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| FDB120N10 N-Channel PowerTrench(R) MOSFET June 2009 FDB120N10 N-Channel Features * RDS(on) = 9.7m ( Typ.)@ VGS = 10V, ID = 74A * Fast Switching Speed * Low Gate Charge * High Performance Trench Technology for Extremely Low RDS(on) * High Power and Current Handling Capability * RoHS Compliant tm PowerTrench(R) MOSFET Description This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. 100V, 74A, 12m Application * DC to DC Converters / Synchronous Rectification D D G D2-PAK G S FDB Series S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS VGSS ID IDM EAS dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC - Continuous (TC = 25oC) - Continuous (TC = 100oC) - Pulsed (Note 1) (Note 2) (Note 3) Ratings 100 20 74 52 296 198 5.8 170 1.14 -55 to +175 300 Units V V A A mJ V/ns W W/oC oC oC Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds Thermal Characteristics Symbol RJC RJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Ratings 0.88 62.5 Units oC/W (c)2009 Fairchild Semiconductor Corporation FDB120N10 Rev. A 1 www.fairchildsemi.com FDB120N10 N-Channel PowerTrench(R) MOSFET Package Marking and Ordering Information Device Marking FDB120N10 Device FDB120N10 Package D2-PAK Reel Size 330mm Tape Width 24mm Quantity 800 Electrical Characteristics TC = 25oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Body Leakage Current ID = 250A, VGS = 0V, TC = 25oC ID = 250A, Referenced to 25oC VDS = 100V, VGS = 0V VDS = 100V, VGS = 0V,TC = 150oC VGS = 20V, VDS = 0V 100 0.1 1 500 100 V V/oC A nA On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250A VGS = 10V, ID = 74A VDS = 10V, ID = 74A (Note 4) 2.5 - 9.7 105 4.5 12 - V m S Dynamic Characteristics Ciss Coss Crss Qg(tot) Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain "Miller" Charge VDS = 80V ID = 74A VGS = 10V (Note 4, 5) VDS = 25V, VGS = 0V f = 1MHz - 4215 405 170 66 26 20 5605 540 255 86 - pF pF pF nC nC nC Switching Characteristics td(on) tr td(off) tf Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDD = 50V, ID = 74A VGS = 10V, RGEN = 4.7 (Note 4, 5) - 27 105 39 15 64 220 88 40 ns ns ns ns Drain-Source Diode Characteristics IS ISM VSD trr Qrr Maximum Continuous Drain to Source Diode Forward Current Maximum Pulsed Drain to Source Diode Forward Current Drain to Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, ISD = 74A VGS = 0V, ISD = 74A dIF/dt = 100A/s (Note 4) - 44 67 74 296 1.3 - A A V ns nC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 0.11mH, IAS = 60A, VDD = 50V, RG = 25, Starting TJ = 25C 3. ISD 74A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test: Pulse width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FDB120N10 Rev. A 2 www.fairchildsemi.com FDB120N10 N-Channel PowerTrench(R) MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics 3000 1000 VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Figure 2. Transfer Characteristics 500 ID, Drain Current[A] 100 ID, Drain Current[A] 100 175 C o -55 C o 10 10 25 C o 1 0.2 0.1 *Notes: 1. 250s Pulse Test 2. TC = 25 C o 1 10 *Notes: 1. VDS = 10V 2. 250s Pulse Test 1 VDS, Drain-Source Voltage[V] 3 4 5 6 7 8 VGS, Gate-Source Voltage[V] 9 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 0.04 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 500 RDS(ON) [], Drain-Source On-Resistance 0.03 IS, Reverse Drain Current [A] 100 0.02 VGS = 10V 175 C o 25 C o 10 0.01 VGS = 20V 0.00 0 50 *Note: TC = 25 C o *Notes: 1. VGS = 0V 100 150 200 ID, Drain Current [A] 250 300 1 0.2 2. 250s Pulse Test 0.4 0.6 0.8 1.0 1.2 VSD, Body Diode Forward Voltage [V] 1.4 Figure 5. Capacitance Characteristics 7000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Figure 6. Gate Charge Characteristics 10 VGS, Gate-Source Voltage [V] VDS = 25V VDS = 50V VDS = 80V 5600 Capacitances [pF] 8 Ciss 4200 *Note: 1. VGS = 0V 2. f = 1MHz 6 2800 Coss 4 1400 Crss 2 *Note: ID =74A 0 0.1 0 1 10 VDS, Drain-Source Voltage [V] 30 0 20 40 60 Qg, Total Gate Charge [nC] 80 FDB120N10 Rev. A 3 www.fairchildsemi.com FDB120N10 N-Channel PowerTrench(R) MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature 1.15 Figure 8. On-Resistance Variation vs. Temperature 2.8 RDS(on), [Normalized] Drain-Source On-Resistance 2.4 2.0 1.6 1.2 0.8 0.4 -100 *Notes: 1. VGS = 10V 2. ID = 74A BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.10 1.05 1.00 0.95 *Notes: 1. VGS = 0V 2. ID = 1mA 0.90 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 Figure 9. Maximum Safe Operating Area 1000 20s Figure 10. Maximum Drain Current vs. Case Temperature 75 ID, Drain Current [A] 100 10 Operation in This Area is Limited by R DS(on) 10ms DC ID, Drain Current [A] 100s 1ms 50 1 *Notes: 25 0.1 1. TC = 25 C 2. TJ = 175 C 3. Single Pulse o o 0.01 0.1 1 10 VDS, Drain-Source Voltage [V] 100 200 0 25 50 75 100 125 150 o TC, Case Temperature [ C] 175 Figure 11. Transient Thermal Response Curve 1 Thermal Response [ZJC] 0.5 0.2 0.1 0.1 0.05 0.02 0.01 PDM t1 t2 *Notes: 1. ZJC(t) = 0.88 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZJC(t) o 0.01 Single pulse 0.005 -5 10 10 -4 10 10 10 Rectangular Pulse Duration [sec] -3 -2 -1 1 10 FDB120N10 Rev. A 4 www.fairchildsemi.com FDB120N10 N-Channel PowerTrench(R) MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDB120N10 Rev. A 5 www.fairchildsemi.com FDB120N10 N-Channel PowerTrench(R) MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT V + DS _ I SD L D r iv e r R G S am e T ype as DUT V DD V GS * d v / d t c o n t r o lle d b y R G * I S D c o n t r o lle d b y p u ls e p e r io d V GS ( D r iv e r ) G a t e P u ls e W id t h D = -------------------------G a t e P u ls e P e r io d 10V I F M , B o d y D io d e F o r w a r d C u r r e n t I SD (DUT ) IR M d i/d t B o d y D io d e R e v e r s e C u r r e n t V DS (DUT ) B o d y D io d e R e c o v e r y d v / d t V SD V DD B o d y D io d e F o r w a r d V o lta g e D r o p FDB120N10 Rev. A 6 www.fairchildsemi.com FDB120N10 N-Channel PowerTrench(R) MOSFET Mechanical Dimensions FDB120N10 Rev. A 7 www.fairchildsemi.com FDB120N10 N-Channel PowerTrench(R) MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. PowerTrench(R) Auto-SPMTM F-PFSTM The Power Franchise(R) Build it NowTM PowerXSTM FRFET(R) (R) SM CorePLUSTM Global Power Resource Programmable Active DroopTM (R) Green FPSTM CorePOWERTM QFET TinyBoostTM QSTM Green FPSTM e-SeriesTM CROSSVOLTTM TinyBuckTM Quiet SeriesTM GmaxTM CTLTM TinyLogic(R) RapidConfigureTM GTOTM Current Transfer LogicTM (R) TINYOPTOTM IntelliMAXTM EcoSPARK TinyPowerTM EfficentMaxTM ISOPLANARTM TM TinyPWMTM Saving our world, 1mW /W /kW at a timeTM EZSWITCHTM * MegaBuckTM TinyWireTM TM* SmartMaxTM MICROCOUPLERTM TriFault DetectTM SMART STARTTM MicroFETTM (R) TRUECURRENTTM* SPM MicroPakTM (R) SerDesTM STEALTHTM MillerDriveTM (R) Fairchild SuperFETTM MotionMaxTM (R) Fairchild Semiconductor Motion-SPMTM SuperSOTTM-3 FACT Quiet SeriesTM UHC(R) OPTOLOGIC(R) SuperSOTTM-6 (R) (R) FACT OPTOPLANAR Ultra FRFETTM SuperSOTTM-8 (R) FAST(R) UniFETTM SupreMOSTM FastvCoreTM VCXTM SyncFETTM FETBenchTM VisualMaxTM Sync-LockTM PDP SPMTM (R) FlashWriter * XSTM (R)* Power-SPMTM FPSTM tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handing and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative / In Design Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I40 Preliminary First Production No Identification Needed Obsolete Full Production Not In Production FDB120N10 Rev. A 8 www.fairchildsemi.com |
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