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| TSB1132 Low Vcesat PNP Transistor SOT-89 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCBO BVCEO IC VCE(SAT) -40V -32V -1A -0.15V @ IC / IB = -0.5A / -50mA Features Low VCE(SAT) -0.15 @ IC / IB = --.5A / -50mA (Typ.) Excellent DC current gain characteristics Ordering Information Part No. TSB1132CY RM Package SOT-89 Packing 1Kpcs / 7" Reel Structure Epitaxial Planar Type PNP Silicon Transistor Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range Note: 1. Single pulse, Pw=10ms, Duty50% 2. When mounted on a 40 x 40 x 0.7mm ceramic board. DC Pulse Symbol VCBO VCEO VEBO IC PD TJ TSTG Limit -40 -32 -5 -1 -2.5 (note1) 0.6 2 (note 2) +150 - 55 to +150 Unit V V V A W o o C C Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage DC Current Transfer Ratio Transition Frequency Output Capacitance hFE values are classified as follows: Rank Q R hFE 120~270 180~390 Conditions IC = -50uA, IE = 0 IC = -1mA, IB = 0 IE = -50uA, IC = 0 VCB = -20V, IE = 0 VEB = -4V, IC = 0 IC / IB = -0.5A / -50mA VCE = -3V, IC = 100mA VCE =-5V, IC=-50mA, f=100MHz VCB = -10V, f=1MHz Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(SAT) hFE fT Cob Min -40 -32 -5 ---82 --- Typ ------0.15 -150 20 Max ----0.5 -0.5 -0.5 390 -30 Unit V V V uA uA V MHz pF 1/1 Version: A08 TSB1132 Low Vcesat PNP Transistor Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Figure 1. DC Current Gain Figure 2. VCE(SAT) v.s. Ic Figure 3. VBE(SAT) v.s. Ic Figure 4. Power Derating Curve 2/2 Version: A08 TSB1132 Low Vcesat PNP Transistor SOT-89 Mechanical Drawing DIM A B C D E F G H I J SOT-89 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 4.40 4.60 0.173 0.181 1.50 1.7 0.059 0.070 2.30 2.60 0.090 0.102 0.40 0.52 0.016 0.020 1.50 1.50 0.059 0.059 3.00 3.00 0.118 0.118 0.89 1.20 0.035 0.047 4.05 4.25 0.159 0.167 1.4 1.6 0.055 0.068 0.35 0.44 0.014 0.017 3/3 Version: A08 TSB1132 Low Vcesat PNP Transistor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 4/4 Version: A08 |
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