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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BDY39 DESCRIPTION *Excellent Safe Operating Area *DC Current Gain: hFE=25-100@IC = 4A *Collector-Emitter Saturation Voltage: VCE(sat)= 0.7V(Max)@ IC = 4A APPLICATIONS *Designed for use in high power AF output stages and in stabilized power supplies. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCER VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation@TC=25 Junction Temperature Storage Temperature w w scs .i w 100 70 60 7 15 22.5 7 115 200 -65~200 VALUE UNIT V V V .cn mi e V A A A PC TJ Tstg W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.5 UNIT /W isc Websitewww.iscsemi.cn 1 INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BDY39 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC=200mA; IB=0 B 60 V VCEV(SUS) Collector-Emitter Sustaining Voltage IC=100mA; VBE= -1.5V 100 V VCER(SUS) Collector-Emitter Sustaining Voltage IC=200mA; RBE=100 70 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A B 0.7 V VBE(on) Base-Emitter On Voltage IC= 4A; VCE= 4V 1.1 V ICEO Collector Cutoff Current VCE= 30V; IB=0 B ICEV Collector Cutoff Current IEBO Emitter Cutoff Current hFE DC Current Gain fT Current Gain-Bandwidth Product w w scs .i w VCE= 100V; VBE= -1.5V VCE= 60V; VBE= -1.5V, TC=150 VEB= 7V; IC= 0 IC= 4A; VCE= 4V .cn mi e 0.7 1.0 5.0 1.0 mA mA mA 25 100 IC= 0.3A; VCE= 2V 0.8 MHz isc Websitewww.iscsemi.cn 2 |
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