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| SSFP9N80 StarMOST Power MOSFET Extremely high dv/dt capability Low Gate Charge Qg results in Simple Drive Requirement 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatability VDSS = 800V ID25 = 7.5A RDS(ON) = 1.2 Description StarMOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS also achieves faster switching speeds through optimised gate layout with planar stripe DMOS technology. Pin1-Gate Pin2-Drain Pin1-Source Application Switching application Absolute Maximum Ratings Parameter ID@Tc=25 C ID@Tc=100C IDM PD@TC=25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current,VGS@10V Continuous Drain Current,VGS@10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Max. 7.5 4.7 30 150 1.2 20 7.5 350 4.5 -55 to +150 300(1.6mm from case) 10 Ibfin(1.1Nm) Units A W W/ C V mJ A mJ V/ns C Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque,6-32 or M3 screw Thermal Resistance Parameter RJC RCS RJA Junction-to-case Case-to-Sink,Flat,Greased Surface Junction-to-Ambient Min. -- -- -- Typ. -- 0.5 -- Max. 0.83 -- 62.5 C/W Units 1 SSFP9N80 StarMOST Power MOSFET Electrical Characteristics @TJ=25 C(unless otherwise specified) Parameter V(BR)DSS RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD Drain-to-Source Breakdown Voltage Static Drain-to-Source On-resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage current Gate-to-Source Forward leakage Gate-to-Source Reverse leakage Total Gate Charge Gate-to-Source charge Gate-to-Drain("Miller") charge Turn-on Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance V(BR)DSS/TJ Breakdown Voltage Temp.Coefficient Min. 800 -- -- 3.0 -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. -- 0.5 0.9 -- 7.5 -- -- -- -- 60 12 35 26 19 58 18 4.5 Max. Units -- -- 1.2 5.0 -- 1 50 10 -10 84 -- -- -- -- -- -- -- V Test Conditions VGS=0V,ID=250A V/C Reference to 25C,ID=1mA VGS=10V,ID=3.75A V S A nA VDS=VGS,ID=100A VDS=15V,ID=3.75A VDS=800V,VGS=0V VDS=640V,VGS=0V,TJ=150C VGS=20V VGS=-20V ID=7.5A nC VDS=640V VGS=10V VDD=400V ID=3.77A nS RG=4.7 VGS=10V Between lead, 6mm(0.25in.) nH from package and center of die contact VGS=0V pF VDS=25V f=1.0MHZ LS Ciss Coss Crss Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance -- -- -- -- 7.5 1900 180 38 -- -- -- -- Source-Drain Ratings and Characteristics Parameter IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-on Time . . Min. -- -- -- -- -- Typ. -- -- -- 690 6.4 Max. 7.5 A 30 1.6 -- -- V nS nC Units Test Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ=25C,IS=7.5A,VGS=0V TJ=25C,IF=7.5A di/dt=100A/s Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD) Notes: Repetitive rating;pulse width limited by max.junction temperature(see figure 11) ISD7.5A,di/dt300A/S,VDDV(BR)DSS, TJ25 C Pulse width300S; duty cycle2% L = 25mH, IAS = 7.5A, VDD = 50V, RG = 25, Starting TJ = 25C 2 |
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