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| TGF2023-05 25 Watt Discrete Power GaN on SiC HEMT Key Features * * * * * * * Frequency Range: DC - 18 GHz > 44 dBm Nominal Psat 55% Maximum PAE 15 dB Nominal Power Gain Bias: Vd = 28 - 40 V, Idq = 500 mA, Vg = -3 V Typical Technology: 0.25 um Power GaN on SiC Chip Dimensions: 0.82 x 1.44 x 0.10 mm * * * Primary Applications Space Military Broadband Wireless Measured Performance Bias conditions: Vd = 28 - 40 V, Idq = 500 mA, Vg = -3 V Typical Product Description The TriQuint TGF2023-05 is a discrete 5.0 mm GaN on SiC HEMT which operates from DC-18 GHz. The TGF2023-05 is designed using TriQuint's proven 0.25um GaN production process. This process features advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions. The TGF2023-05 typically provides > 44 dBm of saturated output power with power gain of 15 dB. The maximum power added efficiency is 55% which makes the TGF2023-05 appropriate for high efficiency applications. Lead-free and RoHS compliant . Datasheet subject to change without notice. TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Dec 2008 (c) Rev A 1 Table I Absolute Maximum Ratings 1/ Symbol Vd Vg Id Ig Pin 1/ Drain Voltage Gate Voltage Range Drain Current Gate Current Input Continuous Wave Power TGF2023-05 Notes 2/ Parameter Value 40 V -10 to 0 V 5A 28 mA 32 dBm 2/ 2/ These ratings represent the maximum operable values for this device. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device and / or affect device lifetime. These are stress ratings only, and functional operation of the device at these conditions is not implied. Combinations of supply voltage, supply current, input power, and output power shall not exceed the maximum power dissipation listed in Table IV. 2/ Table II Recommended Operating Conditions Symbol Vd Idq Id_Drive Vg Drain Voltage Drain Current Drain Current under RF Drive Gate Voltage Parameter Value 28 - 40 V 500 mA 1500 mA -3 V 2 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Dec 2008 (c) Rev A TGF2023-05 Table III RF Characterization Table 1/ Bias: Vd = 32 V & 40 V, Idq = 500 mA, Vg = -3 V Typical SYMBOL Power Tuned: Psat PAE Gain Rp 2/ Cp 2/ L 3/ Efficiency Tuned: Psat PAE Gain Rp 2/ Cp 2/ L 3/ 1/ 2/ 3/ Saturated Output Power Power Added Efficiency Power Gain Parallel Resistance Parallel Capacitance Load Reflection Coefficient 42 55 19.5 190.2 0.263 0.543 133.9 41.5 57 19.5 158.1 0.314 0.587 142.4 dBm % dB *mm pF/mm Saturated Output Power Power Added Efficiency Power Gain Parallel Resistance Parallel Capacitance Load Reflection Coefficient 44.5 46 15 87.79 0.444 0.674 160.9 43.5 47 15 68.58 0.461 0.692 164.8 dBm % dB *mm pF/mm - PARAMETER Vd = 40 V Vd = 32 V UNITS Values in this table are scaled from a 1.25 mm unit GaN on SiC cell at 3.5 GHz Large signal equivalent GaN on SiC output network Optimum load impedance for maximum power or maximum PAE at 3.5 GHz. The series resistance and inductance (Rd and Ld) shown in the Figure on page 5 is excluded 3 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Dec 2008 (c) Rev A TGF2023-05 Table IV Power Dissipation and Thermal Properties 1/ Parameter Maximum Power Dissipation Test Conditions Tbaseplate = 70 C Value Pd = 20 W Tchannel = 150 C Tm = 2.0E+6 Hrs jc = 4.0 (C/W) Tchannel = 150 C Tm = 2.0E+6 Hrs Notes 2/ 3/ Thermal Resistance, jc Vd = 40 V Id = 500 mA Pd = 20 W Tbaseplate = 70 C Vd = 40 V Id = 1500 mA Pout = 44.5 dBm Pd = 31.8 W Tbaseplate = 23 C 30 Seconds Thermal Resistance, jc Under RF Drive jc = 4.0 (C/W) Tchannel = 150 C Tm = 2.0E+6 Hrs 4/ Mounting Temperature Storage Temperature 1/ 2/ 320 C -65 to 150 C Assumes eutectic attach using 1mil thick 80/20 AuSn mounted to a 10mil CuMo Carrier Plate For a median life of 2E+6 hours, Power Dissipation is limited to Pd(max) = (150 C - Tbase C)/jc. 3/ Channel operating temperature will directly affect the device median time to failure (MTTF). For maximum life, it is recommended that channel temperatures be maintained at the lowest possible levels. Channel temperatures at high drain voltages can be excessive, leading to reduced MTTF. Operation at reduced baseplate temperatures and/or pulsed RF modulation is recommended. 4/ Power De-rating Curve 48 44 40 36 32 28 24 20 16 12 8 4 0 -60 -40 -20 0 Power Dissipated (W) Tm= 2.0E+6 Hrs 20 40 60 80 100 120 140 160 Baseplate Temp (C) 4 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Dec 2008 (c) Rev A TGF2023-05 Linear Model for 1.25 mm Unit GaN Cell MODEL PARAMETER Rg Rs Rd gm Cgs Ri Cds Rds Cgd Tau Ls Lg Ld Rgs Rgd Vd = 40V Idq = 19mA 0.56 0.08 0.31 0.134 1.52 0.24 0.239 373.7 0.053 4.11 0.0148 -0.0135 0.048 1550 70500 Vd = 32V Idq = 19mA 0.56 0.07 0.33 0.138 1.50 0.23 0.263 319.2 0.0646 3.57 0.0147 -0.013 0.0485 1950 47800 UNITS S pF pF pF pS nH nH nH 5 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Dec 2008 (c) Rev A TGF2023-05 Mechanical Drawing Units: millimeters Thickness: 0.100 Die x,y size tolerance: +/- 0.050 Chip edge to bond pad dimensions are shown to center of pad Ground is backside of die Bond Pad #1, #2, #3, #4 Bond Pad #5 Vg Vd 0.154 x 0.115 0.154 x 1.010 GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 6 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Dec 2008 (c) Rev A TGF2023-05 Assembly Notes Component placement and adhesive attachment assembly notes: * Vacuum pencils and/or vacuum collets are the preferred method of pick up. * Air bridges must be avoided during placement. * The force impact is critical during auto placement. * Organic attachment (i.e. epoxy) can be used in low-power applications. * Curing should be done in a convection oven; proper exhaust is a safety concern. Reflow process assembly notes: * Use AuSn (80/20) solder and limit exposure to temperatures above 300C to 3-4 minutes, maximum. * An alloy station or conveyor furnace with reducing atmosphere should be used. * Do not use any kind of flux. * Coefficient of thermal expansion matching is critical for long-term reliability. * Devices must be stored in a dry nitrogen atmosphere. Interconnect process assembly notes: * Ball bonding is the preferred interconnect technique, except where noted on the assembly diagram. * Force, time, and ultrasonics are critical bonding parameters. * Aluminum wire should not be used. * Devices with small pad sizes should be bonded with 0.0007-inch wire. Ordering Information Part TGF2023-05 Package Style GaN on SiC Die GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 7 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Dec 2008 (c) Rev A |
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