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APTGF165SK60D1G
Buck chopper NPT IGBT Power Module
Q1 4 5 3
VCES = 600V IC = 165A @ Tc = 80C
Application * AC and DC motor control * Switched Mode Power Supplies Features * Non Punch Through (NPT) FAST IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated * Kelvin emitter for easy drive * High level of integration * M5 power connectors Benefits * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * RoHS Compliant
1
2
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25C TC = 80C TC = 25C TC = 25C Tj = 125C Max ratings 600 230 165 400 20 781 400A@420V Unit V A V W
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTGF165SK60D1G - Rev 1
December, 2009
APTGF165SK60D1G
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V VCE = 600V Tj = 25C Tj = 125C Tj = 25C VGE = 15V IC = 200A Tj = 125C VGE = VCE , IC = 4 mA VGE = 20V, VCE = 0V Min Typ Max 250 500 2.45 6.5 400 Unit A V V nA
1.95 2.2 4.5
Dynamic Characteristics
Symbol Characteristic Cies Input Capacitance Cres Reverse Transfer Capacitance QG Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Isc Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn on energy Turn off energy Short Circuit data Test Conditions VGE = 0V, VCE = 25V f = 1MHz VGE=15V, IC=200A VCE=300V Inductive Switching (25C) VGE = 15V VBus = 300V IC = 200A RG = 16 Inductive Switching (125C) VGE = 15V VBus = 300V IC = 200A RG = 16 VGE = 15V Tj = 125C VBus = 300V IC = 200A Tj = 125C RG = 16 VGE 15V ; VBus = 360V tp 10s ; Tj = 125C Min Typ 9000 800 650 150 72 530 40 160 75 550 50 9 8.5 900 mJ Max Unit pF nC
ns
ns
A
Chopper Diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF trr Qrr Err Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery time Reverse Recovery Charge Reverse Recovery Energy IF = 200A VR = 300V IF = 200A VGE = 0V Test Conditions VR=600V Tj = 25C Tj = 125C Tc = 80C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Min 600 Typ Max 100 500 200 1.25 1.2 150 250 13 20 2.9 5.7 1.6 Unit V A A V ns C mJ
December, 2009 2-4 APTGF165SK60D1G - Rev 1
di/dt =3500A/s
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APTGF165SK60D1G
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight For terminals To Heatsink M5 M6 IGBT Diode 4000 -40 -40 -40 2 3 Min Typ Max 0.16 0.30 150 125 125 3.5 5 180 Unit
C/W
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
V C N.m g
D1 Package outline (dimensions in mm)
Typical Performance Curve
Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 70 60 50 40 30 20 10 0 0 50 100 150 IC (A) 200 250 0 0 0.3 0.6 0.9 VF (V) 1.2 1.5
hard switching ZVS VCE=300V D=50% RG=16 TJ=125C TC=75C ZCS
Forward Characteristic of diode 400
300 IF (A)
200
TJ=125C TJ=25C
100
0.35 Thermal Impedance (C/W) 0.3 0.25 0.2 0.15 0.1 0.05
0.3 0.1 0.05 0.9 0.7 0.5
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration Diode
Single Pulse
0 0.00001
0.0001
0.001 0.01 0.1 rectangular Pulse Duration (Seconds)
1
10
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APTGF165SK60D1G - Rev 1
December, 2009
APTGF165SK60D1G
Output Characteristics (VGE=15V) Output Characteristics 400
TJ = 125C VGE=15V VGE=12V
400
TJ=25C
300
IC (A) IC (A)
TJ=125C
300
VGE=20V
200
200
VGE=9V
100
100
0 0 0.5 1 1.5 2 VCE (V) 2.5 3 3.5
0 0 1 2 3 VCE (V) 4 5
400
Transfert Characteristics 20 15 E (mJ) 10 5
TJ=25C
Energy losses vs Collector Current
VCE = 300V VGE = 15V RG = 16 TJ = 125C Eon
300 IC (A)
Eoff
200
TJ=125C
100
Err
0 5 6 7 8 9 10 11 12 VGE (V) Switching Energy Losses vs Gate Resistance 30 25 20 E (mJ) 15 10 5 0 0 20 40 60 Gate Resistance (ohms) 80
Err VCE = 300V VGE =15V IC = 200A TJ = 125C Eon
0 0 100 200 IC (A) 300 400
500 400
Eoff
Reverse Safe Operating Area
IC (A)
300 200 100 0 0 100 200 300 VCE (V) 400 500 600
VGE=15V TJ=125C RG=16
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.18 Thermal Impedance (C/W) 0.15 0.12 0.09 0.06 0.03 0.9 0.7 0.5
IGBT
0.1 0.05 0.0001 Single Pulse 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) 1 10
0 0.00001
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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APTGF165SK60D1G - Rev 1
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