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| MITSUBISHI IGBT MODULES CM100TL-24NF HIGH POWER SWITCHING USE CM100TL-24NF IC ................................................................... 100A VCES ......................................................... 1200V Insulated Type 6-elements in a pack APPLICATION AC drive inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 11 7 13.62 40.78 12 35 12 A B U V W B (13.5) 32 12 6-M5 NUTS 10.75 (19.75) 12 22 23 12 23 12 23 12 (SCREWING DEPTH) 11.75 55 1 1 1 1 8 P 22 -0.5 16 23.2 +1 3 WP VP LABEL 120 106 0.5 17 17 2-5.5 MOUNTING HOLES UP CN N Housing Type of A and B (J.S.T.Mfg.Co.Ltd) A = B8P-VH-FB-B, B = B2P-VH-FB-B P UP-1 UP-2 U CN-5 CN-6 CN-3 CN-4 VP-1 VP-2 V WP-1 WP-2 W CN-1 CN-2 B CN-7 CN-8 N NC NC NC CIRCUIT DIAGRAM Feb. 2009 1 MITSUBISHI IGBT MODULES CM100TL-24NF HIGH POWER SWITCHING USE ABSOLUTE MAXIMUM RATINGS (Tj = 25C, unless otherwise specified) Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso -- -- -- Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight G-E Short C-E Short DC, TC = 80C*1 Pulse Pulse TC = 25C Conditions Ratings 1200 20 100 200 100 200 620 -40 ~ +150 -40 ~ +125 2500 2.5 ~ 3.5 2.5 ~ 3.5 350 Unit V V A A A A W C C Vrms N*m N*m g (Note 2) (Note 2) Terminals to base plate, f = 60Hz, AC 1 minute Main terminals M5 screw Mounting M5 screw Typical value ELECTRICAL CHARACTERISTICS (Tj = 25C, unless otherwise specified) Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) RG Parameter Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance Contact thermal resistance External gate resistance Test conditions VCE = VCES, VGE = 0V IC = 10mA, VCE = 10V VGE = VGES, VCE = 0V IC = 100A, VGE = 15V VCE = 10V VGE = 0V VCC = 600V, IC = 100A, VGE = 15V VCC = 600V, IC = 100A VGE = 15V RG = 3.1, Inductive load IE = 100A IE = 100A, VGE = 0V IGBT part (1/6 module)*1 FWDi part (1/6 module)*1 Case to heat sink, Thermal compound Applied (1/6 module)*2 Tj = 25C Tj = 125C Min. -- 6 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 3.1 Limits Typ. -- 7 -- 2.1 2.4 -- -- -- 500 -- -- -- -- -- 4.8 -- -- -- 0.085 -- Max. 1 8 0.5 3.0 -- 17.5 1.5 0.34 -- 100 70 300 350 150 -- 3.8 0.20 0.28 -- 42 Unit mA V A V nF nF nF nC ns ns ns ns ns C V K/W K/W K/W *1 : Case temperature (Tc) measured point is just under the chips. If you use this value, Rth(f-a) should be measured just under the chips. *2 : Typical value is measured by using thermally conductive grease of = 0.9[W/(m * K)]. Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. Feb. 2009 2 MITSUBISHI IGBT MODULES CM100TL-24NF HIGH POWER SWITCHING USE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 200 VGE = 20V 4 15 13 Tj = 25C 12 VGE = 15V 150 3 100 11 50 2 10 9 1 Tj = 25C Tj = 125C 0 0 50 100 150 200 0 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 103 EMITTER CURRENT IE (A) 7 5 3 2 10 Tj = 25C 8 6 102 7 5 3 2 4 IC = 200A IC = 100A IC = 40A 0 6 8 10 12 14 16 18 20 2 Tj = 25C Tj = 125C 0 1 2 3 4 5 101 GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) CAPACITANCE-VCE CHARACTERISTICS (TYPICAL) 102 CAPACITANCE Cies, Coes, Cres (nF) 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 Cies 7 5 3 2 td(off) tf 101 SWITCHING TIME (ns) 102 7 5 3 2 100 Coes Cres td(on) tr Conditions: VCC = 600V VGE = 15V RG = 3.1 Tj = 125C Inductive load 2 3 5 7 102 2 3 5 7 103 101 7 5 3 2 10-1 VGE = 0V 10-2 -1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) 100 1 10 COLLECTOR CURRENT IC (A) Feb. 2009 3 MITSUBISHI IGBT MODULES CM100TL-24NF HIGH POWER SWITCHING USE REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) 7 5 3 2 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j-c) (ratio) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 100 Single Pulse, 7 5 TC = 25C 3 Under the chip 2 10-1 7 5 3 2 10-1 7 5 3 2 102 7 5 3 2 Irr trr Conditions: VCC = 600V VGE = 15V RG = 3.1 Tj = 25C Inductive load 2 3 5 7 102 2 3 5 7 103 101 1 10 IGBT part: 10-2 Per unit base = 7 5 Rth(j-c) = 0.20K/W FWDi part: 3 Per unit base = 2 Rth(j-c) = 0.28K/W 10-3 10-2 7 5 3 2 10-3 10-5 2 3 5 710-4 2 3 5 7 10-3 EMITTER CURRENT IE (A) TIME (s) SWITCHING LOSS vs. COLLECTOR CURRENT (TYPICAL) 101 7 SWITCHING LOSS vs. GATE RESISTANCE (TYPICAL) Conditions: VCC = 600V 5 VGE = 15V 3 IC = 100A Tj = 125C 2 Inductive load C snubber at bus 101 7 7 5 3 2 Esw(off) SWITCHING LOSS (mJ/pulse) 102 SWITCHING LOSS (mJ/pulse) 5 3 2 Esw(on) Esw(on) Esw(off) 100 7 5 3 2 10-1 1 10 Conditions: VCC = 600V VGE = 15V RG = 3.1 Tj = 125C Inductive load C snubber at bus 2 3 5 7 102 2 3 5 7 103 100 0 10 2 3 5 7 101 2 3 5 7 102 COLLECTOR CURRENT IC (A) GATE RESISTANCE RG () RECOVERY LOSS vs. IE (TYPICAL) 102 RECOVERY LOSS (mJ/pulse) RECOVERY LOSS vs. GATE RESISTANCE (TYPICAL) 102 7 5 RECOVERY LOSS (mJ/pulse) VCC = 600V VGE = 15V 3 RG = 3.1 Tj = 125C 2 Inductive load C snubber at bus 101 7 5 3 2 7 Conditions: 5 3 2 Err 101 7 5 3 2 Conditions: VCC = 600V VGE = 15V IE = 100A Tj = 125C Inductive load C snubber at bus Err 100 1 10 2 3 5 7 102 2 3 5 7 103 100 0 10 2 3 5 7 101 2 3 5 7 102 EMITTER CURRENT IE (A) GATE RESISTANCE RG () Feb. 2009 4 MITSUBISHI IGBT MODULES CM100TL-24NF HIGH POWER SWITCHING USE GATE CHARGE CHARACTERISTICS (TYPICAL) 20 GATE-EMITTER VOLTAGE VGE (V) IC = 100A VCC = 400V 16 VCC = 600V 12 8 4 0 0 200 400 600 800 GATE CHARGE QG (nC) Feb. 2009 5 |
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