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Freescale Semiconductor Technical Data
Document Number: MRF6VP11KH Rev. 6, 12/2009
RF Power Field Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFET
Designed primarily for pulsed wideband applications with frequencies up to 150 MHz. Device is unmatched and is suitable for use in industrial, medical and scientific applications. * Typical Pulsed Performance at 130 MHz: VDD = 50 Volts, IDQ = 150 mA, Pout = 1000 Watts Peak (200 W Avg.), Pulse Width = 100 sec, Duty Cycle = 20% Power Gain -- 26 dB Drain Efficiency -- 71% * Capable of Handling 10:1 VSWR, @ 50 Vdc, 130 MHz, 1000 Watts Peak Power Features * Characterized with Series Equivalent Large-Signal Impedance Parameters * CW Operation Capability with Adequate Cooling * Qualified Up to a Maximum of 50 VDD Operation * Integrated ESD Protection * Designed for Push-Pull Operation * Greater Negative Gate-Source Voltage Range for Improved Class C Operation * RoHS Compliant * In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
MRF6VP11KHR6
1.8-150 MHz, 1000 W, 50 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFET
CASE 375D-05, STYLE 1 NI-1230 PART IS PUSH-PULL
RFinA/VGSA 3
1 RFoutA/VDSA
RFinB/VGSB 4
2 RFoutB/VDSB
(Top View)
Figure 1. Pin Connections Table 1. Maximum Ratings
Rating Drain-Source Voltage Gate-Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol VDSS VGS Tstg TC TJ Value -0.5, +110 -6.0, +10 -65 to +150 150 200 Unit Vdc Vdc C C C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 80C, 1000 W Pulsed, 100 sec Pulse Width, 20% Duty Cycle Case Temperature 67C, 1000 W CW, 100 MHz Symbol ZJC RJC Value (1,2) 0.03 0.13 Unit C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.
(c) Freescale Semiconductor, Inc., 2008-2009. All rights reserved.
MRF6VP11KHR6 1
RF Device Data Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22-A114) Machine Model (per EIA/JESD22-A115) Charge Device Model (per JESD22-C101) Class 2 (Minimum) A (Minimum) IV (Minimum)
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted)
Characteristic Off Characteristics
(1)
Symbol
Min
Typ
Max
Unit
Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) Drain-Source Breakdown Voltage (ID = 300 mA, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 50 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 100 Vdc, VGS = 0 Vdc) On Characteristics Gate Threshold Voltage (1) (VDS = 10 Vdc, ID = 1600 Adc) Gate Quiescent Voltage (2) (VDD = 50 Vdc, ID = 150 mAdc, Measured in Functional Test) Drain-Source On-Voltage (1) (VGS = 10 Vdc, ID = 4 Adc) Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 50 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 50 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Input Capacitance (VDS = 50 Vdc, VGS = 0 Vdc 30 mV(rms)ac @ 1 MHz)
IGSS V(BR)DSS IDSS IDSS
-- 110 -- --
-- -- -- --
10 -- 100 5
Adc Vdc Adc mA
VGS(th) VGS(Q) VDS(on)
1 1.5 --
1.63 2.2 0.28
3 3.5 --
Vdc Vdc Vdc
Crss Coss Ciss
-- -- --
3.3 147 506
-- -- --
pF pF pF
Functional Tests (2) (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 150 mA, Pout = 1000 W Peak (200 W Avg.), f = 130 MHz, 100 sec Pulse Width, 20% Duty Cycle Power Gain Drain Efficiency Input Return Loss 1. Each side of device measured separately. 2. Measurement made with device in push-pull configuration. Gps D IRL 24 69 -- 26 71 -16 28 -- -9 dB % dB
MRF6VP11KHR6 2 RF Device Data Freescale Semiconductor
VBIAS + C1 + C2 +
B1
R2 L1 R1 L3 C4 C5 C6 C7 C8 C9 C10 C11 C21 Z10 C13 C14 C15 + +
VSUPPLY +
C3
C16 C17 C18 C19 C20
Z8 Z4 RF INPUT Z6
Z12
Z14
Z16 RF OUTPUT
Z1
Z2 L2
Z3 J1 Z5 C12 T1 C22 Z7 Z9 Z11 Z13 Z15 Z17 T2 DUT C23 C24 C25 J2
Z18
Z19
C26
Z1 Z2* Z3* Z4, Z5 Z6, Z7, Z8, Z9 Z10, Z11 Z12, Z13
0.175 x 0.082 Microstrip 1.461 x 0.082 Microstrip 0.080 x 0.082 Microstrip 0.133 x 0.193 Microstrip 0.500 x 0.518 Microstrip 0.102 x 0.253 Microstrip 0.206 x 0.253 Microstrip
Z14, Z15 Z16*, Z17* Z18 Z19 PCB
0.116 x 0.253 Microstrip 0.035 x 0.253 Microstrip 0.275 x 0.082 Microstrip 0.845 x 0.082 Microstrip Arlon CuClad 250GX-0300-55-22, 0.030, r = 2.55
*Line length includes microstrip bends.
Figure 2. MRF6VP11KHR6 Test Circuit Schematic
Table 5. MRF6VP11KHR6 Test Circuit Component Designations and Values
Part B1 C1 C2 C3 C4, C9, C17 C5, C16 C6, C15 C7 C8 C10, C11, C13, C14 C12 C18, C19, C20 C21, C22 C23 C24, C25 C26 J1, J2 L1 L2 L3* R1 R2 T1 T2 *L3 is wrapped around R2. Description 95 , 100 MHz Long Ferrite Bead 47 F, 50 V Electrolytic Capacitor 22 F, 35 V Tantalum Capacitor 10 F, 35 V Tantalum Capacitor 10K pF Chip Capacitors 20K pF Chip Capacitors 0.1 F, 50 V Chip Capacitors 2.2 F, 50 V Chip Capacitor 0.22 F, 100 V Chip Capacitor 1000 pF Chip Capacitors 18 pF Chip Capacitor 470 F, 63 V Electrolytic Capacitors 47 pF Chip Capacitors 75 pF Chip Capacitor 100 pF Chip Capacitors 33 pF Chip Capacitor Jumpers from PCB to T1 and T2 82 nH Inductor 47 nH Inductor 10 Turns, #18 AWG Inductor, Hand Wound 1 K, 1/4 W Carbon Leaded Resistor 20 , 3 W Chip Resistor Balun Balun Part Number 2743021447 476KXM050M T491X226K035AT T491D106K035AT ATC200B103KT50XT ATC200B203KT50XT CDR33BX104AKYS C1825C225J5RAC C1825C223K1GAC ATC100B102JT50XT ATC100B180JT500XT MCGPR63V477M13X26-RH ATC100B470JT500XT ATC100B750JT500XT ATC100B101JT500XT ATC100B330JT500XT Copper Foil 1812SMS-82NJLC 1812SMS-47NJLC Copper Wire MCCFR0W4J0102A50 CPF320R000FKE14 TUI-9 TUO-4 Multicomp Vishay Comm Concepts Comm Concepts CoilCraft CoilCraft Manufacturer Fair-Rite Illinois Cap Kemet Kemet ATC ATC Kemet Kemet Kemet ATC ATC Multicomp ATC ATC ATC ATC
MRF6VP11KHR6 RF Device Data Freescale Semiconductor 3
C1
C19 C17 C16 C15
B1 L1
C4 C5 C6
C18
C2 C3 C7 C8 C9 C11
C20 C14 L3, R2*
R1 C10 J1 C21 T1 C24
C13 T2 C25 J2
L2 C12
CUT OUT AREA
C23 C22
C26
MRF6VP11KH Rev. 3
* L3 is wrapped around R2.
Figure 3. MRF6VP11KHR6 Test Circuit Component Layout
MRF6VP11KHR6 4 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
1000 Ciss Coss 100 Measured with 30 mV(rms)ac @ 1 MHz VGS = 0 Vdc ID, DRAIN CURRENT (AMPS) 100
C, CAPACITANCE (pF)
TJ = 200C TJ = 175C 10 TJ = 150C
10
Crss
TC = 25C 1 0 10 20 30 40 50 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 1 1 10 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 100
Note: Each side of device measured separately. Figure 4. Capacitance versus Drain-Source Voltage
27 26 Gps, POWER GAIN (dB) 25 24 23 22 21 20 10 VDD = 50 Vdc, IDQ = 150 mA, f = 130 MHz Pulse Width = 100 sec, Duty Cycle = 20% 100 Pout, OUTPUT POWER (WATTS) PULSED 1000 Gps 80 70 D, DRAIN EFFICIENCY (%) Pout, OUTPUT POWER (dBm) 60 50 40 30 20 65 64 63
Note: Each side of device measured separately. Figure 5. DC Safe Operating Area
P3dB = 61.23 dBm (1327.39 W) P1dB = 60.57 dBm (1140.24 W)
Ideal
62 61 60 59 58 57 56 30 31 32 33 VDD = 50 Vdc, IDQ = 150 mA, f = 130 MHz Pulse Width = 100 sec, Duty Cycle = 20% 34 35 36 37 38 39 Actual
D
10 2000
Pin, INPUT POWER (dBm) PULSED
Figure 6. Pulsed Power Gain and Drain Efficiency versus Output Power
32 IDQ = 6000 mA Gps, POWER GAIN (dB) Gps, POWER GAIN (dB) 28 3600 mA 1500 mA 750 mA 24 150 mA 20 VDD = 50 Vdc, f = 130 MHz Pulse Width = 100 sec, Duty Cycle = 20% 16 10 100 Pout, OUTPUT POWER (WATTS) PULSED 1000 2000 12 0 375 mA 24 28
Figure 7. Pulsed Output Power versus Input Power
20 VDD = 30 V 16 IDQ = 150 mA, f = 130 MHz Pulse Width = 100 sec Duty Cycle = 20% 200 400 600 800 1000 1200 1400 1600 35 V 40 V 45 V 50 V
Pout, OUTPUT POWER (WATTS) PULSED
Figure 8. Pulsed Power Gain versus Output Power
Figure 9. Pulsed Power Gain versus Output Power
MRF6VP11KHR6 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
65 TC = -30_C 25_C 55 VDD = 50 Vdc IDQ = 150 mA f = 130 MHz Pulse Width = 100 sec Duty Cycle = 20% 25 30 35 40 45 Gps, POWER GAIN (dB) 60 85_C 27 TC = -30_C 26 25 24 Gps 23 22 21 20 10 D 40 VDD = 50 Vdc IDQ = 150 mA f = 130 MHz Pulse Width = 100 sec Duty Cycle = 20% 1000 30 20 25_C 85_C 50 70 60 D, DRAIN EFFICIENCY (%) Pout, OUTPUT POWER (dBm) 80
50
45 20
100 Pout, OUTPUT POWER (WATTS) PULSED
10 2000
Pin, INPUT POWER (dBm) PULSED
Figure 10. Pulsed Output Power versus Input Power
0.2 0.18 ZJC, THERMAL IMPEDANCE (C/W) 0.16 0.14 0.12 0.1 0.08 0.06 0.04 0.02 0 0.00001 0.0001 0.001 0.01 D = 0.1 D = 0.5 D = 0.7
Figure 11. Pulsed Power Gain and Drain Efficiency versus Output Power
PD
t1 t2
D = Duty Factor = t1/t2 t1 = Pulse Width t2 = Pulse Period TJ = PD * ZJC + TC
0.1
1
10
RECTANGULAR PULSE WIDTH (S)
Figure 12. Maximum Transient Thermal Impedance
108 109
MTTF (HOURS)
106
MTTF (HOURS) 90 110 130 150 170 190 210 230 250
107
108
107
105 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 50 Vdc, Pout = 1000 W CW, and D = 72%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product.
106 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 50 Vdc, Pout = 1000 W Peak, Pulse Width = 100 sec, Duty Cycle = 20%, and D = 71%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product.
Figure 13. MTTF versus Junction Temperature - CW MRF6VP11KHR6 6
Figure 14. MTTF versus Junction Temperature - Pulsed RF Device Data Freescale Semiconductor
f = 130 MHz Zsource
Zo = 10
f = 130 MHz
Zload
VDD = 50 Vdc, IDQ = 150 mA, Pout = 1000 W Peak f MHz 130 Zsource W 1.58 + j6.47 Zload W 4.6 + j1.85
Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration.
Input Matching Network
+
Device Under Test
-
Output Matching Network
Z source Z
+ load
Figure 15. Series Equivalent Source and Load Impedance
MRF6VP11KHR6 RF Device Data Freescale Semiconductor 7
PACKAGE DIMENSIONS
MRF6VP11KHR6 8 RF Device Data Freescale Semiconductor
MRF6VP11KHR6 RF Device Data Freescale Semiconductor 9
PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE
Refer to the following documents to aid your design process. Application Notes * AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices Software * Electromigration MTTF Calculator * RF High Power Model For Software and Tools, do a Part Number search at http://www.freescale.com, and select the "Part Number" link. Go to the Software & Tools tab on the part's Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 0 1 Date Jan. 2008 Apr. 2008 * Initial Release of Data Sheet * Corrected description and part number for the R1 resistor and updated R2 resistor to latest RoHS compliant part number in Table 5, Test Circuit Component Designations and Values, p. 3. * Added Fig. 12, Maximum Transient Thermal Impedance, p. 6 2 3 July 2008 Sept. 2008 * Added MTTF CW graph, Fig. 13, MTTF versus Junction Temperature, p. 6 * Added Note to Fig. 4, Capacitance versus Drain-Source Voltage, to denote that each side of device is measured separately, p. 5 * Updated Fig. 5, DC Safe Operating Area, to clarify that measurement is on a per-side basis, p. 5 * Corrected Fig. 13, MTTF versus Junction Temperature - CW, to reflect the correct die size and increased the MTTF factor accordingly, p. 6 * Corrected Fig. 14, MTTF versus Junction Temperature - Pulsed, to reflect the correct die size and increased the MTTF factor accordingly, p. 6 4 Dec. 2008 * Fig. 15, Series Equivalent Source and Load Impedance, corrected Zsource copy to read "Test circuit impedance as measured from gate to gate, balanced configuration" and Zload copy to read "Test circuit impedance as measured from drain to drain, balanced configuration", p. 7 * Added 1000 W CW thermal data at 100 MHz to Thermal Characteristics table, p. 1 * Changed "EKME630ELL471MK25S" part number to "MCGPR63V477M13X26-RH", changed R1 Description from "1 K, 1/4 W Axial Leaded Resistor" to "1 K, 1/4 W Carbon Leaded Resistor" and "CMF601000R0FKEK" part number to "MCCFR0W4J0102A50", Table 5, Test Circuit Component Designations and Values, p. 3 * Corrected Fig. 13, MTTF versus Junction Temperature - CW, to reflect change in Drain Efficiency from 70% to 72%, p. 6 * Added Electromigration MTTF Calculator and RF High Power Model availability to Product Documentation, Tools and Software, p. 20 6 Dec. 2009 * Device frequency range improved from 10-150 MHz to 1.8-150 MHz, p. 1 * Reporting of pulsed thermal data now shown using the ZJC symbol, Table 2. Thermal Characteristics, p. 1 Description
5
July 2009
MRF6VP11KHR6 10 RF Device Data Freescale Semiconductor
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MRF6VP11KHR6
Document Number: RF Device Data MRF6VP11KH Rev. 6, 12/2009 Freescale Semiconductor
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