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APT30GS60KR(G)
600V, 30A, VCE(ON) = 2.8V Typical
Thunderbolt(R) High Speed NPT IGBT
The Thunderbolt HSTM series is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt(R) series, but trades higher VCE(ON) for significantly lower turn-on energy Eoff. The low switching losses enable operation at switching frequencies over 100kHz, approaching power MOSFET performance but lower cost. An extremely tight parameter distribution combined with a positive VCE(ON) temperature coefficient make it easy to parallel Thunderbolts HSTM IGBT's. Controlled slew rates result in very good noise and oscillation immunity and low EMI. The short circuit duration rating of 10s make these IGBT's suitable for motor drive and inverter applications. Reliability is further enhanced by avalanche energy ruggedness.
Features
* Fast Switching with low EMI * Very Low EOFF for Maximum Efficiency * Short circuit rated * Low Gate Charge * Tight parameter distribution * Easy paralleling * RoHS Compliant
Typical Applications
APT30GS60KR(G)
* ZVS Phase Shifted and other Full Bridge * Half Bridge * High Power PFC Boost * Welding * Induction heating * High Frequency SMPS
C G E
Absolute Maximum Ratings
Symbol I C1 I C2 I CM VGE SSOA EAS tSC Parameter Continuous Collector Current TC = @ 25C Continuous Collector Current TC = @ 100C Pulsed Collector Current 1 Gate-Emitter Voltage Switching Safe Operating Area Single Pulse Avalanche Energy 2 Short Circut Withstand Time 3 Rating 54 30 113 30V 113 165 10 mJ s V A Unit
Thermal and Mechanical Characteristics
Symbol PD RJC RCS TJ, TSTG TL WT Torque Parameter Total Power Dissipation TC = @ 25C Junction to Case Thermal Resistance Case to Sink Thermal Resistance, Flat Greased Surface Operating and Storage Junction Temperature Range Soldering Temperature for 10 Seconds (1.6mm from case) Package Weight Mounting Torque, 6-32 M3 Screw Min -55 Typ 0.11 0.22 5.9 Max 250 0.50 150 300 10 1.1 Unit W C/W C
8-2007 052-6307 Rev A
oz g in*lbf N*m
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should be Followed.
Microsemi Website - http://www.microsemi.com
Static Characteristics
Symbol VBR(CES) VBR(ECS) Parameter
TJ = 25C unless otherwise specified
Test Conditions VGE = 0V, IC = 250A VGE = 0V, IC = 1A Reference to 25C, IC = 250A VGE = 15V IC = 30A TJ = 25C TJ = 125C Min 600 3 Typ 25 0.60 2.8 3.25 4 6.7 -
APT30GS60KR(G)
Max 3.15 5 50 1000 100 mV/C A nA V Unit V V/C
Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage
VBR(CES)/TJ Breakdown Voltage Temperature Coeff
VCE(ON)
Collector-Emitter On Voltage 4
VGE(th) Gate-Emitter Threshold Voltage VGE(th)/TJ Threshold Voltage Temp Coeff ICES IGES Zero Gate Voltage Collector Current Gate-Emitter Leakage Current
VGE = VCE, IC = 1mA VCE = 600V, VGE = 0V TJ = 25C TJ = 125C
VGE = 20V
Dynamic Characteristics
Symbols gfs Cies Coes Cres Co(cr) Co(er) Qg Qge Ggc td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Parameter Input Capacitance Output Capacitance
TJ = 25C unless otherwise specified
Test Conditions VCE = 50V, IC = 30A
Min -
Typ 18 1600 140 90 130 95
Max -
Unit S
Forward Transconductance
Reverse Transfer Capacitance Reverse Transfer Capacitance Charge Related 5 Reverse Transfer Capacitance Current Related 6 Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Energy Turn-On Switching Energy Turn-Off Switching Energy Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Energy Turn-On Switching Energy
8 9 8 9 10
VGE = 0V, VCE = 25V f = 1MHz
pF
VGE = 0V VCE = 0 to 400V
VGE = 0 to 15V IC = 30A, VCE = 300V
-
145 12 65 16 29 360 27 TBD 800 570 16 29 390 22 TBD 1185 695
mJ ns mJ ns nC
Inductive Switching IGBT and Diode: TJ = 25C, VCC = 400V, IC = 30A RG = 9.1 7, VGG = 15V
Inductive Switching IGBT and Diode: TJ = 125C, VCC = 400V, IC = 30A RG = 9.1 7, VGG = 15V
-
Turn-Off Switching Energy 10
052-6307
Rev A
8-2007
TYPICAL PERFORMANCE CURVES
120 100 80
TJ = 25C
VGE = 15V
120 100 80 60 40 20 0
APT30GS60KR(G)
T = 125C
J
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
VGE = 13 & 15V 12V
11V 10V 9V 8V 6V
60 40 20
TJ = 125C
TJ = 150C
0 0 1 2 3 4 5 6 7 8 VCE(ON), COLLECTER-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics
250s PULSE TEST<0.5 % DUTY CYCLE
0 5 10 15 20 25 30 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) FIGURE 2, Output Characteristics
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
120 100 80 60 40 20 0
6 5 4 3 2 1 0
IC = 60A
IC, COLLECTOR CURRENT (A)
TJ = 125C TJ = 25C
TJ = -55C
IC = 30A IC = 15A
0
2 4 6 8 10 12 14 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics
6
FIGURE 4, On State Voltage vs Gate-to- Emitter Voltage 16 VGE, GATE-TO-EMITTER VOLTAGE (V)
8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V)
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
5
4
IC = 60A
14 12 10 8 6 4 2 0 0 20 40 60 80 100 120 140 160 GATE CHARGE (nC) FIGURE 6, Gate Charge VCE = 120V VCE = 300V
3
IC = 30A IC = 15A
2
VCE = 480V
1
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
25 50 75 100 125 150 TJ, Junction Temperature (C) FIGURE 5, On State Voltage vs Junction Temperature 2000 IC, DC COLLECTOR CURRENT(A) 1000
0
0
60
Cies
50 40 30 20 10 0 25
C, CAPACITANCE ( F)
P
100
Coes
Cres
052-6307
0 100 200 300 400 500 600 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 7, Capacitance vs Collector-To-Emitter Voltage
10
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature
Rev A
8-2007
TYPICAL PERFORMANCE CURVES
25 td (OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns)
500
APT30GS60KR(G)
20 VGE = 15V 15
400
VGE =15V,TJ=125C VGE =15V,TJ=25C
300
10
200
5 VCE = 400V
0 10 20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 70 60 50 40 30 20 10 0 10 20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 4000 EON2, TURN ON ENERGY LOSS (J) EOFF, TURN OFF ENERGY LOSS (J)
= 400V V CE = +15V V GE R = 9.1
G
0
TJ = 25C, TJ =125C RG = 9.1 L = 100H
100
0 10 20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 60 50
RG = 9.1, L = 100H, VCE = 400V
0
VCE = 400V RG = 9.1 L = 100H
RG = 9.1, L = 100H, VCE = 400V
TJ = 25 or 125C,VGE = 15V
tf, FALL TIME (ns)
tr, RISE TIME (ns)
40 30 20 10 0
TJ = 125C, VGE = 15V
TJ = 25C, VGE = 15V
0
0 10 20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 1600 1400 1200 1000 800 600 400 200 0
TJ = 25C, VGE = 15V
= 400V V CE = +15V V GE R = 9.1
G
3000
TJ = 125C,VGE =15V
TJ = 125C, VGE = 15V
2000
1000
TJ = 25C,VGE =15V
0 10 20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current SWITCHING ENERGY LOSSES (mJ) 5
= 400V V CE = +15V V GE T = 125C
J
0
0 10 20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current 4 SWITCHING ENERGY LOSSES (mJ)
= 400V V CE = +15V V GE R = 9.1
G
4
3
Eon2,60A
3
Eon2,60A Eoff,60A
2
Eoff,60A
2
Eon2,30A
8-2007
1
1
Eon2,30A Eon2,15A
Rev A
Eoff,30A
Eoff,15A Eon2,15A
Eoff,30A
052-6307
10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance
0
0
25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
0
Eoff,15A
0
TYPICAL PERFORMANCE CURVES
200 100 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
ICM
APT30GS60KR(G)
200 100
ICM
10
VCE(on)
10
VCE(on)
13s
100s 1ms
13s
100s 1ms
1
10ms
100ms
1
TJ = 150C TC = 25C
10ms 100ms DC line
0.1
TJ = 125C TC = 75C
DC line
1 10 100 800 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) Figure 17, Forward Safe Operating Area
0.1
Scaling for Different Case & Junction Temperatures: IC = IC(T = 25C)*(TJ - TC)/125
C
1 10 100 800 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) Figure 18, Maximum Forward Safe Operating Area
0.60 0.50 0.40 0.30 0.20 0.10 0
ZJC, THERMAL IMPEDANCE (C/W)
0.9 0.7 0.5 0.3 0.1 0.05
10-5 10-4
Note:
PDM
t1 t2
SINGLE PULSE
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
120 FMAX, OPERATING FREQUENCY (kHz)
T = 75C
C
TJ (C)
0.0838 Dissipated Power (Watts) 0.00245 0.00548 0.165 0.207
TC (C)
0.209
T = 100C
10
C
ZEXT
Fmax = min (fmax, fmax2) 0.05 fmax1 = td(on) + tr + td(off) + tf fmax2 = Pdiss = Pdiss - Pcond Eon2 + Eoff TJ - TC RJC
ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction.
Figure 20, Transient Thermal Impedance Model
10 20 30 40 50 IC, COLLECTOR CURRENT (A) Figure 21, Operating Frequency vs Collector Current
1
T = 125C J T = 75C C D = 50 % = 400V V CE R = 9.1
G
0
052-6307
Rev A
8-2007
APT30GS60KR(G)
10% td(on) TJ = 125C
APT40DQ60
Gate Voltage
Collector Current
V CC
IC
V CE
90% tr 5% 10% 5% Collector Voltage
A D.U.T.
Switching Energy
Figure 22, Inductive Switching Test Circuit
Figure 23, Turn-on Switching Waveforms and Definitions
Gate Voltage 90%
TJ = 125C
td(off) Collector Voltage 90% tf 10%
0
Collector Current
Switching Energy
Figure 24, Turn-off Switching Waveforms and Definitions
FOOT NOTE: 1 2 3 4 5 6 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. Starting at TJ = 25C, L = 224H, RG = 25, IC = 30A Short circuit time: VGE = 15V, VCC 600V, TJ 150C Pulse test: Pulse width < 380s, duty cycle < 2% Co(cr) is defined as a fixed capacitance with the same stored charge as Coes with VCE = 67% of V(BR)CES. Co(er) is defined as a fixed capacitance with the same stored energy as Coes with VCE = 67% of V(BR)CES. To calculate Co(er) for any value of
Rev A
VCE less than V(BR)CES, use this equation: Co(er) = -1.40E-7/VDS^2 + 1.47E-8/VDS + 5.95E-11. 7 RG is external gate resistance, not including internal gate resistance or gate driver impedance (MIC4452). 8 Eon1 is the inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on switching loss. It is measured by clamping the inductance with a Silicon Carbide Schottky diode. 9 Eon2 is the inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on energy. 10 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1.
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
052-6307
8-2007
APT30GS60KR(G)
TO-220 K Package Outline
e1 SAC: Tin, Silver, Copper
Collector
Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
052-6307
Dimensions in Inches and (Millimeters)
Rev A
8-2007
Gate Collector Emitter

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