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| Datasheet File OCR Text: |
| NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H2222A APPLICATIONS General Purpose Transistors. ABSOLUTE MAXIMUM RATINGS a=25ae(c) T TO-92 T stg Storage Temperature----------55~150ae T j Junction Temperature------------150ae PCCollector Dissipation------------625mW VCBO Collector- Base Voltage-----------75V VCEO Collector-Emitter Voltage----------40V VE B O Emitter -Base Voltage-----------6V I C Collector Current -------------600mA 1D Emitter E 2D Base B 3D Collector C ELECTRICAL CHARACTERISTICS a=25ae(c) T Characteristics Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Min 75 40 6 Typ Max Unit V V V Test Conditions Symbol BVCBO BVCEO BVEBO HFE VCE(sat) ICBO IEBO fT Cob IC=10|I A, IE=0 IC=10mA, IB=0 IE=10|I IC=0 A VCE=10V, IC=150mA IC=150mA, IB=15mA VCB=60V, IE=0 VEB=3V, IC=0 VCB=10V, IE=0 f=1MHz DC Current Gain Collector- Emitter Saturation Voltage Collector Cut-off Current 100 400 0. 3 10 V nA Emitter Cut-off Current Current Gain-Bandwidth Product 300 10 8 nA pF MHz VCE =20V, IC=20mA Output Capacitance |
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