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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1435 DESCRIPTION *With TO-3PN package *DARLINGTON *High DC current gain *Complement to type 2SB1031 APPLICATIONS *For low frequency power amplifier and high current switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Tc=25) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 100 100 7 15 20 3 100 150 -55~150 UNIT V V V A A A W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SD1435 MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=1mA, RBE= 100 V V(BR)EBO Emitter-base breakdown voltage IE=50mA, IC=0 7 V VCEsat-1 Collector-emitter saturation voltage IC=8A ,IB=16mA 2.0 V VCEsat-2 Collector-emitter saturation voltage IC=15A ,IB=150mA 3.0 V VBEsat-1 Base-emitter saturation voltage IC=8A ,IB=16mA 2.5 V VBEsat-2 Base-emitter saturation voltage IC=15A ,IB=150mA 3.5 V A ICBO Collector cut-off current VCB=100V, IE=0 100 ICEO Collector cut-off current VCE=80V, RBE= 1.0 A hFE DC current gain IC=8A ; VCE=3V 1000 20000 Switching times s ton Turn-on time IC = 8 A,IB1 =-IB2 =16mA 2.0 toff Turn-off time 8.0 s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1435 Fig.2 Outline dimensions(unindicated tolerance:0.1mm) 3 |
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