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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD240/A/B/C DESCRIPTION With TO-220C package Complement to type BD239/A/B/C APPLICATIONS For medium power linear and switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings (Ta=25ae ) SYMBOL PARAMETER CONDITIONS BD240 BD240A BD240B VCBO HAN INC Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector-base voltage GE S BD240C BD240 BD240A BD240B BD240C Open emitter EMIC OND TOR UC VALUE -55 -70 -90 -115 -45 -60 UNIT V VCEO Open base -80 -100 Open collector -5 -2 -4 -0.6 TC=25ae 30 150 -65~150 ae ae V VEBO IC ICM IB PC Tj Tstg V A A A W Collector power dissipation Junction temperature Storage temperature Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD240/A/B/C CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER BD240 BD240A VCEO(SUS) Collector-emitter sustaining voltage BD240B BD240C VCEsat VBE Collector-emitter saturation voltage Base-emitter on voltage BD240/A ICEO Collector cut-off current IC=-1 A;IB=-0.2 A IC=-1A ; VCE=-4V VCE=-30V; IB=0 -0.3 VCE=-60V; IB=0 VCE=-45V; VBE=0 VCE=-60V; VBE=0 VCE=-80V; VBE=0 VCE=-100V; VBE=0 VEB=-5V; IC=0 IC=-0.2A ; VCE=-4V IC=-1A ; VCE=-4V 40 15 -1 mA mA IC=-30mA; IB=0 -80 -100 -0.7 -1.3 V V CONDITIONS MIN -45 -60 V TYP. MAX UNIT SYMBOL ICES BD240B/C BD240 BD240A Collector cut-off current HAN INC BD240B SEM GE OND IC TOR UC -0.2 mA BD240C IEBO hFE-1 hFE-2 Emitter cut-off current DC current gain DC current gain 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE BD240/A/B/C SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.10 mm) 3 |
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