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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1110 DESCRIPTION *With TO-3PFa package *Complement to type 2SB849 *Wide area of safe operation APPLICATIONS *For use in low frequency power amplifier applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION ABSOLUTE MAXIMUM RATINGS (TC=25 ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 120 120 7 7 80 150 -55~150 UNIT V V V A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=10mA ;IB=0 IC=5A ;IB=0.5A IC=5A ;IB=0.5A VCB=120V; IE=0 VEB=6V; IC=0 IC=20mA ; VCE=5V IC=1A ; VCE=5V IE=0 ; VCB=10V;f=1MHz IC=0.2A ; VCE=5V 20 40 MIN 120 2SD1110 SYMBOL V(BR)CEO VCE(sat) VBE(sat) ICBO IEBO hFE-1 hFE -2 COB fT TYP. MAX UNIT V 2.0 2.0 50 50 V V A A 200 190 15 pF MHz 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1110 Fig.2 Outline dimensions (unindicated tolerance:0.30mm) 3 |
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