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| UNISONIC TECHNOLOGIES CO., LTD 11N40 400 V N-CHANNEL MOSFET DESCRIPTION The 11N40 uses UTC's advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. Power MOSFET FEATURES * RDS(ON) = 0.48 @VGS = 10 V * Ultra low gate charge ( typical 27 nC ) * Low reverse transfer capacitance ( CRSS = typical 20 pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL 2.Drain 11N40L Lead-free: Halogen-free: 11N40G 1.Gate 3.Source ORDERING INFORMATION Normal 11N40-TF3-T Ordering Number Lead Free Plating 11N40L-TF3-T Halogen Free 11N40G-TF3-T Package TO-220F Pin Assignment 1 2 3 G D S Packing Tube www.unisonic.com.tw 1 of 6 QW-R502-219.Aa Copyright (c) 2008 Unisonic Technologies Co., Ltd 11N40 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATING (TC =25, unless otherwise specified) RATINGS UNIT 400 V 30 V 11.4 A 46 A 11.4 A 520 mJ 14.7 4.5 V/ns 147 W PD 1.18 W/ Junction Temperature TJ 150 Storage Temperature TSTG -55 ~ +150 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TC = 25) Pulsed Drain Current (Note 1) Avalanche Current (Note 1) Single Pulsed(Note 2) Avalanche Energy Repetitive(Note 1) Peak Diode Recovery dv/dt (Note 3) Power Dissipation Derate above 25 SYMBOL VDSS VGSS ID IDM IAR EAS EAR dv/dt THERMAL DATA PARAMETER Junction-to- Ambient Junction-to-Case SYMBOL JA JC MIN TYP MAX 62.5 0.85 UNIT /W /W ELECTRICAL CHARACTERISTICS (TJ =25, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Breakdown Voltage Temperature Coefficient ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-Resistance DYNAMIC PARAMETERS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING PARAMETERS Turn-ON Delay Time Turn-ON Rise Time Turn-OFF Delay Time Turn-OFF Fall-Time Total Gate Charge Gate Source Charge Gate Drain Charge SYMBOL BVDSS IDSS IGSS BVDSS/TJ VGS(TH) RDS(ON) CISS COSS CRSS tD(ON) tR tD(OFF) tF QG QGS QGD TEST CONDITIONS VGS =0 V, ID =250 A VDS =400V, VGS =0 V VDS =320V, TC =125C VDS =0 V, VGS = 30 V ID =250 A, Referenced to25C VDS =VGS, ID =250 A VGS = 10 V, ID = 5.7 A 2.0 0.38 1100 180 20 30 100 60 60 27 7.3 12.3 MIN 400 1 10 100 0.42 4.0 0.48 1400 240 30 70 210 130 130 35 TYP MAX UNIT V A nA mV/ V VDS =25V, VGS =0V, f=1MHz pF VDD=200V, ID=11.4A, RGEN =25(Note 4,5) VDS =320V, VGS =10V, ID =11.4A (Note 4,5) ns nC UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 6 QW-R502-219.Aa 11N40 Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS(Cont.) SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD IS=11.4 A,VGS=0V Maximum Continuous Drain-Source IS Diode Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Reverse Recovery Time tRR VGS = 0 V, dIF /dt = 100 A/ s, IS = 11.4 A (Note 4) Reverse Recovery Charge QRR Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. L=7mH, IAS=11.4A, VDD=50V, RG=25, Satarting TJ=25C. 3. ISD 11.4A, di/dt 200A/s, VDD BVDSS, Satarting TJ=25C. 4. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 5. Independent of operating temperature. 1.5 11.4 A 46 240 1.8 ns C V UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 6 QW-R502-219.Aa 11N40 TEST CIRCUIT Preliminary Power MOSFET Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform L VDS BVDSS IAS RD VDD D.U.T. tp tp Time VDD ID(t) VDS(t) 10V Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-219.Aa 11N40 TEST CIRCUIT(Cont.) Preliminary Power MOSFET D.U.T. + VDS - + L RG Driver VGS Same Type as D.U.T. * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test VDD Fig. 1A Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period P.W. D= P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) IRM Body Diode Reverse Current di/dt Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R502-219.Aa 11N40 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-219.Aa |
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