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| CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT Dual N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. CHM3258JPT CURRENT 7 Ampere FEATURE * Small flat package. (SO-8 ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. * High saturation current capability. 1 SO-8 4.06 (0.160) 3.70 (0.146) 8 CONSTRUCTION * N-Channel Enhancement 5.00 (0.197) 4.69 (0.185) 4 5 .51 (0.020) .10 (0.012) 1.27 (0.05)BSC 1.75 (0.069) 1.35 (0.053) .25 (0.010) .05 (0.002) .25 (0.010) .17 (0.007) 6.20 (0.244) 5.80 (0.228) CIRCUIT 8 D1 D1 D2 D2 5 1 4 S1 G1 S2 G2 Dimensions in millimeters SO-8 Absolute Maximum Ratings Symbol Parameter TA = 25C unless otherwise noted CHM3258JPT Units VDSS VGSS Drain-Source Voltage Gate-Source Voltage Maximum Drain Current - Continuous 30 V V 20 7 ID - Pulsed PD TJ TSTG Maximum Power Dissipation Operating Temperature Range Storage Temperature Range (Note 3) A 28 2000 -55 to 150 -55 to 150 mW C C Note : 1. Surface Mounted on FR4 Board , t <=10sec 2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2% 3. Repetitive Rating , Pulse width linited by maximum junction temperature 4. Guaranteed by design , not subject to production trsting Thermal characteristics RJA Thermal Resistance, Junction-to-Ambient (Note 1) 62.5 C/W 2007-11 RATING CHARACTERISTIC CURVES ( CHM3258JPT ) Electrical Characteristics T Symbol Parameter A = 25C unless otherwise noted Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS I GSSF I GSSR Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Body Leakage VGS = 0 V, ID = 250 A VDS = 30 V, VGS = 0 V VGS = 20V,VDS = 0 V VGS = -20V, VDS = 0 V 30 1 +100 -100 V A nA nA ON CHARACTERISTICS (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 A VGS=10V, ID=7A 1 22 30 3 28 V RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=3.5A 40 m Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 15V, VGS = 0V, f = 1.0 MHz 610 145 95 pF SWITCHING CHARACTERISTICS (Note 4) Qg Qgs Q tr toff tf gd Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Time Rise Time Turn-Off Time Fall Time VDS=15V, ID=6A VGS=10V V DD= 15V , I D = 5.5A VGS = 10 V RGEN= 3 12.3 1.5 2.5 9 3 24 4 16 nC ton 20 8 50 10 nS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS VSD Drain-Source Diode Forward Current (Note 1) (Note 2) 2.3 1.2 A V Drain-Source Diode Forward Voltage IS = 2.3A , VGS = 0 V RATING CHARACTERISTIC CURVES ( CHM3258JPT ) Typical Electrical Characteristics Figure 1. Output Characteristics 40 40 Figure 2. Transfer Characteristics V G S =1 0 , 9 , 8 , 7 , 6 V I D , DRAIN CURRENT (A) 30 VG S =5 . 0 V I D , DRAIN CURRENT (A) 30 20 20 VG S =4 . 0 V 10 10 J=125C T 0 VG S =3 . 0 V 0 0 1.0 2.0 3.0 4.0 V DS , DRAIN-TO-SOURCE VOLTAGE (V) 5.0 0 1.0 TJ=-55C TJ=25C 3.0 4.0 5.0 6.0 2.0 VGS , GATE-TO-SOURCE VOLTAGE (V) Figure 3. Gate Charge 10 VDS=15V ID=6A 2.2 Figure 4. On-Resistance Variation with Temperature VGS=10V ID=7A 1.9 VGS , GATE TO SOURCE VOLTAGE (V) 8 DRAIN-SOURCE ON-RESISTANCE R DS(on) , NO RMALIZED 1.6 6 1.3 4 1.0 2 0.7 0 0 3 6 9 Qg , TOTAL GATE CHARGE (nC) 12 15 0.4 -100 -50 0 50 100 TJ , JUNCTION T EMPERATURE (C) 150 200 Figure 5. Gate Threshold Variation with Temperature 1.3 1.2 VDS=VGS ID=250uA Vth , NORMALIZED GATE-SOURCE THRESHOLD VOLTAGE 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 TJ , JUNCTION T EMPERATURE (C) 125 150 |
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