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| FDI030N06 N-Channel PowerTrench(R) MOSFET June 2009 FDI030N06 N-Channel PowerTrench MOSFET 60V, 193A, 3.2m Features * RDS(on) = 2.6m ( Typ.)@ VGS = 10V, ID = 75A * Fast Switching Speed * Low Gate Charge * High Performance Trench Technology for Extremely Low RDS(on) * High Power and Current Handling Capability * RoHS Compliant tm (R) Description This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Application * DC to DC Convertors / Synchronous Rectification D G GDS I2-PAK FDI Series S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS VGSS ID IDM EAS dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage -Continuous (TC = 25oC, Silicon Limited) Drain Current Drain Current Single Pulsed Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC -Continuous (TC = 100oC, Silicon Limited) -Continuous (TC = 25oC, Package Limited) - Pulsed (Note 1) (Note 2) (Note 3) Ratings 60 20 193* 136* 120 772 1434 6 231 1.54 -55 to +175 300 A mJ V/ns W W/oC oC o Units V V A Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds C *Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A. Thermal Characteristics Symbol RJC RJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Ratings 0.65 62.5 Units o C/W (c)2009 Fairchild Semiconductor Corporation FDI030N06 Rev. A 1 www.fairchildsemi.com FDI030N06 N-Channel PowerTrench(R) MOSFET Package Marking and Ordering Information Device Marking FDI030N06 Device FDI030N06 Package TO-262 Reel Size Tape Width Quantity 50 Electrical Characteristics TC = 25oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Body Leakage Current ID = 250A, VGS = 0V, TC = 25oC ID = 1mA, Referenced to 25oC VDS = 48V, VGS = 0V VDS = 48V, TC = 150oC VGS = 20V, VDS = 0V 60 0.05 1 500 100 V V/oC A nA On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250A VGS = 10V, ID = 75A VDS = 10V, ID = 75A (Note 4) 2.5 - 3.5 2.6 154 4.5 3.2 - V m S Dynamic Characteristics Ciss Coss Crss Qg(tot) Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain "Miller" Charge VDS = 48V, ID = 75A VGS = 10V (Note 4, 5) VDS = 25V, VGS = 0V f = 1MHz - 7380 1095 415 116 40 35 9815 1455 625 151 - pF pF pF nC nC nC Switching Characteristics td(on) tr td(off) tf Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDD = 30V, ID = 75A VGS = 10V, RGEN = 4.7 (Note 4, 5) - 39 178 54 33 87 366 118 76 ns ns ns ns Drain-Source Diode Characteristics IS ISM VSD trr Qrr Maximum Continuous Drain to Source Diode Forward Current Maximum Pulsed Drain to Source Diode Forward Current Drain to Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, ISD = 75A VGS = 0V, ISD = 75A dIF/dt = 100A/s (Note 4) - 46 50 193 772 1.3 - A A V ns nC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 0.51mH, IAS = 75A, VDD = 50V, RG = 25, Starting TJ = 25C 3. ISD 75A, di/dt 450A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test: Pulse width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FDI030N06 Rev. A 2 www.fairchildsemi.com FDI030N06 N-Channel PowerTrench(R) MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics 700 VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Figure 2. Transfer Characteristics 400 *Notes: 1. VDS = 10V 2. 250s Pulse Test 100 ID, Drain Current[A] ID, Drain Current[A] 100 150 C o -55 C 25 C o o 10 *Notes: 1. 250s Pulse Test 2. TC = 25 C o 10 0.1 1 1 VDS, Drain-Source Voltage[V] 5 2 4 6 VGS, Gate-Source Voltage[V] 8 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 3.5 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 400 RDS(ON) [], Drain-Source On-Resistance IS, Reverse Drain Current [A] 100 3.0 VGS = 10V 150 C 25 C o o 10 2.5 VGS = 20V 2.0 0 70 *Note: TC = 25 C o *Notes: 1. VGS = 0V 140 210 ID, Drain Current [A] 280 350 1 0.0 2. 250s Pulse Test 0.5 1.0 VSD, Body Diode Forward Voltage [V] 1.5 Figure 5. Capacitance Characteristics 12000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Figure 6. Gate Charge Characteristics 10 VGS, Gate-Source Voltage [V] VDS = 15V VDS = 30V VDS = 48V 9000 Capacitances [pF] Ciss 8 6 6000 Coss *Note: 1. VGS = 0V 2. f = 1MHz 4 3000 Crss 2 *Note: ID = 75A 0 0.1 0 1 10 VDS, Drain-Source Voltage [V] 30 0 20 40 60 80 100 Qg, Total Gate Charge [nC] 120 FDI030N06 Rev. A 3 www.fairchildsemi.com FDI030N06 N-Channel PowerTrench(R) MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 BVDSS, [Normalized] Drain-Source Breakdown Voltage RDS(on), [Normalized] Drain-Source On-Resistance Figure 8. On-Resistance Variation vs. Temperature 2.0 1.1 1.5 1.0 *Notes: 1. VGS = 0V 2. ID = 10mA 1.0 *Notes: 1. VGS = 10V 2. ID = 75A 0.9 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 0.5 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 Figure 9. Maximum Safe Operating Area 10000 Figure 10. Maximum Drain Current vs. Case Temperature 200 ID, Drain Current [A] 1000 ID, Drain Current [A] 150 100 100s 100 10 Operation in This Area is Limited by R DS(on) *Notes: 1ms o o Limited by package 50 1 1. TC = 25 C 2. TJ = 175 C 3. Single Pulse 10ms 100ms DC 0.1 0.1 1 10 100 VDS, Drain-Source Voltage [V] 300 0 25 50 75 100 125 150 o TC, Case Temperature [ C] 175 Figure 11. Transient Thermal Response Curve 1 Thermal Response [Z JC] 0.5 0.2 0.1 0.05 0.02 0.1 PDM t1 t2 0.01 0.01 Single pulse *Notes: 1. ZJC(t) = 0.65 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZJC(t) o 0.001 -5 10 10 -4 10 10 10 Rectangular Pulse Duration [sec] -3 -2 -1 1 10 FDI030N06 Rev. A 4 www.fairchildsemi.com FDI030N06 N-Channel PowerTrench(R) MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDI030N06 Rev. A 5 www.fairchildsemi.com FDI030N06 N-Channel PowerTrench(R) MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + V DS _ I SD L D r iv e r R G S am e T ype as D U T V DD V GS * d v / d t c o n t r o lle d b y R G * IS D c o n t r o lle d b y p u ls e p e r io d VGS ( D r iv e r ) G a te P u ls e W id t h D = -------------------------G a te P u ls e P e r io d 10V IF M , B o d y D io d e F o r w a r d C u r r e n t I SD (DUT ) IR M d i/d t B o d y D io d e R e v e r s e C u r r e n t V DS (DUT ) B o d y D io d e R e c o v e r y d v /d t V SD V DD B o d y D io d e F o r w a r d V o lt a g e D r o p FDI030N06 Rev. A 6 www.fairchildsemi.com FDI030N06 N-Channel PowerTrench(R) MOSFET Mechanical Dimensions I2-PAK 9.90 0.20 (0.40) 4.50 0.20 +0.10 1.30 -0.05 1.20 0.20 9.20 0.20 MAX 3.00 (1.46) 13.08 0.20 (0.94) 1.27 0.10 1.47 0.10 0.80 0.10 10.08 0.20 MAX13.40 (4 ) 5 2.54 TYP 2.54 TYP 0.50 -0.05 +0.10 2.40 0.20 10.00 0.20 Dimensions in Millimeters FDI030N06 Rev. A 7 www.fairchildsemi.com TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPowerTM Auto-SPMTM Build it NowTM CorePLUSTM CorePOWERTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EfficentMaxTM EZSWITCHTM* TM* (R) Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FETBenchTM FlashWriter(R)* FPSTM F-PFSTM FRFET(R) SM Global Power Resource Green FPSTM Green FPSTM e-SeriesTM GmaxTM GTOTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM MotionMaxTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) (R) PowerTrench(R) PowerXSTM Programmable Active DroopTM QFET(R) QSTM Quiet SeriesTM RapidConfigureTM TM Saving our world, 1mW/W/kW at a timeTM SmartMaxTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SupreMOSTM SyncFETTM Sync-LockTM (R) * The Power Franchise (R) TinyBoostTM TinyBuckTM TinyCalcTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM TriFault DetectTM TRUECURRENTTM* SerDesTM PDP SPMTM Power-SPMTM UHC(R) Ultra FRFETTM UniFETTM VCXTM VisualMaxTM XSTM * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete Product Status Formative / In Design First Production Full Production Not In Production Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I41 (c) 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com |
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