) 0.45 0.51 Unit Vdc Vdc C C C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80C, 130 W CW Case Temperature 75C, 27 W CW Unit C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. (c) Freescale Semiconductor, Inc., 2005 - 2006, 2008. All rights reserved. MRF6S9130HR3 MRF6S9130HSR3 1 RF Device Data Freescale Semiconductor LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08 LIFETIME BUY Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1A (Minimum) A (Minimum) IV (Minimum) Table 4. Electrical Characteristics (TC = 25C unless otherwise noted) Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IDSS IDSS IGSS -- -- -- -- -- -- 10 1 1 Adc Adc Adc Symbol Min Typ Max Unit LIFETIME BUY On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 400 Adc) VGS(th) VGS(Q) VDS(on) 1 2 -- 2.1 2.9 0.22 3 4 0.5 Vdc Vdc Vdc Gate Quiescent Voltage (VDD = 28 Vdc, ID = 950 mAdc, Measured in Functional Test) Drain- Source On - Voltage (VGS = 10 Vdc, ID = 2.74 Adc) Output Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Reverse Transfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Dynamic Characteristics (1) Coss Crss -- -- 66 1.6 -- -- pF pF Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 950 mA, Pout = 27 W Avg. N - CDMA, f = 880 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ 750 kHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF Power Gain Gps D ACPR IRL 18 29 -- -- 19.2 30.5 - 48.1 - 30 21 -- - 46 -9 dB % dBc dB Drain Efficiency Adjacent Channel Power Ratio Input Return Loss Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 950 mA, Pout = 56 W Avg., 921 MHz LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08 B2 VBIAS + C7 RF INPUT C6 B1 L2 L1 Z4 Z5 Z6 Z7 Z8 C8 C9 C10 C11 Z9 Z10 Z11 Z12 Z13 + + + + VSUPPLY C14 C15 C16 C17 C18 C19 Z14 Z15 Z16 C13 C12 Z17 Z1 C1 Z2 Z3 C2 Z1 Z2 Z3 Z4 Z5 Z6, Z11 C3 C4 Z7 Z8 Z9 Z10 Z12 Z13 C5 DUT 0.383 x 0.080 Microstrip 1.250 x 0.080 Microstrip 0.190 x 0.220 Microstrip 0.127 x 0.220 Microstrip 0.173 x 0.220 Microstrip 0.200 x 0.220 x 0.620 Taper 0.220 x 0.630 Microstrip 0.077 x 0.630 Microstrip 0.146 x 0.630 Microstrip 0.152 x 0.630 Microstrip 0.184 x 0.220 Microstrip 0.261 x 0.220 Microstrip Z14 Z15 Z16 Z17 PCB 0.045 x 0.220 Microstrip 0.755 x 0.080 Microstrip 0.496 x 0.080 Microstrip 0.384 x 0.080 Microstrip Arlon CuClad 250GX - 0300- 55- 22, 0.030, r = 2.55 Figure 1. MRF6S9130HR3(SR3) Test Circuit Schematic Table 5. MRF6S9130HR3(SR3) Test Circuit Component Designations and Values Part Description Ferrite Beads, Short 47 pF Chip Capacitors 8.2 pF Chip Capacitor 0.8- 8.0 pF Variable Capacitors, Gigatrim 12 pF Chip Capacitors 20 K pF Chip Capacitor 10 F, 35 V Tantalum Chip Capacitors 10 pF Chip Capacitors 11 pF Chip Capacitor 0.6- 4.5 pF Variable Capacitor, Gigatrim 0.56 F, 50 V Chip Capacitor 470 F, 63 V Electrolytic Capacitor 12.5 nH Inductors Part Number 2743019447 ATC100B470JT500XT ATC100B8R2BT500XT 27291SL ATC100B120JT500XT ATC200B203KT50XT T491D106K035AT ATC100B7R5JT500XT ATC100B110JT500XT 27271SL C1825C564J5GAC EKME630ELL471MK25S A04T- 5 Manufacturer Fair Rite ATC ATC Johanson ATC ATC Kemet ATC ATC Johanson Kemet United Chemi - Con Coilcraft B1, B2 C1, C13, C14 C2 C3, C11 C4, C5 C6 C7, C16, C17, C18 C8, C9 C10 C12 C15 C19 L1, L2 MRF6S9130HR3 MRF6S9130HSR3 RF Device Data Freescale Semiconductor 3 LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08 RF OUTPUT LIFETIME BUY C19 B2 C7 C6 C16 C17 C18 B1 C4 L1 C8 L2 C15 C14 900 MHz Rev 02 C10 C1 CUT OUT AREA C2 C3 C5 C12 C9 C11 C13 Figure 2. MRF6S9130HR3(SR3) Test Circuit Component Layout MRF6S9130HR3 MRF6S9130HSR3 4 RF Device Data Freescale Semiconductor LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08 LIFETIME BUY TYPICAL CHARACTERISTICS 20 19.5 19 Gps, POWER GAIN (dB) 18.5 18 17.5 17 16.5 16 15.5 15 840 850 860 870 880 890 900 910 f, FREQUENCY (MHz) ACPR D Gps IRL VDD = 28 Vdc, Pout = 27 W (Avg.) IDQ = 950 mA, N-CDMA IS-95 Pilot, Sync, Paging, Traffic Codes 8 Through 13 34 D, DRAIN EFFICIENCY (%) 30 28 26 -44 -5 ACPR (dBc) -15 -25 -35 -45 -55 -46 -48 -50 -52 -54 920 LIFETIME BUY Figure 3. Single - Carrier N - CDMA Broadband Performance @ Pout = 27 Watts Avg. 20 19.5 19 Gps, POWER GAIN (dB) 18.5 18 17.5 17 16.5 16 ACPR 15.5 15 840 850 860 870 880 890 900 910 f, FREQUENCY (MHz) D Gps IRL VDD = 28 Vdc, Pout = 54 W (Avg.) IDQ = 950 mA, N-CDMA IS-95 Pilot, Sync Paging, Traffic Codes 8 Through 13 47 44 41 38 35 -34 -36 -38 -40 -42 -44 920 ACPR (dBc) D, DRAIN EFFICIENCY (%) -5 -10 -15 -20 -25 -30 Figure 4. Single - Carrier N - CDMA Broadband Performance @ Pout = 54 Watts Avg. 20 1100 mA 950 mA 18 700 mA 17 500 mA 16 VDD = 28 Vdc, f1 = 878.75 MHz, f2 = 881.25 MHz Two-Tone Measurements, 2.5 MHz Tone Spacing 15 1 10 100 400 Pout, OUTPUT POWER (WATTS) PEP IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) IDQ = 1400 mA 19 -10 VDD = 28 Vdc, f1 = 878.75 MHz, f2 = 881.25 MHz Two-Tone Measurements, 2.5 MHz Tone Spacing -20 -30 IDQ = 500 mA 700 mA -40 -50 1100 mA -60 1 10 950 mA 100 1400 mA 400 Pout, OUTPUT POWER (WATTS) PEP Figure 5. Two - Tone Power Gain versus Output Power Figure 6. Third Order Intermodulation Distortion versus Output Power MRF6S9130HR3 MRF6S9130HSR3 RF Device Data Freescale Semiconductor 5 LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08 32 Gps, POWER GAIN (dB) IRL, INPUT RETURN LOSS (dB) IRL, INPUT RETURN LOSS (dB) TYPICAL CHARACTERISTICS IMD, INTERMODULATION DISTORTION (dBc) 0 -10 -20 -30 5th Order -40 -50 -60 0.1 7th Order VDD = 28 Vdc, Pout = 130 W (PEP), IDQ = 950 mA Two-Tone Measurements (f1 + f2)/2 = Center Frequency of 880 MHz 3rd Order 56 55 Pout, OUTPUT POWER (dBm) 54.5 54 53.5 53 52.5 52 P3dB = 52.54 dBm (179.47 W) P1dB = 51.8 dBm (151.36 W) Actual 1 10 100 51.5 VDD = 28 Vdc, IDQ = 950 mA 51 Pulsed CW, 8 sec(on), 1 msec(off) 50.5 f = 880 MHz 50 31 31.5 32 32.5 33 33.5 34 34.5 35 35.5 36 36.5 37 Pin, INPUT POWER (dBm) TWO-TONE SPACING (MHz) LIFETIME BUY Figure 7. Intermodulation Distortion Products versus Tone Spacing 60 50 40 30 20 10 0 1 10 Pout, OUTPUT POWER (WATTS) AVG. Gps VDD = 28 Vdc, IDQ = 950 mA, f = 880 MHz N-CDMA IS-95, Pilot, Sync, Paging Traffic Codes 8 Through 13 -30 -35 Gps, POWER GAIN (dB) -40 ACPR (dBc) -45 -50 ACPR -55 -60 100 150 20 19 18 17 16 15 14 13 1 Figure 8. Pulsed CW Output Power versus Input Power 70 60 50 40 30 20 D 10 Pout, OUTPUT POWER (WATTS) CW VDD = 28 Vdc IDQ = 950 mA f = 880 MHz 100 10 0 300 D Figure 9. Single - Carrier N - CDMA ACPR, Power Gain and Drain Efficiency versus Output Power 20 19.5 19 Gps, POWER GAIN (dB) 18.5 18 17.5 17 16.5 16 15.5 15 14.5 14 0 50 100 150 Figure 10. Power Gain and Drain Efficiency versus CW Output Power 32 V 28 V VDD = 24 V IDQ = 950 mA f = 880 MHz 200 250 Pout, OUTPUT POWER (WATTS) CW Figure 11. Power Gain versus Output Power MRF6S9130HR3 MRF6S9130HSR3 6 RF Device Data Freescale Semiconductor D, DRAIN EFFICIENCY (%) Gps LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08 55.5 Ideal D, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) TYPICAL CHARACTERISTICS 108 MTTF (HOURS) 107 106 105 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (C) LIFETIME BUY This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 27 W Avg., and D = 30.5%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 12. MTTF versus Junction Temperature N - CDMA TEST SIGNAL 100 10 1 0.1 0.01 0.001 0.0001 0 2 4 6 8 10 PEAK-TO-AVERAGE (dB) IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carriers. ACPR Measured in 30 kHz Bandwidth @ 750 kHz Offset. ALT1 Measured in 30 kHz Bandwidth @ 1.98 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. (dB) -10 -20 -30 -40 -50 -60 -70 -80 -90 -100 -110 -3.6 -2.9 -2.2 -1.5 -0.7 0 0.7 1.5 2.2 2.9 3.6 1.2288 MHz Channel BW ......... ....... .... .... ... .... .. .. . .............. .............. ... . . . . . . . . . . . . . . . . . . . . . . . -ALT1 in 30 kHz +ALT1 in 30 kHz . . . . Integrated BW Integrated BW .... . .... ............ ... . .... .. ... . . ..... ... ... . ...... .. .... ....... .. ............ . ..... .. .... ......... ......... ... ..... ...... . ...... .... . .. ..... .... ..... ...... .. . . .... . ...... ......... ....... .... . .... .. . .. . . ... . ... ..... ..... .. ..... .. -ACPR in 30 kHz . ... +ACPR in 30 kHz . ......... .... . ..... .. ............ ............ ............. ...... . Integrated BW Integrated BW ... .. ........ ........... .. .......... .... .... . ...... ... . . Figure 13. Single - Carrier CCDF N - CDMA f, FREQUENCY (MHz) Figure 14. Single - Carrier N - CDMA Spectrum MRF6S9130HR3 MRF6S9130HSR3 RF Device Data Freescale Semiconductor 7 LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08 PROBABILITY (%) f = 910 MHz Zload Zo = 2 f = 850 MHz f = 910 MHz Zsource f = 850 MHz VDD = 28 Vdc, IDQ = 950 mA, Pout = 27 W Avg. f MHz 850 865 880 895 910 Zsource 0.89 - j1.18 0.87 - j1.03 0.85 - j0.89 0.83 - j0.75 0.84 - j0.64 Zload 1.50 - j0.09 1.52 + j0.11 1.55 + j0.31 1.60 + j0.51 1.68 + j0.71 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 15. Series Equivalent Source and Load Impedance MRF6S9130HR3 MRF6S9130HSR3 8 RF Device Data Freescale Semiconductor LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08 LIFETIME BUY PACKAGE DIMENSIONS B G 1 2X Q bbb M TA M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF 3 (FLANGE) B 2 K D bbb M TA M B M M (INSULATOR) R M (LID) bbb N H (LID) M TA B M ccc M TA M B M S M (INSULATOR) ccc C TA M B M aaa M TA M B M F E A (FLANGE) A T SEATING PLANE CASE 465 - 06 ISSUE G NI - 780 MRF6S9130HR3 STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE 4X U (FLANGE) B 1 4X Z (LID) (FLANGE) B 2 2X K D bbb M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 --- 0.040 --- 0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 --- 1.02 --- 0.76 0.127 REF 0.254 REF 0.381 REF TA M B M N (LID) R M (LID) ccc M H 3 TA M B M ccc aaa M TA TA M B B M (INSULATOR) S M (INSULATOR) M bbb C M TA B M M M F T SEATING PLANE E A (FLANGE) A CASE 465A - 06 ISSUE H NI - 780S MRF6S9130HSR3 STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE MRF6S9130HR3 MRF6S9130HSR3 RF Device Data Freescale Semiconductor 9 PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes * AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Revision 5 Date Aug. 2008 Description * Listed replacement part and Device Migration notification reference number, p. 1 * Removed Lower Thermal Resistance and Low Gold Plating bullets from Features section as functionality is standard, p. 1 * Removed Total Device Dissipation from Max Ratings table as data was redundant (information already provided in Thermal Characteristics table), p. 1 * Operating Junction Temperature increased from 200C to 225C in Maximum Ratings table and related "Continuous use of maximum temperature will affect MTTF" footnote added, p. 1 * Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q), and added "Measured in Functional Test", On Characteristics table, p. 2 * Removed Forward Transconductance from On Characteristics table as it no longer provided usable information, p. 2 * Updated PCB information to show more specific material details, Fig. 1, Test Circuit Schematic, p. 3 * Updated Part Numbers in Table 5, Component Designations and Values, to latest RoHS compliant part numbers, p. 3 * Removed lower voltage tests from Fig. 11, Power Gain versus Output Power, due to fixed tuned fixture limitations, p. 6 * Replaced Fig. 12, MTTF versus Junction Temperature with updated graph. Removed Amps2 and listed operating characteristics and location of MTTF calculator for device, p. 7 * Added Product Documentation and Revision History, p. 10 MRF6S9130HR3 MRF6S9130HSR3 10 RF Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1 - 800- 521- 6274 or +1 - 480- 768- 2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor China Ltd. Exchange Building 23F No. 118 Jianguo Road Chaoyang District Beijing 100022 China +86 10 5879 8000 support.asia@freescale.com For Literature Requests Only: Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1 - 800- 441- 2447 or +1 - 303- 675- 2140 Fax: +1 - 303- 675- 2150 LDCForFreescaleSemiconductor@hibbertgroup.com Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals", must be validated for each customer application by customer's technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. (c) Freescale Semiconductor, Inc. 2005 - 2006, 2008. All rights reserved. MRF6S9130HR3 MRF6S9130HSR3 Document Number: RF Device Data MRF6S9130H Rev. 5, 8/2008 Freescale Semiconductor 11 |
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