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| SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1403 DESCRIPTION *With TO-220Fa package *High DC current gain *Low collector saturation voltage *DARLINGTON APPLICATIONS *For use in low frequency power amplifier applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 25 150 -55~150 Open emitter Open base Open collector CONDITIONS VALUE -120 -120 -7 -6 -12 2 W UNIT V V V A A SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current DC current gain Diode forward voltage CONDITIONS IC=-25mA; RBE== IC=-100A; IE=0 IE=-50mA; IC=0 IC=-3A ;IB=-6mA IC=-6A ;IB=-60mA IC=-3A ;IB=-6mA IC=-6A ;IB=-60mA VCB=-100V; IE=0 VCE=-100V; RBE== IC=-3A ; VCE=-3V ID=6A 1000 MIN -120 -120 -7 2SB1403 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2 ICBO ICEO hFE VD TYP. MAX UNIT V V V -1.5 -3.0 -2.0 -3.5 -10 -10 20000 3.0 V V V V A A V 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1403 Fig.2 Outline dimensions (unindicated tolerance: 0.15 mm) 3 |
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