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| TIP29/TIP29A/TIP29B/TIP29C -- NPN Epitaxial Silicon Transistor July 2008 TIP29/TIP29A/TIP29B/TIP29C NPN Epitaxial Silicon Transistor Features * Complementary to TIP30/TIP30A/TIP30B/TIP30C 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings TC=25C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter : TIP29 : TIP29A : TIP29B : TIP29C Value 40 60 80 100 40 60 80 100 5 1 3 0.4 30 2 150 - 65 ~ 150 Units V V V V V V V V V A A A W W C C VCEO Collector-Emitter Voltage : TIP29 : TIP29A : TIP29B : TIP29C Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25C) Collector Dissipation (Ta=25C) VEBO IC ICP IB PC TJ TSTG Junction Temperature Storage Temperature (c) 2008 Fairchild Semiconductor Corporation TIP29/TIP29A/TIP29B/TIP29C Rev. A www.fairchildsemi.com 1 TIP29/TIP29A/TIP29B/TIP29C -- NPN Epitaxial Silicon Transistor Electrical Characteristics TC=25C unless otherwise noted Symbol VCEO(sus) Parameter *Collector-Emitter Sustaining Voltage : TIP29 : TIP29A : TIP29B : TIP29C Collector Cut-off Current : TIP29/29A : TIP29B/29C Collector Cut-off Current : TIP29 : TIP29A : TIP29B : TIP29C IEBO hFE Emitter Cut-off Current *DC Current Gain VCE = 40V, VEB = 0 VCE = 60V, VEB = 0 VCE = 80V, VEB = 0 VCE = 100V, VEB = 0 VEB = 5V, IC = 0 VCE = 4V, IC = 0.2A VCE = 4V, IC = 1A IC = 1A, IB = 125mA VCE = 4V, IC = 1A VCE = 10V, IC = 200mA 3.0 40 15 200 200 200 200 1.0 A A A A mA Test Condition Min. Max. Units IC = 30mA, IB = 0 40 60 80 100 V V V V ICEO VCE = 30V, IB = 0 VCE = 60V, IB = 0 0.3 0.3 mA mA ICES 75 0.7 1.3 V V MHz VCE(sat) VBE(sat) fT *Collector-Emitter Saturation Voltage *Base-Emitter Saturation Voltage Current Gain Bandwidth Product * Pulse Test: PW300ms, Duty Cycle2% (c) 2008 Fairchild Semiconductor Corporation TIP29/TIP29A/TIP29B/TIP29C Rev. A www.fairchildsemi.com 2 TIP29/TIP29A/TIP29B/TIP29C -- NPN Epitaxial Silicon Transistor Typical Characteristics VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE 1000 10000 VCE = 4V IC/IB = 10 hFE, DC CURRENT GAIN 100 1000 VBE(sat) 10 100 VCE(sat) 1 1 10 100 1000 10000 10 1 10 100 1000 10000 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 10 40 35 IC[A], COLLECTOR CURRENT IC(MAX) (PULSE) PC[W], POWER DISSIPATION 30 25 20 15 10 5 0 s 1m IC(MAX) (DC) 1 s 5m DC TIP29 VCEO MAX. TIP29A VCEO MAX. TIP29B VCEO MAX. TIP29C VCEO MAX. 0.1 10 100 0 25 50 o 75 100 125 150 175 200 VCE[V], COLLECTOR-EMITTER VOLTAGE TC[ C], CASE TEMPERATURE Figure 3. Safe Operating Area Figure 4. Power Derating (c) 2008 Fairchild Semiconductor Corporation TIP29/TIP29A/TIP29B/TIP29C Rev. A www.fairchildsemi.com 3 TIP29/TIP29A/TIP29B/TIP29C -- NPN Epitaxial Silicon Transistor Mechanical Dimensions TO220 (c) 2008 Fairchild Semiconductor Corporation TIP29/TIP29A/TIP29B/TIP29C Rev. A www.fairchildsemi.com 4 TIP29/TIP29A/TIP29B/TIP29C NPN Epitaxial Silicon Transistor (c) 2008 Fairchild Semiconductor Corporation TIP29/TIP29A/TIP29B/TIP29C Rev. A www.fairchildsemi.com 5 |
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